Evaluation Of Advanced Semiconductor Materials By Electron Microscopy

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Evaluation Of Advanced Semiconductor Materials By Electron Microscopy

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Author : David Cherns
language : en
Publisher:
Release Date : 1990-01-01

Evaluation Of Advanced Semiconductor Materials By Electron Microscopy written by David Cherns and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-01-01 with categories.

Evaluation Of Advanced Semiconductor Materials By Electron Microscopy

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Author : David Cherns
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Evaluation Of Advanced Semiconductor Materials By Electron Microscopy written by David Cherns and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Medical categories.

The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.

Advances In Imaging And Electron Physics

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Author : Peter W. Hawkes
language : en
Publisher: Academic Press
Release Date : 2002-11-05

Advances In Imaging And Electron Physics written by Peter W. Hawkes and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-11-05 with Technology & Engineering categories.

Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.

Analytical Techniques For The Characterization Of Compound Semiconductors

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Author : G. Bastard
language : en
Publisher: Elsevier
Release Date : 1991-07-26

Analytical Techniques For The Characterization Of Compound Semiconductors written by G. Bastard and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991-07-26 with Science categories.

This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.

Science And Engineering Of One And Zero Dimensional Semiconductors

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Author : Steven P. Beaumont
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Science And Engineering Of One And Zero Dimensional Semiconductors written by Steven P. Beaumont and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

This volume comprises the proceedings of the NATO Advanced Research Workshop on the Science and Engineering of 1- and O-dimensional semiconductors held at the University of Cadiz from 29th March to 1st April 1989, under the auspices of the NATO International Scientific Exchange Program. There is a wealth of scientific activity on the properties of two-dimensional semiconductors arising largely from the ease with which such structures can now be grown by precision epitaxy techniques or created by inversion at the silicon-silicon dioxide interface. Only recently, however, has there burgeoned an interest in the properties of structures in which carriers are further confined with only one or, in the extreme, zero degrees of freedom. This workshop was one of the first meetings to concentrate almost exclusively on this subject: that the attendance of some forty researchers only represented the community of researchers in the field testifies to its rapid expansion, which has arisen from the increasing availability of technologies for fabricating structures with small enough (sub - O. I/tm) dimensions. Part I of this volume is a short section on important topics in nanofabrication. It should not be assumed from the brevity of this section that there is little new to be said on this issue: rather that to have done justice to it would have diverted attention from the main purpose of the meeting which was to highlight experimental and theoretical research on the structures themselves.

Microscopy Of Semiconducting Materials 1991 Proceedings Of The Institute Of Physics Conference Held At Oxford University 25 28 March 1991

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Author : A. G. Cullis
language : en
Publisher: CRC Press
Release Date : 1991

Microscopy Of Semiconducting Materials 1991 Proceedings Of The Institute Of Physics Conference Held At Oxford University 25 28 March 1991 written by A. G. Cullis and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Art categories.

The seventh conference on the Microscopy of Semiconducting Materials was held at Oxford University on 25-28 March 1991. As in previous years the conference had a totally international flavour with many of the world's leading researchers present. Scientific sponsorship was provided by the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This volume contains both the invited and contributed papers from the

Widegap Ii Vi Compounds For Opto Electronic Applications

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Author : H.E. Rúda
language : en
Publisher: Springer Science & Business Media
Release Date : 1992-01-31

Widegap Ii Vi Compounds For Opto Electronic Applications written by H.E. Rúda and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-01-31 with Technology & Engineering categories.

This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in related areas of II-VI materials research. The motivation for preparing this book originated from the need for a current review of this fertile and important field. A primary goal of this book is therefore to present an eclectic synthesis of these sometimes diverse fields of investigation. This book consists of three main sections, namely (1) Growth and Properties, (2) Materials Characterization and (3) Devices. Part One presents an overall perspective of the state of the art in the preparation of the widegap II-VI materials. Part Two concentrates on current topics pertinent to the characterization of these materials from the unique perspective of each of the authors. Part Three focuses on advances in the opto-electronic applications of these materials. The material in this section runs the gamut from addressing recent advances in device areas which date back to some of the earliest reported research in these materials, to tackling some quite new and exciting future directions.

Silicon Molecular Beam Epitaxy

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Author : Erwin Kasper
language : en
Publisher: Elsevier
Release Date : 2012-12-02

Silicon Molecular Beam Epitaxy written by Erwin Kasper and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

Resonant Tunneling In Semiconductors

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Author : L.L. Chang
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Resonant Tunneling In Semiconductors written by L.L. Chang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.

Spectroscopy Of Semiconductor Microstructures

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Author : Gerhard Fasol
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29

Spectroscopy Of Semiconductor Microstructures written by Gerhard Fasol and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.

Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989