Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas

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Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas
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Author : Bejoy N Pushpakaran
language : en
Publisher: World Scientific
Release Date : 2019-03-22
Modeling And Electrothermal Simulation Of Sic Power Devices Using Silvaco Atlas written by Bejoy N Pushpakaran and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-03-22 with Technology & Engineering categories.
The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.Related Link(s)
Vertical Gan And Sic Power Devices
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Author : Kazuhiro Mochizuki
language : en
Publisher: Artech House
Release Date : 2018-04-30
Vertical Gan And Sic Power Devices written by Kazuhiro Mochizuki and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-04-30 with Technology & Engineering categories.
This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.
Hemt Technology And Applications
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Author : Trupti Ranjan Lenka
language : en
Publisher: Springer Nature
Release Date : 2022-06-23
Hemt Technology And Applications written by Trupti Ranjan Lenka and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-23 with Technology & Engineering categories.
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Ieee International Reliability Physics Symposium Proceedings
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Author : International Reliability Physics Symposium
language : en
Publisher:
Release Date : 2002
Ieee International Reliability Physics Symposium Proceedings written by International Reliability Physics Symposium and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Electronic apparatus and appliances categories.
Electro Thermal Modeling Of Sic Power Electronic Systems
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Author :
language : en
Publisher:
Release Date : 2007
Electro Thermal Modeling Of Sic Power Electronic Systems written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
As the development of Silicon (Si) semiconductor technology slows down due to its material limitations, more and more attention is being paid to wide bandgap material based semiconductor technology. Silicon Carbide (SiC) has been widely recognized as the material for next generation power electronic devices. However, a great deal of work needs to be done before SiC power devices can be widely applied. This dissertation addresses this need and has conducted research on the modeling of SiC power electronic system. More specifically, a method for system modeling of a SiC power system based on basic physics and device tests is presented here. It includes temperature-dependent single device models specified for system-level modeling, power loss models for power converters, and thermal models for cooling system. The method is verified by experimental results. Furthermore, it is used to study the system impact of SiC power devices in several different applications, which were funded by Small Business Innovation Research (SBIR) and Oak Ridge National Laboratory (ORNL). A conclusion is drawn from these studies that SiC power devices are more suitable for high-power, high-temperature, and high-frequency systems compared to Si ones. Thus, these kinds of systems will be the potential applications of SiC power devices in the near future.
Transient Electro Thermal Modeling On Power Semiconductor Devices
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Author : Tanya Kirilova Gachovska
language : en
Publisher: Springer Nature
Release Date : 2022-06-01
Transient Electro Thermal Modeling On Power Semiconductor Devices written by Tanya Kirilova Gachovska and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-01 with Technology & Engineering categories.
This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Simulation Modeling And Characterization Of Sic Devices
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Author : Liangchun Yu
language : en
Publisher:
Release Date : 2010
Simulation Modeling And Characterization Of Sic Devices written by Liangchun Yu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Metal oxide semiconductor field-effect transistors categories.
With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
Modeling And Electrothermal Simulation Of Sic Mesfets
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Author : Matthias Roschke
language : en
Publisher:
Release Date : 2000
Modeling And Electrothermal Simulation Of Sic Mesfets written by Matthias Roschke and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Modeling And Simulation Of High Speed Semiconductors Used In Gan And Sic Power Converters
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Author : Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters)
language : en
Publisher:
Release Date : 2021
Modeling And Simulation Of High Speed Semiconductors Used In Gan And Sic Power Converters written by Ali Rahimi (Auteur de Modeling and simulation of high speed semiconductors used in GaN and SiC power converters) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
Investigating The Electrothermal Characteristics Of A Gate Turn Off Thyristor During Turn Off Using Silvaco Altas Sic Atlas
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Author :
language : en
Publisher:
Release Date : 2009
Investigating The Electrothermal Characteristics Of A Gate Turn Off Thyristor During Turn Off Using Silvaco Altas Sic Atlas written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Thyristors categories.
This thesis presents data from a simulation study of the thermal and electrical characteristics of a Gate Turn Off (GTO) thyristor. At present, most of the research on GTO thyristors has focused on their use in power electronic systems at high switching frequencies. As a result, the behavior of GTO thyristors at very low switching frequencies is not well understood. Previous research projects have shown experimentally that GTO thyristors are capable of interrupting significantly more than their nominal turn-off current rating when used in pulsed power applications at low switching frequencies. This work demonstrates the use of physics-based computer simulation to study the electrothermal turn-off characteristics of a GTO thyristor at low switching frequencies. The computer model used in this project simulated both the electrical and the thermal characteristics of a GTO thyristor and allowed its internal properties - such as current density, electric fields, and lattice temperature - to be investigated. The model was used to track the generation, transfer, and dissipation of energy within the structure of the device and show that the current interruption capability of a GTO thyristor may depend on its switching frequency due to the thermal energy that is generated and stored in the device during turn-off.