Study Of Silicon Nanowire Field Effect Transistor For Analog And Digital Biosensing
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Study Of Silicon Nanowire Field Effect Transistor For Analog And Digital Biosensing
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Author : Pengyuan Zang
language : en
Publisher:
Release Date : 2017
Study Of Silicon Nanowire Field Effect Transistor For Analog And Digital Biosensing written by Pengyuan Zang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Biosensors categories.
The advancement of semiconductor technology has popularized the low power, economical and small form-factor solid state devices, such as those highly integrated and interconnected as the fundamental infrastructure for the internet of things (IoT). Due to its CMOS-compatibility and electrical interface, the biosensor utilizing field effect transistor (FET) as transducer has become the perfect candidate to interface directly with the chemical and biological properties of the physical world. Especially, nanowire (NW) FET biosensor has received great attention as a highly sensitive biosensing platform, benefiting from its increased surface-to-volume ratio. In this work, several challenges and key aspects of existing NW FET biosensor were studied, and solutions were proposed to address these problems. For example, the hydrolytic stability of the surface sensing element was evaluated and improved by a hydrolysis process, which led to a significant increase in the overall biosensor performance. Another challenge is the noise in the electric potential of the sensing solutions. A secondary reference electrode was introduced in the biosensing system, and its potential was used to subtract the noise from the measured sensor output. Compared to a reference FET, this approach greatly reduced the system complexity and requirement, yet still improved the limit of detection (LOD) by 50 – 70%. This work also involved careful investigation into the analyte sensitivity, which can be considerably affected by the charge buffering effect from the surface hydroxyl groups. Analytical studies and numerical simulations were carried out, revealing that both low pH sensitivity and large analyte buffer capacity are required to achieve a reasonable analyte sensitivity. The most significant portion of this work was the experimental demonstration of the digital biosensing concept with single serpentine NW FET biosensor. The majority of existing FET biosensors utilized the device as an analog transducer, which measures the captured analyte density to generate an output, and suffers from various noise factors, especially the nonspecific changes of the sensing solutions than cannot be reduced by averaging. Digital biosensor no longer depends on the amplitude of the sensor output and is therefore better immune from these noise factors. Instead, the individual binding event of single analyte is counted and analyzed statistically to determine the analyte concentration. The single serpentine NW FET is the ideal device design to achieve digital biosensing. It maintains the low noise level with the equivalently long channel, yet achieves a small footprint enough for binding of only a single analyte. The binding of analyte to multiple segments of the NW results in both higher sensitivity and binding avidity. The small footprint also enables high integration density of the individual digital biosensors into an array format, which is a responsive, highly sensitive, and cost-effective future biosensing platform.
Lithographically Defined Silicon Nanowire Field Effect Transistors For Label Free Biosensing
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Author : Fern Yuen Yoon
language : en
Publisher:
Release Date : 2008
Lithographically Defined Silicon Nanowire Field Effect Transistors For Label Free Biosensing written by Fern Yuen Yoon and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Biosensors categories.
Nanowire Field Effect Transistors Principles And Applications
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Author : Dae Mann Kim
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-23
Nanowire Field Effect Transistors Principles And Applications written by Dae Mann Kim and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-23 with Technology & Engineering categories.
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications
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Author : Thomas Shan Yau Moh
language : en
Publisher:
Release Date : 2013
Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications written by Thomas Shan Yau Moh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Nanowire Field Effect Transistors Principles And Applications
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Author : Dae Mann Kim
language : en
Publisher: Springer
Release Date : 2016-08-23
Nanowire Field Effect Transistors Principles And Applications written by Dae Mann Kim and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-08-23 with Technology & Engineering categories.
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Biosensing With Silicon
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Author : Enakshi Bhattacharya
language : en
Publisher: Springer Nature
Release Date : 2022-01-01
Biosensing With Silicon written by Enakshi Bhattacharya and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-01 with Technology & Engineering categories.
This book discusses two silicon biosensors: an electrochemical sensor – the Electrolyte Insulator Silicon Capacitor (EISCAP), and a mechanical resonant cantilever sensor. The author presents the principle and the technology behind the device fabrication and miniaturization, stable and reproducible functionalization protocols for bioreceptor immobilization, and the measurement and the data analysis for extracting the best performance from these sensors. EISCAP sensors, used for the estimation of triglycerides and urea, have been improved through the use of micromachining processes. The miniaturization brought out advantages as well as challenges which are discussed in this book, resulting in a prototype mini-EISCAP with a readout circuit for fast and accurate estimation of triglycerides. The author also reports on the sensitivity improvements in the estimation of triglycerides and urea obtained with the polycrystalline silicon cantilever and its measurements in liquid media. The book is ideal for materials scientists and engineers working in the field of biosensors and MicroElectroMechanical systems (MEMS) and their optimizations, as well as researchers with biochemical or biomedical expertise, in order to have a fresh and updated review on the last progresses reached with EISCAPs and cantilever sensors.
