Wide Band Gap Semiconductors And Insulators
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Wide Band Gap Semiconductors And Insulators
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Author : Peter A. Hersh
language : en
Publisher:
Release Date : 2008
Wide Band Gap Semiconductors And Insulators written by Peter A. Hersh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Photovoltaic cells categories.
The work presented here is focused on applying basic principles of solid-state chemistry to the study and development of new wide band-gap semiconductors and insulators for photovoltaic and electronic-device applications. Analysis of crystal structure, band structure, optical band gap, morphology and transport properties provides fundamental insight into materials performance as well as determining potential applications. Efforts on the study and development of wide band-gap semiconductors with emphasis on absorber layers and window layers for multijunction solar cells are presented in chapters 2-6. A new process for solution-deposited and composition control of insulating oxide films is presented in chapters 7 and 8.
Topics In Growth And Device Processing Of Iii V Semiconductors
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Author : S. J. Pearton
language : en
Publisher: World Scientific
Release Date : 1996
Topics In Growth And Device Processing Of Iii V Semiconductors written by S. J. Pearton and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Technology & Engineering categories.
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
Wide Bandgap Semiconductor Spintronics
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Author : Vladimir Litvinov
language : en
Publisher: CRC Press
Release Date : 2016-03-30
Wide Bandgap Semiconductor Spintronics written by Vladimir Litvinov and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Science categories.
This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla
Wide Band Gap Semiconductor Nanowires 1
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Author : Vincent Consonni
language : en
Publisher:
Release Date : 2014
Wide Band Gap Semiconductor Nanowires 1 written by Vincent Consonni and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with Nanowires categories.
Presenting the similarities and differences between GaN and ZnO materials, this book is devoted to the specific case of wires obtained from a given kind of semiconductors, namely the semiconducting materials with a direct and wide band gap (WBG). --
Electronic Structure Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Nature
Release Date : 2024
Electronic Structure Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024 with Condensed matter categories.
This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains intrinsic interface states of electron states that overlap the band gap of a semiconductor at the interface Includes experimental data on Schottky contacts including carrier height, ideality factor and flat-band barrier height Compares of Theoretical and Experimental Data for a range of semiconductors.
Wide Band Gap Semiconductors
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Author : Chris G. Van de Walle
language : en
Publisher:
Release Date : 1993
Wide Band Gap Semiconductors written by Chris G. Van de Walle and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993 with categories.
Processing Of Wide Band Gap Semiconductors
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Author : S. J. Pearton
language : en
Publisher: William Andrew
Release Date : 2000-12-31
Processing Of Wide Band Gap Semiconductors written by S. J. Pearton and has been published by William Andrew this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-31 with Science categories.
The first available textual reference to treat the manufacture and use of high temperature/high power family semiconductors, this book details the growth, processing and device applications for the wide gap semiconductor technology. Covers new applications in high temperature/high power electronics for power switching avionics and defense short wavelength emitters.
Wide Bandgap Semiconductor Electronics And Devices
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Author : Towhidur Razzak
language : en
Publisher: World Scientific Publishing Company
Release Date : 2019-12-03
Wide Bandgap Semiconductor Electronics And Devices written by Towhidur Razzak and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-03 with Technology & Engineering categories.
With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Processing Of Wide Band Gap Semiconductors
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Author : S. J. Pearton
language : en
Publisher: Cambridge University Press
Release Date : 2013-01-15
Processing Of Wide Band Gap Semiconductors written by S. J. Pearton and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-01-15 with Technology & Engineering categories.
Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Transport Properties Of Wide Band Gap Semiconductors
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Author : Louis Tirino
language : en
Publisher:
Release Date : 2004
Transport Properties Of Wide Band Gap Semiconductors written by Louis Tirino and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Breakdown (Electricity) categories.
Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared. Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.