Transport Properties Of Wide Band Gap Semiconductors
DOWNLOAD
Download Transport Properties Of Wide Band Gap Semiconductors PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Transport Properties Of Wide Band Gap Semiconductors book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Transport Properties Of Wide Band Gap Semiconductors
DOWNLOAD
Author : Louis Tirino
language : en
Publisher:
Release Date : 2004
Transport Properties Of Wide Band Gap Semiconductors written by Louis Tirino and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Breakdown (Electricity) categories.
Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared. Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.
Influence Of Electron Trapping On Minority Carrier Transport Properties Of Wide Band Gap Semiconductors
DOWNLOAD
Author : Olena Lopatiuk Tirpak
language : en
Publisher:
Release Date : 2007
Influence Of Electron Trapping On Minority Carrier Transport Properties Of Wide Band Gap Semiconductors written by Olena Lopatiuk Tirpak and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Minority carrier transport properties and the effects of electron irradiation/injection were studied in GaN and ZnO containing dopants known to form acceptor states deep within the materials’ bandgap. Minority carrier diffusion length and lifetime changes were investigated using Electron Beam Induced Current (EBIC) method, cathodoluminescence spectroscopy, spectral photoresponse and persistent photoconductivity measurements. It is shown that electron irradiation by the beam of a scanning electron microscope results in a significant increase of minority carrier diffusion length. These findings are supported by the cathodoluminescence measurements that demonstrate the decay of near-band-edge intensity as a consequence of increasing carrier lifetime under continuous irradiation by the electron beam. Temperature-dependent measurements were used to determine the activation energies for the electron irradiation-induced effects. The latter energies were found to be consistent with the involvement of deep acceptor states. Based on these findings, the effects of electron irradiation are explained via the mechanism involving carrier trapping on these levels. Solid-state electron injection was also shown to result in a similar increase of minority carrier lifetime and diffusion length. Solid-state injection was carried out by applying the forward bias to a ZnO homojunction and resulted in a significant improvement of the peak photoresponse of the junction. This improvement was unambiguously correlated with the increase of the minority carrier diffusion length due to electron injection.
Wide Band Gap Semiconductors And Insulators
DOWNLOAD
Author : Peter A. Hersh
language : en
Publisher:
Release Date : 2008
Wide Band Gap Semiconductors And Insulators written by Peter A. Hersh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Photovoltaic cells categories.
The work presented here is focused on applying basic principles of solid-state chemistry to the study and development of new wide band-gap semiconductors and insulators for photovoltaic and electronic-device applications. Analysis of crystal structure, band structure, optical band gap, morphology and transport properties provides fundamental insight into materials performance as well as determining potential applications. Efforts on the study and development of wide band-gap semiconductors with emphasis on absorber layers and window layers for multijunction solar cells are presented in chapters 2-6. A new process for solution-deposited and composition control of insulating oxide films is presented in chapters 7 and 8.
