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Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors


Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors
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Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors


Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors
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Author : Pearl Rochelle Berndt
language : en
Publisher:
Release Date : 2001

Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors written by Pearl Rochelle Berndt and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Complex compounds categories.




Extended Defects In Semiconductors


Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12

Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.


A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.



D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991


D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991
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Author : W. Jantsch
language : en
Publisher: CRC Press
Release Date : 1991-01-01

D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991 written by W. Jantsch and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-01-01 with Technology & Engineering categories.


Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.



Defects In Semiconductors 16


Defects In Semiconductors 16
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Author : Gordon Davies
language : en
Publisher: Trans Tech Publications
Release Date : 1992

Defects In Semiconductors 16 written by Gordon Davies and has been published by Trans Tech Publications this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Science categories.


Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .



Extended Defects In Epitaxial Ii Vi Semiconductors


Extended Defects In Epitaxial Ii Vi Semiconductors
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Author : Adam Wasenczuk
language : en
Publisher:
Release Date : 1998

Extended Defects In Epitaxial Ii Vi Semiconductors written by Adam Wasenczuk and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.




Structural Analysis Of Defects In Iii V Compound Semiconductors


Structural Analysis Of Defects In Iii V Compound Semiconductors
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Author : Xiaoyu Xu
language : en
Publisher:
Release Date : 2005

Structural Analysis Of Defects In Iii V Compound Semiconductors written by Xiaoyu Xu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.




Defects And Impurities In Silicon Materials


Defects And Impurities In Silicon Materials
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Author : Yutaka Yoshida
language : en
Publisher: Springer
Release Date : 2016-03-30

Defects And Impurities In Silicon Materials written by Yutaka Yoshida and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Technology & Engineering categories.


This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.



Study Of Defects In Technologically Important Iii V Compound Semiconductors


Study Of Defects In Technologically Important Iii V Compound Semiconductors
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Author : Sandeep Pagala
language : en
Publisher:
Release Date : 2005

Study Of Defects In Technologically Important Iii V Compound Semiconductors written by Sandeep Pagala and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Compound semiconductors categories.




Point Defects In Semiconductors And Insulators


Point Defects In Semiconductors And Insulators
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Author : Johann-Martin Spaeth
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Point Defects In Semiconductors And Insulators written by Johann-Martin Spaeth and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.


The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.



Physics Briefs


Physics Briefs
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Author :
language : en
Publisher:
Release Date : 1994

Physics Briefs written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Physics categories.