Evaluating Printability Of Buried Native Euv Mask Phase Defects Through A Modeling And Simulation Approach
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Evaluating Printability Of Buried Native Euv Mask Phase Defects Through A Modeling And Simulation Approach
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Author :
language : en
Publisher:
Release Date : 2015
Evaluating Printability Of Buried Native Euv Mask Phase Defects Through A Modeling And Simulation Approach written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native EUV mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability caused by them. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a novel level-set multilayer growth model was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. The same tool was used for performing the actual deposition of the multilayer stack over the characterized native defects, thus ensuring a fair comparison between the actual multilayer growth over native defects, and modeled multilayer growth over regular-shaped defects. Further, the printability of the characterized native defects was studied with the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory (LBNL). Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect's width and height, irrespective of its shape. This would allow us to predict printability of the arbitrarily-shaped native EUV mask defects in a systematic and robust manner.
Quantitative Evaluation Of Mask Phase Defects From Through Focus Euv Aerial Images
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Author :
language : en
Publisher:
Release Date : 2011
Quantitative Evaluation Of Mask Phase Defects From Through Focus Euv Aerial Images written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Mask defects inspection and imaging is one of the most important issues for any pattern transfer lithography technology. This is especially true for EUV lithography where the wavelength-specific properties of masks and defects necessitate actinic inspection for a faithful prediction of defect printability and repair performance. In this paper we will present a technique to obtain a quantitative characterization of mask phase defects from EUV aerial images. We apply this technique to measure the aerial image phase of native defects on a blank mask, measured with the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV zoneplate microscope that operates at Lawrence Berkeley National Laboratory. The measured phase is compared with predictions made from AFM top-surface measurements of those defects. While amplitude defects are usually easy to recognize and quantify with standard inspection techniques like scanning electron microscopy (SEM), defects or structures that have a phase component can be much more challenging to inspect. A phase defect can originate from the substrate or from any level of the multilayer. In both cases its effect on the reflected field is not directly related to the local topography of the mask surface, but depends on the deformation of the multilayer structure. Using the AIT, we have previously showed that EUV inspection provides a faithful and reliable way to predict the appearance of mask defect on the printed wafer; but to obtain a complete characterization of the defect we need to evaluate quantitatively its phase component. While aerial imaging doesn't provide a direct measurement of the phase of the object, this information is encoded in the through focus evolution of the image intensity distribution. Recently we developed a technique that allows us to extract the complex amplitude of EUV mask defects using two aerial images from different focal planes. The method for the phase reconstruction is derived from the Gerchberg-Saxton (GS) algorithm, an iterative method that can be used to reconstruct phase and amplitude of an object from the intensity distributions in the image and in the pupil plane. The GS algorithm is equivalent to a two-parameter optimization problem and it needs exactly two constraints to be solved, namely two intensity distributions in different focal planes. In some formulations, adding any other constraint would result in an ill posed problem. On the other hand, the solution's stability and convergence time can both be improved using more information. We modified our complex amplitude reconstruction algorithm to use an arbitrary number of through focus images and we compared its performance with the previous version in terms of convergence speed, robustness and accuracy. We have demonstrated the phase-reconstruction method on native, mask-blank phase defects and compared the results with phase-predictions made from AFM data collected before and after the multilayer deposition. The method and the current results could be extremely useful for improving the modeling and understanding of native phase defects, their detectability, and their printability.
Investigation Of Buried Euv Mask Defect Printability Using Actinic Inspection And Fast Simulation
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Author :
language : en
Publisher:
Release Date : 2009
Investigation Of Buried Euv Mask Defect Printability Using Actinic Inspection And Fast Simulation written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
The fast simulator RADICAL and the Actinic Inspection Tool (AIT) are used in advance of availability of high volume manufacturing quality exposure tools, resists, and masks to assess the expected defect printability levels in production conditions. AIT images are analyzed to qualitatively demonstrate general trends in defect printability: defects smaller than 0.5nm tall on the multilayer surface can cause an unacceptable critical dimension (CD) change, CD change increases for taller defects, and defect printability varies asymmetrically through focus. RADICAL is used to derive quantitative limits for defect size and demonstrate the effects of focus and illumination for 22nm and 16nm dense lines. For 22nm dense lines at best focus a 0.8nm tall defect causes a 10% CD change. For 16nm lines a 0.4nm tall defect causes a 10% CD change. The CD is shown to be more sensitive to buried defects out of focus, but less sensitive to defects in focus if annular or dipole illumination is used.
