Capacitance Spectroscopy Of Semiconductors
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Capacitance Spectroscopy Of Semiconductors
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Author : Jian V. Li
language : en
Publisher: CRC Press
Release Date : 2018-07-06
Capacitance Spectroscopy Of Semiconductors written by Jian V. Li and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-07-06 with Science categories.
Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.
Semiconductor Material And Device Characterization
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Author : Dieter K. Schroder
language : en
Publisher: John Wiley & Sons
Release Date : 2015-06-29
Semiconductor Material And Device Characterization written by Dieter K. Schroder and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-29 with Technology & Engineering categories.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Narrow Gap Semiconductors 1995
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Author : J.L Reno
language : en
Publisher: CRC Press
Release Date : 2020-11-25
Narrow Gap Semiconductors 1995 written by J.L Reno and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-11-25 with Science categories.
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
High Magnetic Fields In The Physics Of Semiconductors Proceedings Of The 12th International Conference In 2 Volumes
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Author : Gottfried Landwehr
language : en
Publisher: World Scientific
Release Date : 1997-04-23
High Magnetic Fields In The Physics Of Semiconductors Proceedings Of The 12th International Conference In 2 Volumes written by Gottfried Landwehr and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-04-23 with categories.
This volume contains contributions presented at the 12th International Conference on High Magnetic Fields in Semiconductor Physics. In order to give an overview, 37 lecturers not only reviewed the latest results in their field, but also gave a general introduction. The rapid development of semiconductor physics and technology during the last few years has resulted in an extensive application of high magnetic fields in both fundamental and applied research; more than 160 contributed papers were presented as posters.Sixteen years after its discovery, the quantum Hall effect (QHE) is still a subject of high activity. Many new results on the fractional QHE were presented; in addition to 6 invited papers, there were 43 contributions. Another field of high activity is magneto-optics, and 49 posters were presented. Magnetotransport also turned out to be of high interest, and magnetic semiconductors played a prominent role at the conference, too.Without doubt, the availability of superconducting magnets in most laboratories contributed to the growth of semiconductor physics in high magnetic fields. Because not all experiments can be performed in fields up to 10 or 15 teslas, high magnetic field laboratories offering larger fields are indispensable. There were reports from four laboratories on present work going on at these installations.
Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes
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Author : David J Lockwood
language : en
Publisher: World Scientific
Release Date : 1995-01-20
Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes written by David J Lockwood and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-01-20 with categories.
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Compound Semiconductor Radiation Detectors
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Author : Alan Owens
language : en
Publisher: Taylor & Francis
Release Date : 2016-04-19
Compound Semiconductor Radiation Detectors written by Alan Owens and has been published by Taylor & Francis this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-19 with Science categories.
For many applications, compound semiconductors are now viable competitors to elemental semiconductors because of their wide range of physical properties. This book describes all aspects of radiation detection and measurement using compound semiconductors, including crystal growth, detector fabrication, contacting, and spectroscopic performance (with particular emphasis on the X- and gamma-ray regimes). A concentrated reference for researchers in various disciplines as well as graduate students in specialized courses, the text outlines the potential and limitations of semiconductor detectors.
Device Physics Of Narrow Gap Semiconductors
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Author : Junhao Chu
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-10-13
Device Physics Of Narrow Gap Semiconductors written by Junhao Chu and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-10-13 with Technology & Engineering categories.
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.
Identification Of Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-27
Identification Of Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-27 with Science categories.
GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Electronic Structure Of Metal Semiconductor Contacts
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Structure Of Metal Semiconductor Contacts written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-