Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications
DOWNLOAD
Download Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications
DOWNLOAD
Author : Thomas Shan Yau Moh
language : en
Publisher:
Release Date : 2013
Ic Compatible Wafer Level Fabrication Of Silicon Nanowire Field Effect Transistors For Biosensing Applications written by Thomas Shan Yau Moh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Study Of Silicon Nanowire Field Effect Transistor For Analog And Digital Biosensing
DOWNLOAD
Author : Pengyuan Zang
language : en
Publisher:
Release Date : 2017
Study Of Silicon Nanowire Field Effect Transistor For Analog And Digital Biosensing written by Pengyuan Zang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Biosensors categories.
The advancement of semiconductor technology has popularized the low power, economical and small form-factor solid state devices, such as those highly integrated and interconnected as the fundamental infrastructure for the internet of things (IoT). Due to its CMOS-compatibility and electrical interface, the biosensor utilizing field effect transistor (FET) as transducer has become the perfect candidate to interface directly with the chemical and biological properties of the physical world. Especially, nanowire (NW) FET biosensor has received great attention as a highly sensitive biosensing platform, benefiting from its increased surface-to-volume ratio. In this work, several challenges and key aspects of existing NW FET biosensor were studied, and solutions were proposed to address these problems. For example, the hydrolytic stability of the surface sensing element was evaluated and improved by a hydrolysis process, which led to a significant increase in the overall biosensor performance. Another challenge is the noise in the electric potential of the sensing solutions. A secondary reference electrode was introduced in the biosensing system, and its potential was used to subtract the noise from the measured sensor output. Compared to a reference FET, this approach greatly reduced the system complexity and requirement, yet still improved the limit of detection (LOD) by 50 – 70%. This work also involved careful investigation into the analyte sensitivity, which can be considerably affected by the charge buffering effect from the surface hydroxyl groups. Analytical studies and numerical simulations were carried out, revealing that both low pH sensitivity and large analyte buffer capacity are required to achieve a reasonable analyte sensitivity. The most significant portion of this work was the experimental demonstration of the digital biosensing concept with single serpentine NW FET biosensor. The majority of existing FET biosensors utilized the device as an analog transducer, which measures the captured analyte density to generate an output, and suffers from various noise factors, especially the nonspecific changes of the sensing solutions than cannot be reduced by averaging. Digital biosensor no longer depends on the amplitude of the sensor output and is therefore better immune from these noise factors. Instead, the individual binding event of single analyte is counted and analyzed statistically to determine the analyte concentration. The single serpentine NW FET is the ideal device design to achieve digital biosensing. It maintains the low noise level with the equivalently long channel, yet achieves a small footprint enough for binding of only a single analyte. The binding of analyte to multiple segments of the NW results in both higher sensitivity and binding avidity. The small footprint also enables high integration density of the individual digital biosensors into an array format, which is a responsive, highly sensitive, and cost-effective future biosensing platform.
Silicon Nanowire Field Effect Transistor For Biosensing
DOWNLOAD
Author : Yu Chen
language : en
Publisher:
Release Date : 2009
Silicon Nanowire Field Effect Transistor For Biosensing written by Yu Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Abstract: Detection and recognition of chemical ions and biological molecules are important in basic science as well as in pharmacology and medicine. Nanotechnology has made it possible to greatly enhance detection sensitivity through the use of nanowires, nanotubes, nanocrystals, nanocantilevers, and quantum dots as sensing platforms. In this work silicon nanowires are used as the conductance channel between the source and drain of a FET (field effect transistor) device and the biomolecular binding on the surface of nanowire modifies the conductance like a change in gate voltage. Due to the high surface-to-volume ratio and unique character of the silicon nanowires, this device has significant advantages in real-time, label-free and highly sensitive detection of a wide range of species, including proteins, nucleic acids and other small molecules. Here we present a biosensor fabricated from CMOS (complementary metal-oxide-semiconductor) compatible top-down methods including electron beam lithography. This method enables scalable manufacturing of multiple sensor arrays with high efficiency. In a systematic study of the device characteristics with different wire widths, we have found the sensitivity of the device increases when wire width decreases. By operating the device in appropriate bias region, the sensitivity of the device can be improved without doping or high temperature annealing. Not only can this device be used to detect the concentration of proteins and metabolites like urea or glucose, but also dynamic information like the dissociation constant can be extracted from the measurement. The device is also used to detect the clinically related cancer antigen CA 15.3 and shows potential application in cancer studies.