Nitride Wide Bandgap Semiconductor Material And Electronic Devices
DOWNLOAD
Author : Yue Hao
language : en
Publisher: CRC Press
Release Date : 2016-11-03
Nitride Wide Bandgap Semiconductor Material And Electronic Devices written by Yue Hao and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-03 with Computers categories.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Radiation Effects On Wide Band Gap Semiconductor Transport Properties
DOWNLOAD
Author : Casey Minna Schwarz
language : en
Publisher:
Release Date : 2012
Radiation Effects On Wide Band Gap Semiconductor Transport Properties written by Casey Minna Schwarz and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
In this research, the transport properties of ZnO were studied through the use of electron and neutron beam irradiation. Acceptor states are known to form deep in the bandgap of doped ZnO material. By subjecting doped ZnO materials to electron and neutron beams we are able to probe, identify and modify transport characteristics relating to these deep accepter states. The impact of irradiation and temperature on minority carrier diffusion length and lifetime were monitored through the use of the Electron Beam Induced Current (EBIC) method and Cathodoluminescence (CL) spectroscopy. The minority carrier diffusion length, L, was shown to increase as it was subjected to increasing temperature as well as continuous electron irradiation. The near-band-edge (NBE) intensity in CL measurements was found to decay as a function of temperature and electron irradiation due to an increase in carrier lifetime. Electron injection through application of a forward bias also resulted in a similar increase of minority carrier diffusion length. Thermal and electron irradiation dependences were used to determine activation energies for the irradiation induced effects. This helps to further our understanding of the electron injection mechanism as well as to identify possible defects responsible for the observed effects. Thermal activation energies likely represent carrier delocalization energy and are related to the increase of diffusion length due to the reduction in recombination efficiency. The effect of electron irradiation on the minority carrier diffusion length and lifetime can be attributed to the trapping of non-equilibrium electrons on neutral acceptor levels. The effect of neutron irradiation on CL intensity can be attributed to an increase in shallow donor concentration. Thermal activation energies resulting from an increase in L or decay of CL intensity monitored through EBIC and CL measurements for p-type Sb doped ZnO were found to be the range of E[subscript a] = 112 to 145 meV. P-type Sb doped ZnO nanowires under the influence of temperature and electron injection either through continuous beam impacting or through forward bias, displayed an increase in L and corresponding decay of CL intensity when observed by EBIC or CL measurements. These measurements led to activation energies for the effect ranging from E[subscript a] = 217 to 233 meV. These values indicate the possible involvement of a Sb[subscript Zn-]2V[subscript Zn] acceptor complex. For N-type unintentionally doped ZnO, CL measurements under the influence of temperature and electron irradiation by continuous beam impacting led to a decrease in CL intensity which resulted in an electron irradiation activation energy of approximately E[subscript a] = 259 meV. This value came close to the defect energy level of the zinc interstitial. CL measurements of neutron irradiated ZnO nanostructures revealed that intensity is redistributed in favor of the NBE transition indicating an increase of shallow donor concentration. With annealing contributing to the improvement of crystallinity, a decrease can be seen in the CL intensity due to the increase in majority carrier lifetime. Low energy emission seen from CL spectra can be due to oxygen vacancies and as an indicator of radiation defects.
Wide Bandgap Semiconductor Electronics And Devices
DOWNLOAD
Author : Uttam Singisetti
language : en
Publisher: World Scientific
Release Date : 2019-12-10
Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-10 with Technology & Engineering categories.
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Processing Of Wide Band Gap Semiconductors
DOWNLOAD
Author : Stephen J. Pearton
language : en
Publisher: Elsevier
Release Date : 2000-06-01
Processing Of Wide Band Gap Semiconductors written by Stephen J. Pearton and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-06-01 with Technology & Engineering categories.
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Transport Properties Of Excess Charge Carriers In A Semiconductor With Nonuniform Bandgap
DOWNLOAD
Author : William Henry Keller
language : en
Publisher:
Release Date : 1967
Transport Properties Of Excess Charge Carriers In A Semiconductor With Nonuniform Bandgap written by William Henry Keller and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Electric circuits categories.
Carrier Transport Properties Measurements In Wide Bandgap Materials
DOWNLOAD
Author : André Dominic Anthony Peter Cropper
language : en
Publisher:
Release Date : 1995
Carrier Transport Properties Measurements In Wide Bandgap Materials written by André Dominic Anthony Peter Cropper and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with categories.
Some Electron Transport Properties Of Two Wide Bandgap Semiconductors Gallium Phosphide And Indium Gallium Phosphide
DOWNLOAD
Author : Ralph Herbert Johnson
language : en
Publisher:
Release Date : 1985
Some Electron Transport Properties Of Two Wide Bandgap Semiconductors Gallium Phosphide And Indium Gallium Phosphide written by Ralph Herbert Johnson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with Electron transport categories.