Novel Applications Of Gainp To Gaas Based Heterojunction Bipolar Transistors Hbts
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Novel Applications Of Gainp To Gaas Based Heterojunction Bipolar Transistors Hbts
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Author : Shyh-Liang Fu
language : en
Publisher:
Release Date : 1996
Novel Applications Of Gainp To Gaas Based Heterojunction Bipolar Transistors Hbts written by Shyh-Liang Fu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
Current Trends In Heterojunction Bipolar Transistors
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Author : M F Chang
language : en
Publisher: World Scientific
Release Date : 1996-01-29
Current Trends In Heterojunction Bipolar Transistors written by M F Chang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-29 with Technology & Engineering categories.
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation
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Author : Xiang Liu
language : en
Publisher:
Release Date : 2011
Reliability Study Of Ingap Gaas Heterojunction Bipolar Transistor Mmic Technology By Characterization Modeling And Simulation written by Xiang Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Bipolar transistors categories.
Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Investigation Of Inp And Gaas Based Heterojunction Bipolar Transistors Hbts
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Author : 陳梓斌
language : en
Publisher:
Release Date : 2009
Investigation Of Inp And Gaas Based Heterojunction Bipolar Transistors Hbts written by 陳梓斌 and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications
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Author : Pin-Fan Chen
language : en
Publisher:
Release Date : 2001
Investigation Of Gainp Gaas Double Heterojunction Bipolar Transistors For Microwave Power Amplifier Applications written by Pin-Fan Chen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Improved Hbt Performance By Base Width Reduction And Selective Extrinsic Base Regrowth
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Author : Yue-ming Hsin
language : en
Publisher:
Release Date : 1997
Improved Hbt Performance By Base Width Reduction And Selective Extrinsic Base Regrowth written by Yue-ming Hsin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2000
Characteristics Of Novel Ingaasn Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with categories.
Gaas Based Epitaxial Structures For Heterojunction Bipolar Transistors With Increased Efficiency
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Author : Rebecca Jane Welty
language : en
Publisher:
Release Date : 2002
Gaas Based Epitaxial Structures For Heterojunction Bipolar Transistors With Increased Efficiency written by Rebecca Jane Welty and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
The Rf And Microwave Handbook 3 Volume Set
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Author : Mike Golio
language : en
Publisher: CRC Press
Release Date : 2018-10-08
The Rf And Microwave Handbook 3 Volume Set written by Mike Golio and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-08 with Technology & Engineering categories.
By 1990 the wireless revolution had begun. In late 2000, Mike Golio gave the world a significant tool to use in this revolution: The RF and Microwave Handbook. Since then, wireless technology spread across the globe with unprecedented speed, fueled by 3G and 4G mobile technology and the proliferation of wireless LANs. Updated to reflect this tremendous growth, the second edition of this widely embraced, bestselling handbook divides its coverage conveniently into a set of three books, each focused on a particular aspect of the technology. Six new chapters cover WiMAX, broadband cable, bit error ratio (BER) testing, high-power PAs (power amplifiers), heterojunction bipolar transistors (HBTs), as well as an overview of microwave engineering. Over 100 contributors, with diverse backgrounds in academic, industrial, government, manufacturing, design, and research reflect the breadth and depth of the field. This eclectic mix of contributors ensures that the coverage balances fundamental technical issues with the important business and marketing constraints that define commercial RF and microwave engineering. Focused chapters filled with formulas, charts, graphs, diagrams, and tables make the information easy to locate and apply to practical cases. The new format, three tightly focused volumes, provides not only increased information but also ease of use. You can find the information you need quickly, without wading through material you don’t immediately need, giving you access to the caliber of data you have come to expect in a much more user-friendly format.
Fabrication And Modeling Of Ingap Gaas Heterojunction Bipolar Transistor
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Author : Sung-Jin Ho
language : en
Publisher:
Release Date : 2007
Fabrication And Modeling Of Ingap Gaas Heterojunction Bipolar Transistor written by Sung-Jin Ho and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.