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Vlsi Memory Chip Design


Vlsi Memory Chip Design
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Vlsi Memory Chip Design


Vlsi Memory Chip Design
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Author : Kiyoo Itoh
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Vlsi Memory Chip Design written by Kiyoo Itoh and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.


The VLSI memory era truly began when the first production of semiconduc tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd. , and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb level today). I have contributed to this progress with full involvement in memory-chip development over my career. Such rapid progress would have been impossible without many of the inventions and innovative technologies, and without the effort of many talented people. Unfortunately, few systematic books on memory-chip design have been written by experts. Tliis is a result of two factors: the difficulty of involving university professors because of rapidly changing technology requiring huge investments and development resources, and a shortage of time on the part of chip designers in industry due to severe competition in the memory-chip business. Therefore, LSI memory-chip design has been isolated from the outside, preventing a deeper understanding of the technology. This book is based on my 30-year memory-chip (particularly DRAM) design career.



Vlsi Memory Chip Design


Vlsi Memory Chip Design
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Author : Itoh
language : en
Publisher:
Release Date : 2006-06-01

Vlsi Memory Chip Design written by Itoh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-01 with categories.




Low Dielectric Constant Materials For Ic Applications


Low Dielectric Constant Materials For Ic Applications
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Author : Paul S. Ho
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Low Dielectric Constant Materials For Ic Applications written by Paul S. Ho and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for



Current Sense Amplifiers For Embedded Sram In High Performance System On A Chip Designs


Current Sense Amplifiers For Embedded Sram In High Performance System On A Chip Designs
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Author : Bernhard Wicht
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Current Sense Amplifiers For Embedded Sram In High Performance System On A Chip Designs written by Bernhard Wicht and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.


System-on-a-chip (SoC) designs result in a wide range of high-complexity, high-value semiconductor products. As the technology scales towards smaller feature sizes and chips grow larger, a speed limitation arises due to an in creased RC delay associated with interconnection wires. Innovative circuit techniques are required to achieve the speed needed for high-performance signal processing. Current sensing is considered as a promising circuit class since it is inherently faster than conventional voltage sense amplifiers. How ever, especially in SRAM, current sensing has rarely been used so far. Practi cal implementations are challenging because they require sophisticated analog circuit techniques in a digital environment. The objective of this book is to provide a systematic and comprehen sive insight into current sensing techniques. Both theoretical and practical aspects are covered. Design guidelines are derived by systematic analysis of different circuit principles. Innovative concepts like compensation of the bit line multiplexer and auto-power-down will be explained based on theory and experimental results. The material will be interesting for design engineers in industry as well as researchers who want to learn about and apply current sensing techniques. The focus is on embedded SRAM but the material presented can be adapted to single-chip SRAM and to any other current-providing memory type as well. This includes emerging memory technologies like magnetic RAM (MRAM) and Ovonic Unified Memory (OUM). Moreover, it is also applicable to array like structures such as CMOS camera chips and to circuits for signal trans mission along highly capacitive busses.



System Level Test And Validation Of Hardware Software Systems


System Level Test And Validation Of Hardware Software Systems
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Author : Matteo Sonza Reorda
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-03-30

System Level Test And Validation Of Hardware Software Systems written by Matteo Sonza Reorda and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-03-30 with Technology & Engineering categories.


New manufacturing technologies have made possible the integration of entire systems on a single chip. This new design paradigm, termed system-on-chip (SOC), together with its associated manufacturing problems, represents a real challenge for designers. SOC is also reshaping approaches to test and validation activities. These are beginning to migrate from the traditional register-transfer or gate levels of abstraction to the system level. Until now, test and validation have not been supported by system-level design tools so designers have lacked the infrastructure to exploit all the benefits stemming from the adoption of the system level of abstraction. Research efforts are already addressing this issue. This monograph provides a state-of-the-art overview of the current validation and test techniques by covering all aspects of the subject including: modeling of bugs and defects; stimulus generation for validation and test purposes (including timing errors; design for testability.



High Dielectric Constant Materials


High Dielectric Constant Materials
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Author : Howard Huff
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-11-02

High Dielectric Constant Materials written by Howard Huff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-11-02 with Technology & Engineering categories.


Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.



Nanoelectronics


Nanoelectronics
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Author : Balwinder Raj
language : en
Publisher: CRC Press
Release Date : 2025-05-15

Nanoelectronics written by Balwinder Raj and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-05-15 with Technology & Engineering categories.


This book exhibits a unique way of explaining nanomaterials and devices and analyzing their design parameters to meet the sub-nanoregime challenges for low-power chip design. Since process variability, device sizing, and power supply scaling are ongoing challenges in very large-scale integration (VLSI) circuit designs, this book highlights the conventional and novel nanomaterials, devices and circuits, leakage current mitigation techniques, and other important trade-offs along with exhaustive analysis. More focus has been placed throughout the book on various trade-offs for high-speed and low-power VLSI devices and circuits co-design. This book: • Discusses advanced nano-semiconductor devices such as FinFET, nanowires, tunnel field-effect transistors, carbon nanotube field-effect transistors, and high-electron-mobility transistors. • Presents high-performance semiconductor devices at nanoscale technology nodes for the analysis of quantum effects and their impact on circuits and systems. • Covers power dissipation and reduction techniques for high-performance devices. • Explains both silicon and non-silicon devices for various applications like digital logic and analog/radio frequency applications. • Examines the difficulties and practical design approaches for extremely low-power analog-integrated circuits. It is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electronics and communications engineering, materials science, nanoscience, and nanotechnology.



Dynamic Ram


Dynamic Ram
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Author : Muzaffer A. Siddiqi
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Dynamic Ram written by Muzaffer A. Siddiqi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Computers categories.


Because of their widespread use in mainframes, PCs, and mobile audio and video devices, DRAMs are being manufactured in ever increasing volume, both in stand-alone and in embedded form as part of a system on chip. Due to the optimum design of their components—access transistor, storage capacitor, and peripherals—DRAMs are the cheapest and densest semiconductor memory currently available. As a result, most of DRAM structure research and development focuses on the technology used for its constituent components and their interconnections. However, only a few books are available on semiconductor memories in general and fewer on DRAMs. Dynamic RAM: Technology Advancements provides a holistic view of the DRAM technology with a systematic description of the advancements in the field since the 1970s, and an analysis of future challenges. Topics Include: DRAM cells of all types, including planar, three-dimensional (3-D) trench or stacked, COB or CUB, vertical, and mechanically robust cells using advanced transistors and storage capacitors Advancements in transistor technology for the RCAT, SCAT, FinFET, BT FinFET, Saddle and advanced recess type, and storage capacitor realizations How sub 100 nm trench DRAM technologies and sub 50 nm stacked DRAM technologies and related topics may lead to new research Various types of leakages and power consumption reduction methods in active and sleep mode Various types of SAs and yield enhancement techniques employing ECC and redundancy A worthwhile addition to semiconductor memory research, academicians and researchers interested in the design and optimization of high-density and cost-efficient DRAMs may also find it useful as part of a graduate-level course.



Nanoscale Memory Repair


Nanoscale Memory Repair
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Author : Masashi Horiguchi
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-11

Nanoscale Memory Repair written by Masashi Horiguchi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-11 with Technology & Engineering categories.


Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.



Ultra Low Voltage Nano Scale Memories


Ultra Low Voltage Nano Scale Memories
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Author : Kiyoo Itoh
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-09-04

Ultra Low Voltage Nano Scale Memories written by Kiyoo Itoh and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-09-04 with Technology & Engineering categories.


Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.