Thin Film Growth Techniques For Low Dimensional Structures
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Thin Film Growth Techniques For Low Dimensional Structures
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Author : R.F.C. Farrow
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09
Thin Film Growth Techniques For Low Dimensional Structures written by R.F.C. Farrow and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Thin Film Growth Techniques For Low Dimensional Structures
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Author : R. F. C. Farrow
language : en
Publisher:
Release Date : 2014-01-15
Thin Film Growth Techniques For Low Dimensional Structures written by R. F. C. Farrow and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-01-15 with categories.
Thin Film Growth Techniques For Low Dimensional Structures
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Author : R.F.C. Farrow
language : en
Publisher: Springer
Release Date : 2012-12-28
Thin Film Growth Techniques For Low Dimensional Structures written by R.F.C. Farrow and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-28 with Technology & Engineering categories.
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Thin Film Growth Techniques For Low Dimensional Structures
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Author : R.F.C. Farrow
language : en
Publisher: Springer
Release Date : 1987-12-01
Thin Film Growth Techniques For Low Dimensional Structures written by R.F.C. Farrow and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987-12-01 with Technology & Engineering categories.
This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
Guidelines For Mastering The Properties Of Molecular Sieves
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Author : Denise Barthomeuf
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-08
Guidelines For Mastering The Properties Of Molecular Sieves written by Denise Barthomeuf and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-08 with Science categories.
Low dimensionality is a multifarious concept which applies to very diversified materials. Thus, examples of low-dimensional systems are structures with one or several layers, single lines or patterns of lines, and small clusters isolated or dispersed in solid systems. Such low dimensional features can be produced in a wide variety of materials systems with a broad spectrum of scientific and practical interests. These features, in turn, induce specific properties and, particularly, specific transport properties. In the case of zeolites, low dimensionality appears in the network of small-diameter pores of molecular size, extending in one, two or three di mensions, that these solids exhibit as a characteristic feature and which explains the term of "molecular sieves" currently used to name these ma terials. Indeed, a large number of industrial processes for separation of gases and liquids, and for catalysis are based upon the use of this low dimensional feature in zeolites. For instance, zeolites constitute the first class of catalysts employed allover the world. Because of the peculiarity and flexibility of their structure (and composition), zeolites can be adapted to suit many specific and diversified applications. For this reason, zeolites are presently the object of a large and fast-growing interest among chemists and chemical engineers.
Light Scattering In Semiconductor Structures And Superlattices
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Author : D.J. Lockwood
language : en
Publisher: Springer
Release Date : 2013-12-20
Light Scattering In Semiconductor Structures And Superlattices written by D.J. Lockwood and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-12-20 with Science categories.
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
Condensed Matter Studies By Nuclear Methods Proceedings Of The Xxvi Zakopane School On Physics
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Author : Jan Stanek
language : en
Publisher: World Scientific
Release Date : 1991-09-02
Condensed Matter Studies By Nuclear Methods Proceedings Of The Xxvi Zakopane School On Physics written by Jan Stanek and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-09-02 with categories.
This is an important textbook for undergraduate and graduate students in structural biology, chemistry, biochemistry, biology and medicine. Written by a team of leading scientists in the field, it covers all the essential aspects of proteins, nucleic acids and lipids, including the rise and fall of proteins, membranes and gradients, the structural biology of cells, and evolution — the comparative structural biology. The focus is on interesting and relevant molecular structures as well as central biology.This comprehensive volume is richly illustrated with more than 200 color figures. So far, there has been a lack of comprehensive textbooks on structural biology that are up to date; this book is written to fill the gap. An accompanying CD contains high-resolution images that can be projected in a classroom.
X Ray Scattering From Semiconductors 2nd Edition
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Author : Paul F Fewster
language : en
Publisher: World Scientific
Release Date : 2003-07-07
X Ray Scattering From Semiconductors 2nd Edition written by Paul F Fewster and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-07-07 with Technology & Engineering categories.
This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.
Metal Ceramic Interfaces
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Author : M. Rühle
language : en
Publisher: Elsevier
Release Date : 2013-10-22
Metal Ceramic Interfaces written by M. Rühle and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-22 with Technology & Engineering categories.
As engineering materials and structures often contain a metal or metallic alloy bonded to a ceramic, the resultant interface must be able to sustain mechanical forces without failure. They also play an important role in oxidation or reduction of materials. The workshop on 'Bonding, Structure and Mechanical Properties of Metal/Ceramic Interfaces' was held in January 1989 within the Acta/Scripta Metallurgica conference series. It drew together an international collection of 70 scientists who discussed a wide range of issues related to metal-ceramic interfaces. The sessions were divided into 7 categories: structure and bonding, chemistry at interfaces, formation of interfaces, structure of interfaces, thermodynamics/atomistics of interface fracture, mechanics of interface cracks, and fracture resistance of bimaterial interfaces. Within these headings attention was paid to grain boundaries, the influence of chemical processes on the behaviour of interfaces, diffusion bonding, characterization of fracture, and crack propagation by fatigue and by stress corrosion. The book presents a useful reference source for materials scientists, physicists, chemists, and mechanical engineers who are concerned with the roles and properties of interfaces.
Microscopy Of Semiconducting Materials 1987 Proceedings Of The Institute Of Physics Conference Oxford University April 1987
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Author : A.G. Cullis
language : en
Publisher: CRC Press
Release Date : 2021-01-31
Microscopy Of Semiconducting Materials 1987 Proceedings Of The Institute Of Physics Conference Oxford University April 1987 written by A.G. Cullis and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-31 with Science categories.
The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.