Understanding Solid State Electronics Vol Ii

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Understanding Solid State Electronics Vol Ii

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Author : Don L. Cannon
language : en
Publisher:
Release Date : 1985

Understanding Solid State Electronics Vol Ii written by Don L. Cannon and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with Semiconductors categories.

Noise In Physical Systems And 1 F Fluctuations

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Author : T. Musha
language : en
Publisher: IOS Press
Release Date : 1992

Noise In Physical Systems And 1 F Fluctuations written by T. Musha and has been published by IOS Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Computers categories.

Presents and discusses fundamental aspects and key implications of noise and fluctuations in various fields of science, technology and sociology, with special emphasis in 1/f fluctuations in biology. There are contributions from leading international experts.

Solid State Physics

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Author : James Deane Patterson
language : en
Publisher: Springer Science & Business Media
Release Date : 2007

Solid State Physics written by James Deane Patterson and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.

Learning solid state physics involves a certain degree of maturity, since it involves tying together diverse concepts from many areas of physics. The objective is to understand, in a basic way, how solid materials behave. To do this one needs both a good physical and mathematical background. One definition of solid state physics is that it is the study of the physical (e.g. the electrical, dielectric, magnetic, elastic, and thermal) properties of solids in terms of basic physical laws. In one sense, solid state physics is more like chemistry than some other branches of physics because it focuses on common properties of large classes of materials. It is typical that solid state physics emphasizes how physics properties link to electronic structure. We have retained the term solid state physics, even though condensed matter physics is more commonly used. Condensed matter physics includes liquids and non-crystalline solids such as glass, which we shall not discuss in detail. Modern solid state physics came of age in the late thirties and forties, and had its most extensive expansion with the development of the transistor, integrated circuits, and microelectronics. Most of microelectronics, however, is limited to the properties of inhomogeneously doped semiconductors. Solid state physics includes many other areas of course; among the largest of these are ferromagnetic materials, and superconductors. Just a little less than half of all working physicists are in condensed matter. A course in solid state physics typically begins with three broad areas: (1) How and why atoms bind together to form solids, (2) Lattice vibrations and phonons, and (3) Electrons in solids. One would then typically apply the above to (4) Interactions especially of electrons with phonons, (5) Metals, the Fermi surface and alloys, (6) Semiconductors, (7) Magnetism, (8) Superconductivity, (9) Dielectrics and ferroelectrics, (10) Optical properties, (11) Defects, and (12) Certain other modern topics such as layered materials, quantum Hall effect, mesoscopics, nanophysics, and soft condensed matter. In this book, we will consider all of these.

Tradeoffs And Optimization In Analog Cmos Design

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Author : David Binkley
language : en
Publisher: John Wiley & Sons
Release Date : 2008-09-15

Tradeoffs And Optimization In Analog Cmos Design written by David Binkley and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-09-15 with Technology & Engineering categories.

Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

Lifetime Factors In Silicon

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Author :
language : en
Publisher: ASTM International
Release Date : 1980

Lifetime Factors In Silicon written by and has been published by ASTM International this book supported file pdf, txt, epub, kindle and other format this book has been release on 1980 with categories.

Essderc 98

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Author :
language : en
Publisher: Atlantica Séguier Frontières
Release Date : 1998

Essderc 98 written by and has been published by Atlantica Séguier Frontières this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.

Compact Models For Integrated Circuit Design

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Author : Samar K. Saha
language : en
Publisher: CRC Press
Release Date : 2018-09-03

Compact Models For Integrated Circuit Design written by Samar K. Saha and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices. Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text: Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices Includes exercise problems at the end of each chapter and extensive references at the end of the book Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

Catalog Of Copyright Entries Third Series

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Author : Library of Congress. Copyright Office
language : en
Publisher: Copyright Office, Library of Congress
Release Date : 1974

Catalog Of Copyright Entries Third Series written by Library of Congress. Copyright Office and has been published by Copyright Office, Library of Congress this book supported file pdf, txt, epub, kindle and other format this book has been release on 1974 with Copyright categories.

Esd Design And Analysis Handbook

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Author : James E. Vinson
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Esd Design And Analysis Handbook written by James E. Vinson and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

ESD Design and Analysis Handbook presents an overview of ESD as it effects electronic circuits and provides a concise introduction for students, engineers, circuit designers and failure analysts. This handbook is written in simple terms and is filled with practical advice and examples to illustrate the concepts presented. While this treatment is not exhaustive, it presents many of the most important areas of the ESD problem and suggests methods for improving them. The key topics covered include the physics of the event, failure analysis, protection, characterization, and simulation techniques. The book is intended as both an introductory text on ESD and a useful reference tool to draw on as the reader gains experience. The authors have tried to balance the level of detail in the ESD Design and Analysis Handbook against the wealth of literature published on ESD every year. To that end, each chapter has a topical list of references to facilitate further in-depth study.

Mosfet Modeling Bsim3 User S Guide

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Author : Yuhua Cheng
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-05-08

Mosfet Modeling Bsim3 User S Guide written by Yuhua Cheng and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-08 with Technology & Engineering categories.

Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.