Capacitance Spectroscopy Of Semiconductors
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Capacitance Spectroscopy Of Semiconductors
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Author : Jian V. Li
language : en
Publisher: CRC Press
Release Date : 2018-07-06
Capacitance Spectroscopy Of Semiconductors written by Jian V. Li and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-07-06 with Science categories.
Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.
Purity Control Of Semiconductors By The Method Of Capacitance Transient Spectroscopy
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Author : Lev Solomonovich Berman
language : en
Publisher:
Release Date : 1995
Purity Control Of Semiconductors By The Method Of Capacitance Transient Spectroscopy written by Lev Solomonovich Berman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Semiconductors categories.
Semiconductor Measurement Technology
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Author : National Institute of Standards and Technology (U.S.)
language : en
Publisher:
Release Date : 1990
Semiconductor Measurement Technology written by National Institute of Standards and Technology (U.S.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with Semiconductors categories.
Semiconductor Physical Electronics
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Author : Sheng S. Li
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Physical Electronics written by Sheng S. Li and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces
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Author : Carl Wilmsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces written by Carl Wilmsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Semiconductor Material And Device Characterization
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Author : Dieter K. Schroder
language : en
Publisher: John Wiley & Sons
Release Date : 2015-06-29
Semiconductor Material And Device Characterization written by Dieter K. Schroder and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-29 with Technology & Engineering categories.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Identification Of Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-27
Identification Of Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-27 with Science categories.
GENERAL DESCRIPTION OF THE SERIES Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUME This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
The Spectroscopy Of Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 1992-07-31
The Spectroscopy Of Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-07-31 with Technology & Engineering categories.
Spectroscopic techniques are among the most powerful characterization methods used to study semiconductors. This volume presents reviews of a number of major spectroscopic techniques used to investigate bulk and artificially structured semiconductors including: photoluminescence, photo-reflectance, inelastic light scattering, magneto-optics, ultrafast work, piezo-spectroscopy methods, and spectroscopy at extremely low temperatures and high magnetic fields. Emphasis is given to major semiconductor systems, and artificially structured materials such as GaAs, InSb, Hg1-xCdxTe and MBE grown structures based upon GaAs/AlGaAs materials. Both the spectroscopic novice and the expert will benefit from the descriptions and discussions of the methods, principles, and applications relevant to today's semiconductor structures. Key Features * Discusses the latest advances in spectroscopic techniques used to investigate bulk and artificially structured semiconductors * Features detailed review articles which cover basic principles * Highlights specific applications such as the use of laser spectroscopy for the characterization of GaAs quantum well structures
Narrow Gap Semiconductors 1995
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Author : J.L Reno
language : en
Publisher: CRC Press
Release Date : 2020-11-25
Narrow Gap Semiconductors 1995 written by J.L Reno and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-11-25 with Science categories.
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.