Fabrication And Characterization Of High Performance Silicon Nanowire Field Effect Transistors
DOWNLOAD
Author : Muhammad Maksudur Rahman
language : en
Publisher:
Release Date : 2011
Fabrication And Characterization Of High Performance Silicon Nanowire Field Effect Transistors written by Muhammad Maksudur Rahman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Field-effect transistors categories.
Quasi one-dimensional (1-D) field-effect transistors (FET), such as Si nanowire FETs (Si NW-FETs), have shown promise for more aggressive channel length scaling, better electrostatic gate control, higher integration densities and low-power applications. At the same time, an accurate bench-marking of their performance remains a challenging task due to difficulties in definition of the exact channel length, gate capacitance and transconductance. In 1-D Si FETs, one also often observes a significant degradation of their mobility and on/off ratio. The goal of this study is to implement the idea of the FET performance enhancement while simultaneously performing a more rigorous data extraction. To achieve these goals, we fabricated dual-gate undoped Si NW-FETs with various NW diameters The Si NWs are grown by Au-catalyzed vapor-transport For our top-gate NW-FET, the subthreshold swing was determined to be 85-90 mV/decade, whereas the best subthreshold swings for Si NW-FETs until now were ~135-140 mV/decade. We achieved a ON/OFF current ratio of 10 7 due to improved electrostatic control and electron transport conditions inside the channel. This is on the higher end of any ON/OFF ratios thus far reported for NW FETs The hole mobility in our NW-FETs was around 250.400 cm[superscript 2] /Vs, according to different extraction procedures. In our mobility calculations we included the NW silicidation effect, which reduces the effective channel length. We calculated the top gate capacitance using Technology Computer Aided Design (TCAD) Sentaurus simulator, which gives more accurate value of capacitance of the NW over any analytical formulas. Thus we fabricate and rigorously study Si NW.s intrinsic properties which are very important for digital logic circuit application. In the second part of the study, we carried out simulation of Si NW FET devices to shed light on the carrier transport behavior that also explains experimental data.
Lithographically Defined Silicon Nanowire Field Effect Transistors For Label Free Biosensing
DOWNLOAD
Author : Fern Yuen Yoon
language : en
Publisher:
Release Date : 2008
Lithographically Defined Silicon Nanowire Field Effect Transistors For Label Free Biosensing written by Fern Yuen Yoon and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Biosensors categories.
Nanowire Field Effect Transistors Principles And Applications
DOWNLOAD
Author : Dae Mann Kim
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-23
Nanowire Field Effect Transistors Principles And Applications written by Dae Mann Kim and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-23 with Technology & Engineering categories.
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Biosensors Recent Advances And Future Challenges
DOWNLOAD
Author : Paolo Bollella
language : en
Publisher: MDPI
Release Date : 2021-01-27
Biosensors Recent Advances And Future Challenges written by Paolo Bollella and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-27 with Science categories.
The present book is devoted to all aspects of biosensing in a very broad definition, including, but not limited to, biomolecular composition used in biosensors (e.g., biocatalytic enzymes, DNAzymes, abiotic nanospecies with biocatalytic features, bioreceptors, DNA/RNA, aptasensors, etc.), physical signal transduction mechanisms (e.g., electrochemical, optical, magnetic, etc.), engineering of different biosensing platforms, operation of biosensors in vitro and in vivo (implantable or wearable devices), self-powered biosensors, etc. The biosensors can be represented with analogue devices measuring concentrations of analytes and binary devices operating in the YES/NO format, possibly with logical processing of input signals. Furthermore, the book is aimed at attracting young scientists and introducing them to the field, while providing newcomers with an enormous collection of literature references.
Nanowire Electronics
DOWNLOAD
Author : Guozhen Shen
language : en
Publisher: Springer
Release Date : 2018-11-23
Nanowire Electronics written by Guozhen Shen and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-11-23 with Technology & Engineering categories.
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
Junctionless Field Effect Transistors
DOWNLOAD
Author : Shubham Sahay
language : en
Publisher: John Wiley & Sons
Release Date : 2019-01-28
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-28 with Technology & Engineering categories.
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Fundamentals Of Iii V Semiconductor Mosfets
DOWNLOAD
Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.