Integration Of Resistive Switching Devices In Crossbar Structures

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Integration Of Resistive Switching Devices In Crossbar Structures
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Author : Christian Nauenheim
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2010
Integration Of Resistive Switching Devices In Crossbar Structures written by Christian Nauenheim and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Integration Of Resistive Switching Devices In Crossbar Structures
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Author :
language : en
Publisher:
Release Date : 2010
Integration Of Resistive Switching Devices In Crossbar Structures written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Conventional CMOS-technology defined by optical lithography will reach its physical limits within the next years together with technologies adopted for data storage. This work presents and combines the alternative concepts of resistively switching devices, usable as nonvolatile memory elements or switches, and nano crossbar architecture, which defer these physical limits sustainably. The nano crossbar architecture consists of a functional component that is integrated between two perpendicularly crossing metallization lines. This configuration allows for a high integration density due to a minimal footprint of 4 F2 (F = minimum Feature size). The basic elements are straight metallization lines with excellent scaling capability and fabricated by competitive technologies such as nano imprint lithography. The functional component can be composed of reversibly switching TiO2, which is integrated into metal/ insulator/ metal elements (MIM). This can be operated by corresponding set- and reset- voltages between at least two resistance states, which represent a logic "0" or "1". The state is nonvolatile and can be nondestructively determined by voltages below these programming values. The field of application includes memory matrices, which are also named passive ReRAM (Resistive Random Access Memory), elements of the DRL (Diode-Resistor Logic) and RTL (Resistor-Transistor Logic), as well as router and multiplexer. Because of their passive properties, an active control circuitry, which is currently based upon CMOS, is necessary. For this reason, all materials and fabrication technologies are CMOS compatible. The developed and optimized lift-off metallization in combination with electron beam direct writing is a flexible method to fabricate metallization lines with different metals and with a width of 50 nm. The fabricated devices comprise crossbar arrays with a size of 64 × 64 bit and a 30 nm thermally evaporated electrode of a Pt/ Ti double layer. These were examined in te
3d Integration Of Resistive Switching Memory
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Author : Qing Luo
language : en
Publisher: CRC Press
Release Date : 2023-04-13
3d Integration Of Resistive Switching Memory written by Qing Luo and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-04-13 with Technology & Engineering categories.
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Memristors And Memristive Systems
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Author : Ronald Tetzlaff
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-12-11
Memristors And Memristive Systems written by Ronald Tetzlaff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-12-11 with Technology & Engineering categories.
This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.
Thermal Diffusion In Binary Surfactant Systems And Microemulsions
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Author : Bastian Arlt
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2012
Thermal Diffusion In Binary Surfactant Systems And Microemulsions written by Bastian Arlt and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Dc And Rf Characterization Of Nisi Schottky Barrier Mosfets With Dopant Segregation
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Author : Christoph Johannes Urban
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2010
Dc And Rf Characterization Of Nisi Schottky Barrier Mosfets With Dopant Segregation written by Christoph Johannes Urban and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Optical And Electrical Addressing In Moleculebased Logic Circuits
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Author : Marcel Manheller
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2012
Optical And Electrical Addressing In Moleculebased Logic Circuits written by Marcel Manheller and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Zsfassung in dt. u. engl. Sprache
Memristors The Fourth Fundamental Circuit Element Theory Device And Applications
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Author : Yao-Feng Chang
language : en
Publisher: BoD – Books on Demand
Release Date : 2024-06-12
Memristors The Fourth Fundamental Circuit Element Theory Device And Applications written by Yao-Feng Chang and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-06-12 with Technology & Engineering categories.
This book presents excellent comprehensive and interdisciplinary research on memristor devices and their corresponding applications. The authors discuss a wide range of topics, including material and physical modeling, materials physics and analytics, devices in miniature scale, advanced functional circuits, high-speed computing systems and integration for logic applications, other novel emerging device concepts and circuit schemes, and much more.
Memristive Neuromorphics Materials Devices Circuits Architectures Algorithms And Their Co Design
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Author : Huanglong Li
language : en
Publisher: Frontiers Media SA
Release Date : 2022-02-21
Memristive Neuromorphics Materials Devices Circuits Architectures Algorithms And Their Co Design written by Huanglong Li and has been published by Frontiers Media SA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-02-21 with Science categories.
Advances In Non Volatile Memory And Storage Technology
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Author : Yoshio Nishi
language : en
Publisher: Woodhead Publishing
Release Date : 2019-06-15
Advances In Non Volatile Memory And Storage Technology written by Yoshio Nishi and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-15 with Technology & Engineering categories.
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory