Modeling And Electrothermal Simulation Of Sic Mesfets
DOWNLOAD
Download Modeling And Electrothermal Simulation Of Sic Mesfets PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Modeling And Electrothermal Simulation Of Sic Mesfets book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Modeling And Electrothermal Simulation Of Sic Mesfets
DOWNLOAD
Author : Matthias Roschke
language : en
Publisher:
Release Date : 2000
Modeling And Electrothermal Simulation Of Sic Mesfets written by Matthias Roschke and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Silicon Carbide Iii Nitrides And Related Materials
DOWNLOAD
Author : Gerhard Pensl
language : en
Publisher:
Release Date : 1998
Silicon Carbide Iii Nitrides And Related Materials written by Gerhard Pensl and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Crystal growth categories.
Proceedings Of The 1st International Conference On Electronic Engineering And Renewable Energy
DOWNLOAD
Author : Bekkay Hajji
language : en
Publisher: Springer
Release Date : 2018-08-01
Proceedings Of The 1st International Conference On Electronic Engineering And Renewable Energy written by Bekkay Hajji and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-08-01 with Technology & Engineering categories.
The proceedings present a selection of refereed papers presented at the 1st International Conference on Electronic Engineering and Renewable Energy (ICEERE 2018) held during 15-17 April 2018, Saidi, Morocco. The contributions from electrical engineers and experts highlight key issues and developments essential to the multifaceted field of electrical engineering systems and seek to address multidisciplinary challenges in Information and Communication Technologies. The book has a special focus on energy challenges for developing the Euro-Mediterranean regions through new renewable energy technologies in the agricultural and rural areas. The book is intended for academia, including graduate students, experienced researchers and industrial practitioners working in the fields of Electronic Engineering and Renewable Energy.
Nonlinear Transistor Model Parameter Extraction Techniques
DOWNLOAD
Author : Matthias Rudolph
language : en
Publisher: Cambridge University Press
Release Date : 2011-10-13
Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-13 with Technology & Engineering categories.
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Advances In Microelectronics Reviews Vol 2
DOWNLOAD
Author : Sergey Yurish
language : en
Publisher: Lulu.com
Release Date : 2019-02-07
Advances In Microelectronics Reviews Vol 2 written by Sergey Yurish and has been published by Lulu.com this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-02-07 with Technology & Engineering categories.
The 2nd volume of 'Advances in Microelectronics: Reviews' Book Series is written by 57 contributors from academy and industry from 11 countries (Bulgaria, Hungary, Iran, Japan, Malaysia, Romania, Russia, Slovak Republic, Spain, Ukraine and USA). The book contains 13 chapters from different areas of microelectronics: MEMS, materials characterization, and various microelectronic devices. With unique combination of information in each volume, the Book Series will be of value for scientists and engineers in industry and at universities. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Parameter Extraction And Complex Nonlinear Transistor Models
DOWNLOAD
Author : Gunter Kompa
language : en
Publisher: Artech House
Release Date : 2019-12-31
Parameter Extraction And Complex Nonlinear Transistor Models written by Gunter Kompa and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-31 with Technology & Engineering categories.
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Gan Transistor Modeling For Rf And Power Electronics
DOWNLOAD
Author : Yogesh Singh Chauhan
language : en
Publisher: Elsevier
Release Date : 2024-05-20
Gan Transistor Modeling For Rf And Power Electronics written by Yogesh Singh Chauhan and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-20 with Technology & Engineering categories.
GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction
Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas
DOWNLOAD
Author : Bejoy N Pushpakaran
language : en
Publisher: World Scientific
Release Date : 2019-03-22
Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas written by Bejoy N Pushpakaran and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-03-22 with Technology & Engineering categories.
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design
DOWNLOAD
Author : Endalkachew Shewarega Mengistu
language : en
Publisher: kassel university press GmbH
Release Date : 2008
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
International Aerospace Abstracts
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 1999
International Aerospace Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Aeronautics categories.