Epitaxy

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Epitaxy

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Author : Marian A. Herman
language : en
Publisher: Springer Science & Business Media
Release Date : 2004-01-22

Epitaxy written by Marian A. Herman and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-01-22 with Science categories.

In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.

Molecular Beam Epitaxy

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Author : Mohamed Henini
language : en
Publisher: Elsevier
Release Date : 2018-06-27

Molecular Beam Epitaxy written by Mohamed Henini and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-27 with Science categories.

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Silicon Molecular Beam Epitaxy

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Author : E. Kasper
language : en
Publisher: CRC Press
Release Date : 2018-05-04

Silicon Molecular Beam Epitaxy written by E. Kasper and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-04 with Technology & Engineering categories.

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Investigation On Sige Selective Epitaxy For Source And Drain Engineering In 22 Nm Cmos Technology Node And Beyond

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Author : Guilei Wang
language : en
Publisher: Springer Nature
Release Date : 2019-09-20

Investigation On Sige Selective Epitaxy For Source And Drain Engineering In 22 Nm Cmos Technology Node And Beyond written by Guilei Wang and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-09-20 with Technology & Engineering categories.

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Liquid Phase Epitaxy Of Electronic Optical And Optoelectronic Materials

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Author : Peter Capper
language : en
Publisher: John Wiley & Sons
Release Date : 2007-08-20

Liquid Phase Epitaxy Of Electronic Optical And Optoelectronic Materials written by Peter Capper and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-08-20 with Technology & Engineering categories.

Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.

Introduction To Microfabrication

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Author : Sami Franssila
language : en
Publisher: John Wiley & Sons
Release Date : 2005-01-28

Introduction To Microfabrication written by Sami Franssila and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-01-28 with Technology & Engineering categories.

Microfabrication is the key technology behind integrated circuits,microsensors, photonic crystals, ink jet printers, solar cells andflat panel displays. Microsystems can be complex, but the basicmicrostructures and processes of microfabrication are fairlysimple. Introduction to Microfabrication shows how the commonmicrofabrication concepts can be applied over and over again tocreate devices with a wide variety of structures andfunctions. Featuring: * A comprehensive presentation of basic fabrication processes * An emphasis on materials and microstructures, rather than devicephysics * In-depth discussion on process integration showing how processes,materials and devices interact * A wealth of examples of both conceptual and real devices Introduction to Microfabrication includes 250 homework problems forstudents to familiarise themselves with micro-scale materials,dimensions, measurements, costs and scaling trends. Both researchand manufacturing topics are covered, with an emphasis on silicon,which is the workhorse of microfabrication. This book will serve as an excellent first text for electricalengineers, chemists, physicists and materials scientists who wishto learn about microstructures and microfabrication techniques,whether in MEMS, microelectronics or emerging applications.

Epitaxy Of Semiconductors

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Author : Udo W. Pohl
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-01-11

Epitaxy Of Semiconductors written by Udo W. Pohl and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-01-11 with Technology & Engineering categories.

Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.

Low Temperature Epitaxial Growth Of Semiconductors

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Author : Takashi Hariu
language : en
Publisher: World Scientific
Release Date : 1991

Low Temperature Epitaxial Growth Of Semiconductors written by Takashi Hariu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.

Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Atomistic Aspects Of Epitaxial Growth

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Author : Miroslav Kotrla
language : en
Publisher: Springer Science & Business Media
Release Date : 2002-07-31

Atomistic Aspects Of Epitaxial Growth written by Miroslav Kotrla and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-07-31 with Science categories.

Proceedings of the NATO Advanced Research Workshop, held in Dasia, Corfu, Greece, June 25-30, 2001

Materials Interfaces

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Author : D. Wolf
language : en
Publisher: Springer Science & Business Media
Release Date : 1992-10-31

Materials Interfaces written by D. Wolf and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-10-31 with Technology & Engineering categories.

Many of the most important properties of materials in high-technology applications are strongly influenced or even controlled by the presence of solid interfaces. In this work, leading international authorities review the broad range of subjects in this field focusing on the atomic level properties of solid interfaces.