Nanoscale Effects In Junctionless Field Effect Transistors
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Nanoscale Effects In Junctionless Field Effect Transistors
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Author : Abdussamad Ahmed Muntahi
language : en
Publisher:
Release Date : 2018
Nanoscale Effects In Junctionless Field Effect Transistors written by Abdussamad Ahmed Muntahi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Metal semiconductor field-effect transistors categories.
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using nanowires. This work aims to computationally investigate the interplay of quantum size-quantization and random dopant fluctuations (RDF) effects in nanoscale JLFETs. For this purpose, a 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been integrated and used in this work. The size-quantization effect has been accounted for via a parameter-free effective potential scheme and benchmarked against the NEGF approach in the ballistic limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters (energy bandgap, effective masses, and the density-of-states) have been computed using an atomistic 20-band nearest-neighbour sp 3d5s* tight-binding scheme. First, an experimental device was simulated to evaluate the validity of the simulator. Because of the small dimension, quantum mechanical confinement was found to be the dominant mechanism that significantly degrades the current drive capability of nanoscale JLFETs. Surface roughness scattering is not as prominent as observed in conventional MOSFETs. Also, because of its small size, the performance of the device is prone to the effect of variability, for which a discrete doping model was proved essential. Finally, a new JLFET was designed and optimized in this work. The proposed device is based on a gate-all-around silicon nanowire. Source/drain length is 32.5 nm and channel length is 14 nm. Gate contact length is 9 nm. The EOT (equivalent oxide thickness) is 1 nm. It has a metal gate with a workfunction of 4.55 eV. The source, channel and drain regions are n-type with a doping density of 1.5×1019 cm-3. Detailed simulation shows that the two most influential mechanisms that degrade the drive capability are quantum mechanical confinement and Coulomb scattering. Surface roughness scattering is found to be very weak. In addition, thinner nanowire is more prone to Coulomb scattering exhibiting a reduced ON-current (ION). Simulation results show that silicon nanowires with a side length (width and depth) of 3 nm and a doping density of 1.5×1019 cm-3 produce satisfactory drive current.
Fundamentals Of Nanoscaled Field Effect Transistors
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Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23
Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Nanoscale Field Effect Transistors Emerging Applications
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Author : Ekta Goel, Archana Pandey
language : en
Publisher: Bentham Science Publishers
Release Date : 2023-12-20
Nanoscale Field Effect Transistors Emerging Applications written by Ekta Goel, Archana Pandey and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-20 with Technology & Engineering categories.
Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Junctionless Field Effect Transistors
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Author : Shubham Sahay
language : en
Publisher: John Wiley & Sons
Release Date : 2019-01-25
Junctionless Field Effect Transistors written by Shubham Sahay and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-25 with Technology & Engineering categories.
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Nanoscale Semiconductors
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Author : Balwinder Raj
language : en
Publisher: CRC Press
Release Date : 2022-08-30
Nanoscale Semiconductors written by Balwinder Raj and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-08-30 with Technology & Engineering categories.
This reference text discusses conduction mechanism, structure construction, operation, performance evaluation and applications of nanoscale semiconductor materials and devices in VLSI circuits design. The text explains nano materials, devices, analysis of its design parameters to meet the sub-nano-regime challenges for CMOS devices. It discusses important topics including memory design and testing, fin field-effect transistor (FinFET), tunnel field-effect transistor (TFET) for sensors design, carbon nanotube field-effect transistor (CNTFET) for memory design, nanowire and nanoribbons, nano devices based low-power-circuit design, and microelectromechanical systems (MEMS) design. The book discusses nanoscale semiconductor materials, device models, and circuit design covers nanoscale semiconductor device structures and modeling discusses novel nano-semiconductor devices such as FinFET, CNTFET, and Nanowire covers power dissipation and reduction techniques Discussing innovative nanoscale semiconductor device structures and modeling, this text will be useful for graduate students, and academic researchers in diverse areas such as electrical engineering, electronics and communication engineering, nanoscience, and nanotechnology. It covers nano devices based low-power-circuit design, nanoscale devices based digital VLSI circuits, and novel devices based analog VLSI circuits design.
Advanced Nanoscale Mosfet Architectures
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Author : Kalyan Biswas
language : en
Publisher: John Wiley & Sons
Release Date : 2024-05-29
Advanced Nanoscale Mosfet Architectures written by Kalyan Biswas and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-05-29 with Technology & Engineering categories.
Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Carrier Transport In Nanoscale Mos Transistors
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Author : Hideaki Tsuchiya
language : en
Publisher: John Wiley & Sons
Release Date : 2017-06-13
Carrier Transport In Nanoscale Mos Transistors written by Hideaki Tsuchiya and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-06-13 with Technology & Engineering categories.
A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Nanoscale Vlsi
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Author : Rohit Dhiman
language : en
Publisher: Springer Nature
Release Date : 2020-10-03
Nanoscale Vlsi written by Rohit Dhiman and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-10-03 with Technology & Engineering categories.
This book describes methodologies in the design of VLSI devices, circuits and their applications at nanoscale levels. The book begins with the discussion on the dominant role of power dissipation in highly scaled devices.The 15 Chapters of the book are classified under four sections that cover design, modeling, and simulation of electronic, magnetic and compound semiconductors for their applications in VLSI devices, circuits, and systems. This comprehensive volume eloquently presents the design methodologies for ultra–low power VLSI design, potential post–CMOS devices, and their applications from the architectural and system perspectives. The book shall serve as an invaluable reference book for the graduate students, Ph.D./ M.S./ M.Tech. Scholars, researchers, and practicing engineers working in the frontier areas of nanoscale VLSI design.
Major Applications Of Carbon Nanotube Field Effect Transistors Cntfet
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Author : Balwinder Raj
language : en
Publisher: Engineering Science Reference
Release Date : 2019
Major Applications Of Carbon Nanotube Field Effect Transistors Cntfet written by Balwinder Raj and has been published by Engineering Science Reference this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with Carbon nanotubes categories.
"This book explores the methods and applications of converting semiconductor devices from micron technology to nanotechnology. It also examines existing CNTs, CNTFETs, and their applications and examines practical applications to minimize short channel effects and power dissipation in nanoscale devices and circuits" --
Nanoelectronic Devices For Hardware And Software Security
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Author : Arun Kumar Singh
language : en
Publisher: CRC Press
Release Date : 2021-10-31
Nanoelectronic Devices For Hardware And Software Security written by Arun Kumar Singh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-31 with Technology & Engineering categories.
Nanoelectronic Devices for Hardware and Software Security has comprehensive coverage of the principles, basic concepts, structure, modeling, practices, and circuit applications of nanoelectronics in hardware/software security. It also covers the future research directions in this domain. In this evolving era, nanotechnology is converting semiconductor devices dimensions from micron technology to nanotechnology. Nanoelectronics would be the key enabler for innovation in nanoscale devices, circuits, and systems. The motive for this research book is to provide relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology for hardware/software security. There are numerous challenges in the development of models for nanoscale devices (e.g., FinFET, gate-all-around devices, TFET, etc.), short channel effects, fringing effects, high leakage current, and power dissipation, among others. This book will help to identify areas where there are challenges and apply nanodevice and circuit techniques to address hardware/software security issues.