Key Challenges In Euv Mask Technology
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Author : Yow-Gwo Wang
language : en
Publisher:
Release Date : 2005
Key Challenges In Euv Mask Technology written by Yow-Gwo Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography mask technology: mask inspection and mask 3D effects on imaging performance. Actinic (at- wavelength) mask inspection (both blank and patterned mask) is of critical concern for EUV lithography. In this dissertation, systematic studies exploring the optimal optical system design to improve the defect detection sensitivity for both actinic mask blank and patterned mask inspection tools using EUV light are presented. For EUV mask blank in- spection, a complete discussion is conducted to compare the conventional bright field method and the Zernike phase contrast method on their phase defect detection sensitivity by thin mask simulations and experiments using the SHARP EUV microscope at Lawrence Berke- ley National Laboratory (LBNL). The study shows that higher defect detection sensitivity and in-focus inspection capability can be achieved by the Zernike phase contrast method, while the conventional bright field method needs through-focus scanning and results in lower defect detection sensitivity. Experimental results show that a programmed defect as small as 0.35 nm in height is detected at best focus with a signal-to-noise ratio (SNR) ≈ 8 by the Zernike phase contrast method. With the considerations of various noise sources and system design, the thin mask simulation results show that the dark field method has better detection efficiency in inspection mode, while the Zernike phase contrast method is better in review mode (pixel size ≤ 25 nm). Further, the impact of pixel size, EUV source type, and photon collection efficiency for a dark field based actinic blank inspection tool is discussed by thin mask simulation. The simulation results show the complex correlation between each parameter on defect inspection efficiency and also show that 10-watt EUV source power and 100 nm pixel size are needed to capture a phase defect of height 0.5 nm. For EUV patterned mask inspection, the possibility of using the optimum phase shift in the pupil plane to improve inspection efficiency is discussed using a thin mask model. Then the nature of the EUV mask pattern defect is analyzed by its near field distribution using a thick mask model. The simulation results indicate that, as a result of 3D effects leading to phase artifacts, pattern defects cannot be simply treated as ideal absorber defects. The results can affect the choice of optimal patterned mask inspection tool design. Moreover, a study of a bright field based EUV actinic pattern inspection tool design using a hybrid (2D + 3D) model is presented, showing that the impact of noise sources and optical design on critical pattern defects detection sensitivity. The study shows that introducing a − 50 nm defocus into the inspection system can improve the SNR by 50%. The impact of EUV sub-resolution assist feature (SRAF) on mitigation of mask 3D effects is discussed by rigorous 3D modeling. The simulation results show that introducing SRAFs in the mask design induces even stronger effective single pole aberration into the imaging system to balance the Bossung curve. Asymmetric SRAFs pattern placement can achieve a 21% improvement of the process window. Moreover, the complex interaction between the main feature and the SRAFs is analyzed by systematic position sensitivity studies. Bossung tilt sensitivity with respect to the relative positions between main feature and SRAFs is shown, which indicates that different location precision requirements are needed for SRAFs during the mask-making process.
Fast Simulation Of Buried Euv Mask Defect Interaction With Absorber Features
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Author : Chris Heinz Clifford
language : en
Publisher:
Release Date : 2007
Fast Simulation Of Buried Euv Mask Defect Interaction With Absorber Features written by Chris Heinz Clifford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Printability And Inspectability Of Defects On The Euv Mask For Sub32nm Half Pitch Hvm Application
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Author :
language : en
Publisher:
Release Date : 2011
Printability And Inspectability Of Defects On The Euv Mask For Sub32nm Half Pitch Hvm Application written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing, yet little data is available for understanding native defects on real masks. In this paper, a full field EUV mask is fabricated to see the printability of various defects on the mask. Programmed pit defect shows that minimum printable size of pits could be 17 nm of SEVD from the AIT. However 23.1nm in SEVD is printable from the EUV ADT. Defect printability and identification of its source along from blank fabrication to mask fabrication were studied using various inspection tools. Capture ratio of smallest printable defects was improved to 80% using optimized stack of metrical on wafer and state-of-art wafer inspection tool. Requirement of defect mitigation technology using fiducial mark are defined.
Evaluating Euv Mask Pattern Imaging With Two Euv Microscopes
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Author :
language : en
Publisher:
Release Date : 2008
Evaluating Euv Mask Pattern Imaging With Two Euv Microscopes written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Aerial image measurement plays a key role in the development of patterned reticles for each generation of lithography. Studying the field transmitted (reflected) from EUV masks provides detailed information about potential disruptions caused by mask defects, and the performance of defect repair strategies, without the complications of photoresist imaging. Furthermore, by measuring the continuously varying intensity distribution instead of a thresholded, binary resist image, aerial image measurement can be used as feedback to improve mask and lithography system modeling methods. Interest in EUV, at-wavelength, aerial image measurement lead to the creation of several research tools worldwide. These tools are used in advanced mask development work, and in the evaluation of the need for commercial at-wavelength inspection tools. They describe performance measurements of two such tools, inspecting the same EUV mask in a series of benchmarking tests that includes brightfield and darkfield patterns. One tool is the SEMATECH Berkeley Actinic Inspection Tool (AIT) operating on a bending magnet beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. The AIT features an EUV Fresnel zoneplate microscope that emulates the numerical aperture of a 0.25-NA stepper, and projects the aerial image directly onto a CCD camera, with 700x magnification. The second tool is an EUV microscope (EUVM) operating at the NewSUBARU synchrotron in Hyogo, Japan. The NewSUBARU tool projects the aerial image using a reflective, 30x Schwarzschild objective lens, followed by a 10-200x x-ray zooming tube. The illumination conditions and the imaging etendue are different for the two tools. The benchmarking measurements were used to determine many imaging and performance properties of the tools, including resolution, modulation transfer function (MTF), aberration magnitude, aberration field-dependence (including focal-plane tilt), illumination uniformity, line-edge roughness, and flare. These measurements reveal the current state of the art in at-wavelength inspection performance, and will be a useful reference as performance improves over time.
Euv Actinic Defect Inspection And Defect Printability At The Sub 32 Nm Half Pitch
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Author :
language : en
Publisher:
Release Date : 2009
Euv Actinic Defect Inspection And Defect Printability At The Sub 32 Nm Half Pitch written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.
A Study Of Defects On Euv Mask Using Blank Inspection Patterned Mask Inspection And Wafer Inspection
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Author :
language : en
Publisher:
Release Date : 2010
A Study Of Defects On Euv Mask Using Blank Inspection Patterned Mask Inspection And Wafer Inspection written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. yet link data is available for understanding native defects on real masks. In this paper, a full-field EUV mask is fabricated to investigate the printability of various defects on the mask. The printability of defects and identification of their source from mask fabrication to handling were studied using wafer inspection. The printable blank defect density excluding particles and patterns is 0.63 cm2. Mask inspection is shown to have better sensitivity than wafer inspection. The sensitivity of wafer inspection must be improved using through-focus analysis and a different wafer stack.