The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2
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The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2
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Author : B.E. Deal
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-09
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2 written by B.E. Deal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-09 with Science categories.
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2
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Author : B. E. Deal
language : en
Publisher:
Release Date : 2014-09-01
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2 written by B. E. Deal and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-01 with categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000
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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 2000
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Nature categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996
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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 1996
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.
Silicon Nitride And Silicon Dioxide Thin Insulating Films
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Author : M. Jamal Deen
language : en
Publisher: The Electrochemical Society
Release Date : 1997
Silicon Nitride And Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface
DOWNLOAD
Author : B.E. Deal
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
The Physics And Chemistry Of Sio2 And The Si Sio2 Interface written by B.E. Deal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Fundamental Aspects Of Ultrathin Dielectrics On Si Based Devices
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Author : Eric Garfunkel
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Fundamental Aspects Of Ultrathin Dielectrics On Si Based Devices written by Eric Garfunkel and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Semiconductor Silicon 2002
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Author : Howard R. Huff
language : en
Publisher: The Electrochemical Society
Release Date : 2002
Semiconductor Silicon 2002 written by Howard R. Huff and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
Fundamentals Of Semiconductor Processing Technology
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Author : Badih El-Kareh
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Fundamentals Of Semiconductor Processing Technology written by Badih El-Kareh and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Silicon Nitride And Silicon Dioxide Thin Insulating Films
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Author :
language : en
Publisher:
Release Date : 1999
Silicon Nitride And Silicon Dioxide Thin Insulating Films written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Silicon dioxide categories.