Defects In Semiconductors Ii
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Point Defects In Semiconductors Ii
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Author : J. Bourgoin
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Point Defects In Semiconductors Ii written by J. Bourgoin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.
Defects In Semiconductors Ii
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Author : Subhash Mahajan
language : en
Publisher: North Holland
Release Date : 1983
Defects In Semiconductors Ii written by Subhash Mahajan and has been published by North Holland this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with Science categories.
Extended Defects In Semiconductors
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Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Dopants And Defects In Semiconductors
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Author : Matthew D. McCluskey
language : en
Publisher: CRC Press
Release Date : 2012-02-23
Dopants And Defects In Semiconductors written by Matthew D. McCluskey and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-23 with Science categories.
Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts.The authors first present introductory concepts, including basic semiconductor theory, defect classif
Identification Of Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-27
Identification Of Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-27 with Science categories.
GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.
Defects In Semiconductors Ii
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Author : Subhash Mahajan
language : en
Publisher:
Release Date : 1983
Defects In Semiconductors Ii written by Subhash Mahajan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1983 with categories.
Defect And Impurity Engineered Semiconductors Ii Volume 510
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Author : S. Ashok
language : en
Publisher: Cambridge University Press
Release Date : 1998-09-14
Defect And Impurity Engineered Semiconductors Ii Volume 510 written by S. Ashok and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-09-14 with Technology & Engineering categories.
The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
High Magnetic Fields In Semiconductor Physics Ii
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Author : Gottfried Landwehr
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
High Magnetic Fields In Semiconductor Physics Ii written by Gottfried Landwehr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
Optics Of Semiconductors And Their Nanostructures
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Author : Heinz Kalt
language : en
Publisher: Springer Science & Business Media
Release Date : 2004-07-13
Optics Of Semiconductors And Their Nanostructures written by Heinz Kalt and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-07-13 with Science categories.
In recent years the field of semiconductor optics has been pushed to several extremes. The size of semiconductor structures has shrunk to dimensions of a few nanometers, the semiconductor-light interaction is studied on timescales as fast as a few femtoseconds, and transport properties on a length scale far below the wavelength of light have been revealed. These advances were driven by rapid improvements in both semiconductor and optical technologies and were further facilitated by progress in the theoretical description of optical excitations in semiconductors. This book, written by leading experts in the field, provides an up-to-date introduction to the optics of semiconductors and their nanostructures so as to help the reader understand these exciting new developments. It also discusses recently established applications, such as blue-light emitters, as well as the quest for future applications in areas such as spintronics, quantum information processing, and third-generation solar cells.
Statistical Physics Ii
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Author : Ryogo Kubo
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Statistical Physics Ii written by Ryogo Kubo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Statistical Physics II introduces nonequilibrium theories of statistical mechanics from the viewpoint of the fluctuation-disipation theorem. Emphasis is placed on the relaxation from nonequilibrium to equilibrium states, the response of a system to an external disturbance, and general problems involved in deriving a macroscopic physical process from more basic underlying processes. Fundamental concepts and methods are stressed, rather than the numerous individual applications.