Extended Defects In Epitaxial Ii Vi Semiconductors

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Extended Defects In Epitaxial Ii Vi Semiconductors

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Author : Adam Wasenczuk
language : en
Publisher:
Release Date : 1998

Extended Defects In Epitaxial Ii Vi Semiconductors written by Adam Wasenczuk and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.

Extended Defects In Semiconductors

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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12

Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.

A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors

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Author : Pearl Rochelle Berndt
language : en
Publisher:
Release Date : 2001

Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors written by Pearl Rochelle Berndt and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Complex compounds categories.

Ii Vi Semiconductor Materials And Their Applications

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Author : MariaC. Tamargo
language : en
Publisher: Routledge
Release Date : 2018-05-04

Ii Vi Semiconductor Materials And Their Applications written by MariaC. Tamargo and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-04 with Technology & Engineering categories.

II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Emphasis is placed on the wide bandgap emitters where much progress has occurred recently.The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self-organized, low-dimensional structures.II_VI Semiconductor Materials and Their Applications is a valuable reference book for researchers in the field as well as a textbook for materials science and applied physics courses.

Selected Topics In Group Iv And Ii Vi Semiconductors

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Author : E.H.C. Parker
language : en
Publisher: Newnes
Release Date : 2012-12-02

Selected Topics In Group Iv And Ii Vi Semiconductors written by E.H.C. Parker and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.

This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Defects In Semiconductors 16

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Author : Gordon Davies
language : en
Publisher: Trans Tech Publications
Release Date : 1992

Defects In Semiconductors 16 written by Gordon Davies and has been published by Trans Tech Publications this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Science categories.

Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .

Electronic Structure Of Defects In Iii Vi And Ii Vi Semiconductors And Novel Yb Based Intermetallics

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Author : Zsolt Rák
language : en
Publisher:
Release Date : 2009

Electronic Structure Of Defects In Iii Vi And Ii Vi Semiconductors And Novel Yb Based Intermetallics written by Zsolt Rák and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Compound semiconductors categories.

Ii Vi Semiconductor Blue Green Light Emitters

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Author :
language : en
Publisher: Academic Press
Release Date : 1997-03-13

Ii Vi Semiconductor Blue Green Light Emitters written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-03-13 with Science categories.

This volume provides one of the first comprehensive reviews combining recent breakthroughs in blue/green semiconductor lasers based on II-VI materials and fundamentally important issues about the development and extension of these lasers to commercial applications. These lasers are on the cutting-edge of technology and could revolutionize areas such as optical information storage and color displays in the next few years.An important focus of this book is on the recent laboratory development of an entirely new class of diode lasers, based on a different family of semiconductor materials, which emit at much shorter wavelengths in the green and blue portion of the spectrum.These new and exciting developments in optoelectronics, which are still undergoing laboratory testing, have the potential of providing a major increase in storage capacity over current CD technology.Besides applications in high-density digital optical storage, other possible aplications for the compact blue-green lasers will be in areas ranging from flat panel displays to multicolor printing to medical diagnostics. Details practical issues of the growth of laser structures by molecular beam epitaxy by pioneers in the industry Explains how the barriers of doping and electrical contact were overcome by using wide bandgap II-VI semiconductors Documents thirty years of research

Defect Analysis In Iii V Semiconductor Thin Films Grown By Hydride Vapor Phase Epitaxy

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Author :
language : en
Publisher:
Release Date : 2014

Defect Analysis In Iii V Semiconductor Thin Films Grown By Hydride Vapor Phase Epitaxy written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.

Hydride vapor phase epitaxy (HVPE) is an epitaxial growth technique renowned for its ability to grow III-V semiconductors at high growth rates using lower cost reagents compared to metal-organic vapor phase epitaxy (MOVPE), the current industry standard. Recent interest in III-V photovoltaics has led to increased attention on HVPE. While the technique came to maturity in the 70s, much is unknown about how defects incorporate in HVPE-grown materials. Further understanding of how defects incorporate in III-V materials grown by HVPE is necessary to facilitate wider adoption of the technique. This information would inform strategies for minimizing and eliminating defects in HVPE materials, allowing for the formation of high performance devices. This investigation presents a study of multiple defects in III-V semiconductors grown by HVPE in the context of specific device applications, spanning point defects comprised of individual atoms to extended defects which propagate throughout the crystal. The incorporation of the arsenic anti-site defect, AsGa, intrinsic point defect was studied in high growth rate GaAs layers with potential photovoltaic applications. Relationships between growth conditions and incorporation of AsGa in GaAs epilayers were determined. The incorporation of AsGa depended strongly on the growth conditions employed, and a model was developed to predict the concentration of anti-site defects as a function of those growth conditions. Dislocations and anti-phase domain boundaries (APDBs), two types of extended defects, were investigated in the heteroepitaxial GaAs/Ge system. It was found that the use of 6° miscut substrates and specific growth temperatures led to elimination of APDBs. Dislocation densities were reduced through the use of high growth temperatures. The third and final application investigated was the growth of InxGa1-xAs metamorphic buffer layers (MBLs) by HVPE. The relationships between the growth conditions and the alloy composition were determined, and a model was developed to explain the observed behavior. Compositional grading strategies were explored and insight into the minimization of dislocations in these layers was developed. The dislocation microstructure was analyzed by TEM and related to the layer design, leading to the development of an atomic scale model for dislocation nucleation and propagation throughout the MBL layers.

A Contribution To The Study Of Extended Defects In Semiconductors

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Author : Nirmal David Theodore
language : en
Publisher:
Release Date : 1991

A Contribution To The Study Of Extended Defects In Semiconductors written by Nirmal David Theodore and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with categories.