Defects And Diffusion In Ii Vi Compounds
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Defects And Diffusion In Ii Vi Compounds
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Author : David Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 1999-08-25
Defects And Diffusion In Ii Vi Compounds written by David Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-08-25 with Technology & Engineering categories.
A 10-Year Retrospective
Defects And Diffusion In Ii Vi Compounds
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Author :
language : en
Publisher:
Release Date : 1999
Defects And Diffusion In Ii Vi Compounds written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.
This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT. The other papers discuss the topics of dislocations in molecular beam epitaxial ZnSe layers on GaAs(001), the interdiffusion of Mn and Mg in CdTe-based quantum wells - again reflecting the importance of the (Cd,Hg)Te system, and the transmission electron microscopic study of dislocations in ZnTe/GaAs epitaxial heterostructures. The general subject of grain-boundary diffusion is treated in two papers which consider the grain boundary to be a 3-dimensional structure, rather than adopting the traditional view of its being a merely 2-dimensional interface. Although the specific system analyzed experimentally here is metallic, rather than semiconducting, this innovative approach is very likely to be relevant to the boundaries between semiconductors; with their relatively complex structures.
Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications
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Author : Peter Capper
language : en
Publisher: Springer Science & Business Media
Release Date : 1997-10-31
Narrow Gap Ii Vi Compounds For Optoelectronic And Electromagnetic Applications written by Peter Capper and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-10-31 with Technology & Engineering categories.
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.
Widegap Ii Vi Compounds For Opto Electronic Applications
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Author : H.E. Rúda
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Widegap Ii Vi Compounds For Opto Electronic Applications written by H.E. Rúda and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in related areas of II-VI materials research. The motivation for preparing this book originated from the need for a current review of this fertile and important field. A primary goal of this book is therefore to present an eclectic synthesis of these sometimes diverse fields of investigation. This book consists of three main sections, namely (1) Growth and Properties, (2) Materials Characterization and (3) Devices. Part One presents an overall perspective of the state of the art in the preparation of the widegap II-VI materials. Part Two concentrates on current topics pertinent to the characterization of these materials from the unique perspective of each of the authors. Part Three focuses on advances in the opto-electronic applications of these materials. The material in this section runs the gamut from addressing recent advances in device areas which date back to some of the earliest reported research in these materials, to tackling some quite new and exciting future directions.
Semiconducting Ii Vi Iv Vi And V Vi Compounds
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Author : N.Kh. Abrikosov
language : en
Publisher: Springer
Release Date : 2013-12-01
Semiconducting Ii Vi Iv Vi And V Vi Compounds written by N.Kh. Abrikosov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-12-01 with Technology & Engineering categories.
Diffusion And Defect Data
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Author :
language : en
Publisher:
Release Date : 1999
Diffusion And Defect Data written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Crystals categories.
Physics And Chemistry Of Ii Vi Compounds
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Author : Manuel Aven
language : en
Publisher:
Release Date : 1967
Physics And Chemistry Of Ii Vi Compounds written by Manuel Aven and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1967 with Cadmium compounds categories.
Positron Annihilation In Semiconductors
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Author : Reinhard Krause-Rehberg
language : en
Publisher: Springer Science & Business Media
Release Date : 1999-01-21
Positron Annihilation In Semiconductors written by Reinhard Krause-Rehberg and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-01-21 with Science categories.
This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Defects In Semiconductors Ii
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Author : Subhash Mahajan
language : en
Publisher: North Holland
Release Date : 1983
Defects In Semiconductors Ii written by Subhash Mahajan and has been published by North Holland this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with Science categories.
Defect Control In Semiconductors
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Author : K. Sumino
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Defect Control In Semiconductors written by K. Sumino and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.