Electronic Structure Of Defects In Iii Vi And Ii Vi Semiconductors And Novel Yb Based Intermetallics
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Electronic Structure Of Defects In Iii Vi And Ii Vi Semiconductors And Novel Yb Based Intermetallics
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Author : Zsolt Rák
language : en
Publisher:
Release Date : 2009
Electronic Structure Of Defects In Iii Vi And Ii Vi Semiconductors And Novel Yb Based Intermetallics written by Zsolt Rák and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Compound semiconductors categories.
Charged Semiconductor Defects
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Author : Edmund G. Seebauer
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-11-14
Charged Semiconductor Defects written by Edmund G. Seebauer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-14 with Science categories.
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors
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Author : Pearl Rochelle Berndt
language : en
Publisher:
Release Date : 2001
Analysis Of The Extended Defects In Ii Vi And Iii V Compound Semiconductors written by Pearl Rochelle Berndt and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Complex compounds categories.
Iii Nitride Semiconductors
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Author : M.O. Manasreh
language : en
Publisher: Elsevier
Release Date : 2000-12-06
Iii Nitride Semiconductors written by M.O. Manasreh and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-06 with Science categories.
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Defect And Impurity Engineered Semiconductors And Devices Iii Volume 719
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Author : S. Ashok
language : en
Publisher:
Release Date : 2002-08-09
Defect And Impurity Engineered Semiconductors And Devices Iii Volume 719 written by S. Ashok and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-08-09 with Technology & Engineering categories.
This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991
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Author : W. Jantsch
language : en
Publisher: CRC Press
Release Date : 1991-01-01
D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991 written by W. Jantsch and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-01-01 with Technology & Engineering categories.
Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Extended Defects In Epitaxial Ii Vi Semiconductors
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Author : Adam Wasenczuk
language : en
Publisher:
Release Date : 1998
Extended Defects In Epitaxial Ii Vi Semiconductors written by Adam Wasenczuk and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with categories.
Defects In Wide Bandgap Iii V And Ii Vi Semiconductors
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Author : Kelsey Jane Mirrielees
language : en
Publisher:
Release Date : 2023
Defects In Wide Bandgap Iii V And Ii Vi Semiconductors written by Kelsey Jane Mirrielees and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023 with categories.
Electronic Structure Of Iv Vi Semiconductors
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Author : Yvonne Tung Tsang
language : en
Publisher:
Release Date : 1970
Electronic Structure Of Iv Vi Semiconductors written by Yvonne Tung Tsang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1970 with categories.