Nanoelectronics For Next Generation Integrated Circuits
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Author : Rohit Dhiman
language : en
Publisher: CRC Press
Release Date : 2022-11-23
Nanoelectronics For Next Generation Integrated Circuits written by Rohit Dhiman and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-23 with Technology & Engineering categories.
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Fabrication And Characterization Of High Performance Silicon Nanowire Field Effect Transistors
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Author : Muhammad Maksudur Rahman
language : en
Publisher:
Release Date : 2011
Fabrication And Characterization Of High Performance Silicon Nanowire Field Effect Transistors written by Muhammad Maksudur Rahman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Field-effect transistors categories.
Quasi one-dimensional (1-D) field-effect transistors (FET), such as Si nanowire FETs (Si NW-FETs), have shown promise for more aggressive channel length scaling, better electrostatic gate control, higher integration densities and low-power applications. At the same time, an accurate bench-marking of their performance remains a challenging task due to difficulties in definition of the exact channel length, gate capacitance and transconductance. In 1-D Si FETs, one also often observes a significant degradation of their mobility and on/off ratio. The goal of this study is to implement the idea of the FET performance enhancement while simultaneously performing a more rigorous data extraction. To achieve these goals, we fabricated dual-gate undoped Si NW-FETs with various NW diameters The Si NWs are grown by Au-catalyzed vapor-transport For our top-gate NW-FET, the subthreshold swing was determined to be 85-90 mV/decade, whereas the best subthreshold swings for Si NW-FETs until now were ~135-140 mV/decade. We achieved a ON/OFF current ratio of 10 7 due to improved electrostatic control and electron transport conditions inside the channel. This is on the higher end of any ON/OFF ratios thus far reported for NW FETs The hole mobility in our NW-FETs was around 250.400 cm[superscript 2] /Vs, according to different extraction procedures. In our mobility calculations we included the NW silicidation effect, which reduces the effective channel length. We calculated the top gate capacitance using Technology Computer Aided Design (TCAD) Sentaurus simulator, which gives more accurate value of capacitance of the NW over any analytical formulas. Thus we fabricate and rigorously study Si NW.s intrinsic properties which are very important for digital logic circuit application. In the second part of the study, we carried out simulation of Si NW FET devices to shed light on the carrier transport behavior that also explains experimental data.
Proceedings Of The 2nd International Conference On Electronic Engineering And Renewable Energy Systems
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Author : Bekkay Hajji
language : en
Publisher: Springer Nature
Release Date : 2020-08-14
Proceedings Of The 2nd International Conference On Electronic Engineering And Renewable Energy Systems written by Bekkay Hajji and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-14 with Technology & Engineering categories.
This book includes papers presented at the Second International Conference on Electronic Engineering and Renewable Energy (ICEERE 2020), which focus on the application of artificial intelligence techniques, emerging technology and the Internet of things in electrical and renewable energy systems, including hybrid systems, micro-grids, networking, smart health applications, smart grid, mechatronics and electric vehicles. It particularly focuses on new renewable energy technologies for agricultural and rural areas to promote the development of the Euro-Mediterranean region. Given its scope, the book is of interest to graduate students, researchers and practicing engineers working in the fields of electronic engineering and renewable energy.
Quantum Confinement Effects In Lithographic Sub 5 Nm Silicon Nanowire Fets And Integration Of Si Nanograting Fet Biosensors
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Author : Krutarth B. Trivedi
language : en
Publisher:
Release Date : 2012
Quantum Confinement Effects In Lithographic Sub 5 Nm Silicon Nanowire Fets And Integration Of Si Nanograting Fet Biosensors written by Krutarth B. Trivedi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Biosensors categories.
In recent years, widespread accessibility to reliable nanofabrication techniques such as high resolution electron beam lithography as well as development of innovative techniques such as nanoimprint lithography and chemically grown nano-materials like carbon nanotubes and graphene have spurred a boom in many fields of research involving nanoscale features and devices. The breadth of fields in which nanoscale features represent a new paradigm is staggering. Scaling down device dimensions to nanoscale enables non-classical quantum behavior and allows for interaction with similarly sized natural materials, like proteins and DNA, as never before, affording an unprecedented level of performance and control and fostering a seemingly boundless array of unique applications. Much of the research effort has been directed toward understanding such interactions to leverage the potential of nanoscale devices to enhance electronic and medical technology. In keeping with the spirit of application based research, my graduate research career has spanned the development of nanoimprint techniques and devices for novel applications, demonstration and study of sub-5 nm Si nanowire FETs exhibiting tangible performance enhancement over conventional MOSFETs, and development of an integrated Si nanograting FET based biosensor and related framework. The following dissertation details my work in fabrication of sub-5 nm Si nanowire FETs and characterization of quantum confinement effects in charge transport of FETs with 2D and 1D channel geometry, fabrication and characterization of schottky contact Si nanograting FET sensors, integration of miniaturized Si nanograting FET biosensors into Chip-in-Strip© packaging, development of an automated microfluidic sensing system, and investigation of electrochemical considerations in the Si nanograting FET biosensor gate stack followed by development of a novel patent-pending strategy for a lithographically patterned on-chip gate electrode.