Ballistic Electrons In A Submicron Semiconducting Structure
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Ballistic Electrons In A Submicron Semiconducting Structure
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Author : Harold Urey Baranger
language : en
Publisher:
Release Date : 1986
Ballistic Electrons In A Submicron Semiconducting Structure written by Harold Urey Baranger and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Electron transport categories.
Computational Aspects Of Vlsi Design With An Emphasis On Semiconductor Device Simulation
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Author : Randolph E. Bank
language : en
Publisher: American Mathematical Soc.
Release Date : 1990-02-15
Computational Aspects Of Vlsi Design With An Emphasis On Semiconductor Device Simulation written by Randolph E. Bank and has been published by American Mathematical Soc. this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-02-15 with Technology & Engineering categories.
Numerical simulation is rapidly becoming an important part of the VLSI design process, allowing the engineer to test, evaluate, and optimize various aspects of chip design without resorting to the costly and time-consuming process of fabricating prototypes. This procedure not only accelerates the design process, but also improves the end product, since it is economically feasible to numerically simulate many more options than might otherwise be considered. With the enhanced computing power of today's computers, more sophisticated models are now being developed. This volume contains the proceedings of the AMS-SIAM Summer Seminar on Computational Aspects of VLSI Design, held at the Institute for Mathematics and Its Applications at the University of Minnesota, in the spring of 1987. The seminar featured presentations by some of the top experts working in this area. Their contributions to this volume form an excellent overview of the mathematical and computational problems arising in this area.
Frontiers In Nanoscale Science Of Micron Submicron Devices
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Author : A.-P. Jauho
language : en
Publisher: Springer Science & Business Media
Release Date : 1996-10-31
Frontiers In Nanoscale Science Of Micron Submicron Devices written by A.-P. Jauho and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-10-31 with Technology & Engineering categories.
Nanoscale Science, whose birth and further growth and development has been driven by the needs of the microelectronics industry on one hand, and by the sheer human curiosity on the other hand, has given researchers an unprecedented capability to design and construct devices whose function ality is based on quantum and mesoscopic effects. A necessary step in this process has been the development of reliable fabrication techniques in the nanometer scale: two-dimensional systems, quantum wires and dots, and Coulomb blockade structures with almost ideal properties can nowadays be fabricated, and subjected to experimental studies. How does one fabricate micro/nanostructures of low dimensionality? How does one perform a nanoscale characterization of these structures? What are the fundamental properties typical to the structures? Which new physical processes in nanostructures need to be understood? What new physical processes may allow us to create new nanostructures? An improved understanding of these topics is necessary for creation of new concepts for future electronic and optoelectronic devices and for characterizing device structures based on those concepts.
Semiconductors
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Author : W.M. Jr. Coughran
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductors written by W.M. Jr. Coughran and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Mathematics categories.
This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Our goal was to foster interaction in this interdisciplinary field which involves electrical engineers, computer scientists, semiconductor physicists and mathematicians, from both university and industry. In particular, the program was meant to encourage the participation of numerical and mathematical analysts with backgrounds in ordinary and partial differential equations, to help get them involved in the mathematical as pects of semiconductor models and circuits. We are grateful to W.M. Coughran, Jr., Julian Cole, Peter Lloyd, and Jacob White for helping Farouk Odeh organize this activity and trust that the proceedings will provide a fitting memorial to Farouk. We also take this opportunity to thank those agencies whose financial support made the program possible: the Air Force Office of Scientific Research, the Army Research Office, the National Science Foundation, and the Office of Naval Research. A vner Friedman Willard Miller, J r. Preface to Part II Semiconductor and integrated-circuit modeling are an important part of the high technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering work stations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such mod eling.
The Drift Diffusion Equation And Its Applications In Mosfet Modeling
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Author : Wilfried Hänsch
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
The Drift Diffusion Equation And Its Applications In Mosfet Modeling written by Wilfried Hänsch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.
Mathematical Problems In Semiconductor Physics
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Author : P A Marcati
language : en
Publisher: CRC Press
Release Date : 1995-12-15
Mathematical Problems In Semiconductor Physics written by P A Marcati and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-12-15 with Science categories.
This collection of papers arises from a workshop held at the Istituto per le Applicazioni del Calcolo of the Italian CNR. The first part of the book includes the material covered by three mini-series of lectures at graduate level on some advanced mathematical topics in semiconductor physics. The second part of the book includes more specialized topics, covered by invited speakers in their individual lectures.
Physics Of Low Dimensional Semiconductor Structures
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Author : Paul N. Butcher
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Physics Of Low Dimensional Semiconductor Structures written by Paul N. Butcher and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.
Quantum Semiconductor Structures
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Author : Claude Weisbuch
language : en
Publisher: Elsevier
Release Date : 1991-05-12
Quantum Semiconductor Structures written by Claude Weisbuch and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-05-12 with Science categories.
A review of the fundamentals of quantified semiconductor structures (first seen as an introductory chapter in Volume 24 of "Semiconductors and Semimetals"), which covers the basics of electronic states, optical interactions and quantum transport in two-dimensional quantified systems.
Nanoscale Mos Transistors
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Author : David Esseni
language : en
Publisher: Cambridge University Press
Release Date : 2011-01-20
Nanoscale Mos Transistors written by David Esseni and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-20 with Technology & Engineering categories.
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Hot Carrier Degradation In Semiconductor Devices
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Author : Tibor Grasser
language : en
Publisher: Springer
Release Date : 2014-10-29
Hot Carrier Degradation In Semiconductor Devices written by Tibor Grasser and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-10-29 with Technology & Engineering categories.
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.