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Impurity Doping Processes In Silicon


Impurity Doping Processes In Silicon
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Impurity Doping Processes In Silicon


Impurity Doping Processes In Silicon
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Author : F.F.Y. Wang
language : en
Publisher: Elsevier
Release Date : 2012-12-02

Impurity Doping Processes In Silicon written by F.F.Y. Wang and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.


This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.



Analysis And Simulation Of Semiconductor Devices


Analysis And Simulation Of Semiconductor Devices
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Author : S. Selberherr
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Analysis And Simulation Of Semiconductor Devices written by S. Selberherr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.


The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.



Semiconductor Material And Device Characterization


Semiconductor Material And Device Characterization
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Author : Dieter K. Schroder
language : en
Publisher: John Wiley & Sons
Release Date : 2015-06-29

Semiconductor Material And Device Characterization written by Dieter K. Schroder and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-29 with Technology & Engineering categories.


This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.



Process And Device Simulation For Mos Vlsi Circuits


Process And Device Simulation For Mos Vlsi Circuits
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Author : P. Antognetti
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Process And Device Simulation For Mos Vlsi Circuits written by P. Antognetti and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.



Proceedings Of The Second International Symposium On Process Physics And Modeling In Semiconductor Technology


Proceedings Of The Second International Symposium On Process Physics And Modeling In Semiconductor Technology
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Author : G. R. Srinivasan
language : en
Publisher:
Release Date : 1991

Proceedings Of The Second International Symposium On Process Physics And Modeling In Semiconductor Technology written by G. R. Srinivasan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Semiconductors categories.




Introduction To Microelectronics To Nanoelectronics


Introduction To Microelectronics To Nanoelectronics
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Author : Manoj Kumar Majumder
language : en
Publisher: CRC Press
Release Date : 2020-11-24

Introduction To Microelectronics To Nanoelectronics written by Manoj Kumar Majumder and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-11-24 with Science categories.


Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.



Defects In Semiconductors


Defects In Semiconductors
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Author :
language : en
Publisher: Academic Press
Release Date : 2015-06-08

Defects In Semiconductors written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-08 with Technology & Engineering categories.


This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors



Simulation Of Semiconductor Processes And Devices 2001


Simulation Of Semiconductor Processes And Devices 2001
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Author : Dimitris Tsoukalas
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Simulation Of Semiconductor Processes And Devices 2001 written by Dimitris Tsoukalas and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.



Integrated Circuit Fabrication


Integrated Circuit Fabrication
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Author : Shubham Kumar
language : en
Publisher: CRC Press
Release Date : 2021-04-28

Integrated Circuit Fabrication written by Shubham Kumar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-04-28 with Technology & Engineering categories.


This book covers theoretical and practical aspects of all major steps in the fabrication sequence. This book can be used conveniently in a semester length course on integrated circuit fabrication. This text can also serve as a reference for practicing engineer and scientist in the semiconductor industry. IC Fabrication are ever demanding of technology in rapidly growing industry growth opportunities are numerous. A recent survey shows that integrated circuit currently outnumber humans in UK, USA, India and China. The spectacular advances in the development and application of integrated circuit technology have led to the emergence of microelectronic process engineering as an independent discipline. Integrated circuit fabrication text books typically divide the fabrication sequence into a number of unit processes that are repeated to form the integrated circuit. The effect is to give the book an analysis flavor: a number of loosely related topics each with its own background material. Note: T& F does not sell or distribute the Hardback in India, Pakistan, Nepal, Bhutan, Bangladesh and Sri Lanka.



Introduction To Vlsi Systems


Introduction To Vlsi Systems
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Author : Ming-Bo Lin
language : en
Publisher: CRC Press
Release Date : 2011-11-28

Introduction To Vlsi Systems written by Ming-Bo Lin and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-11-28 with Technology & Engineering categories.


With the advance of semiconductors and ubiquitous computing, the use of system-on-a-chip (SoC) has become an essential technique to reduce product cost. With this progress and continuous reduction of feature sizes, and the development of very large-scale integration (VLSI) circuits, addressing the harder problems requires fundamental understanding