Novel Materials And Processes For Advanced Cmos Volume 745
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Novel Materials And Processes For Advanced Cmos Volume 745
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Author : Mark I. Gardner
language : en
Publisher:
Release Date : 2003-03-25
Novel Materials And Processes For Advanced Cmos Volume 745 written by Mark I. Gardner and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-03-25 with Computers categories.
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Cmos Front End Materials And Process Technology Volume 765
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003-09-12
Cmos Front End Materials And Process Technology Volume 765 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-09-12 with Computers categories.
In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.
Physics And Technology Of High K Gate Dielectrics 4
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Author : Samares Kar
language : en
Publisher: The Electrochemical Society
Release Date : 2006
Physics And Technology Of High K Gate Dielectrics 4 written by Samares Kar and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Science categories.
This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Proceedings Of The International Symposium On The Physical Failure Analysis Of Integrated Circuits
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Author :
language : en
Publisher:
Release Date : 2004
Proceedings Of The International Symposium On The Physical Failure Analysis Of Integrated Circuits written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Integrated circuits categories.
Nano Cmos Gate Dielectric Engineering
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Author : Hei Wong
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Nano Cmos Gate Dielectric Engineering written by Hei Wong and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.
Magnetoelectronics And Magnetic Materials Novel Phenomena And Advanced Characterization Volume 746
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Author : Shufeng Zhang
language : en
Publisher:
Release Date : 2003-04
Magnetoelectronics And Magnetic Materials Novel Phenomena And Advanced Characterization Volume 746 written by Shufeng Zhang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-04 with Technology & Engineering categories.
This book combines the proceedings of Symposium Q, Magnetoelectronics-Novel Magnetic Phenomena in Nanostructures, and Symposium R, Advanced Characterization of Artificially Structured Magnetic Materials, both from the 2002 MRS Fall Meeting in Boston. The common focus is on artificially engineered nanostructured magnetic systems. The two symposia address new phenomena in magnetoelectronic applications, their preparation, and advanced methodology for characterization. Interest in nanomagnetism has been catalyzed by advances in two fields of research. 1) Advances in materials synthesis of structures whose length scales transcend magnetic length scales and open the possibility for creating materials with new magnetic properties. Such structures include interfaces, superlattices, tunneling devices, nanostructures, and single-molecule magnets. 2) Advances in sample characterization techniques for nano-magnetism which allow detailed exploration of structure-property relationships in nanostructured magnetic systems. The volume highlights current trends in both fields and offers an outlook for further advances and new capabilities.
Physics And Technology Of High K Gate Dielectrics 5
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Author : Samares Kar
language : en
Publisher: The Electrochemical Society
Release Date : 2007
Physics And Technology Of High K Gate Dielectrics 5 written by Samares Kar and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.
This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Advanced Optical Processing Of Materials
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003
Advanced Optical Processing Of Materials written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
Since the inauguration of the MRS symposium series on advanced optical processing of materials back in 1990, the number of optical-based techniques applied to process materials and the capabilities of optical systems has continued to expand and improve beyond simple pulsed-laser deposition of thin films. In turn, the scope of materials being investigated has also increased from oxide ceramics to include alloys, polymers and bio-materials. Many of the most exciting areas presented in this interdisciplinary forum include current and future applications in engineering materials at the mesoscopic-to-nanometer scale, optoelectronics, biomaterials, sensors and electronics. Advanced optical processing of materials now includes laser interactions with materials that are specially designed to optimize the beneficial qualities of laser modification. However, femtosecond processing of materials emerged as the dominant theme this year and several papers on this topic are featured. Another hot topic is one connected with biomedical applications--the controlled delivery of drugs to increase their efficacy by coating a fluidized bed of drug powders with biodegradable polymers was realized by conventional pulsed-laser deposition (PLD) and matrix assisted pulsed-laser evaporation (MAPLE) or by microencapsulation.
Physics And Technology Of High K Gate Dielectrics Ii
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Author : Samares Kar
language : en
Publisher: The Electrochemical Society
Release Date : 2004
Physics And Technology Of High K Gate Dielectrics Ii written by Samares Kar and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
"This volume is the proceedings of The Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ... and was held during [the] 204th Meeting [of the Electrochemical Society] ..."--P. v.
Gan And Related Alloys 2002 Volume 743
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003-06-02
Gan And Related Alloys 2002 Volume 743 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-06-02 with Science categories.
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.