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Planar Double Gate Transistor


Planar Double Gate Transistor
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Planar Double Gate Transistor


Planar Double Gate Transistor
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Author : Amara Amara
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-01-16

Planar Double Gate Transistor written by Amara Amara and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-01-16 with Technology & Engineering categories.


Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.



Planar Double Gate Transistor


Planar Double Gate Transistor
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Author : Amara Amara
language : en
Publisher: Springer
Release Date : 2009-08-29

Planar Double Gate Transistor written by Amara Amara and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-08-29 with Technology & Engineering categories.


Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.



Modelling And Simulation Of Nanoscale Non Planar Double Gate Metal Oxide Semiconductor Field Effect Transistor


Modelling And Simulation Of Nanoscale Non Planar Double Gate Metal Oxide Semiconductor Field Effect Transistor
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Author : Munawar Agus Riyadi
language : en
Publisher:
Release Date : 2012

Modelling And Simulation Of Nanoscale Non Planar Double Gate Metal Oxide Semiconductor Field Effect Transistor written by Munawar Agus Riyadi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Nanoelectromechanical systems categories.




Case Studies On Variation Tolerant And Low Power Design Using Planar Asymmetric Double Gate Transistor


Case Studies On Variation Tolerant And Low Power Design Using Planar Asymmetric Double Gate Transistor
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Author : Amrinder Singh
language : en
Publisher:
Release Date : 2011

Case Studies On Variation Tolerant And Low Power Design Using Planar Asymmetric Double Gate Transistor written by Amrinder Singh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.


In nanometer technologies, process variation control and low power have emerged as the first order design goal after high performance. Process variations cause high variability in performance and power consumption of an IC, which affects the overall yield. Short channel effects (SCEs) deteriorate the MOSFET performance and lead to higher leakage power. Double gate devices suppress SCEs and are potential candidates for replacing Bulk technology in nanometer nodes. Threshold voltage control in planar asymmetric double gate transistor (IGFET) using a fourth terminal provides an effective means of combating process variations and low power design. In this thesis, using various case studies, we analyzed the suitability of IGFET for variation control and low power design. We also performed an extensive comparison between IGFET and Bulk for reducing variability, improving yield and leakage power reduction using power gating. We also proposed a new circuit topology for IGFET, which on average shows 33.8 percent lower leakage and 34.9 percent lower area at the cost of 2.8 percent increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized devices designed using new circuit topology for IGFET.



Finfets And Other Multi Gate Transistors


Finfets And Other Multi Gate Transistors
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Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2008

Finfets And Other Multi Gate Transistors written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.


This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.



Semiconductor Wafer Bonding 9 Science Technology And Applications


Semiconductor Wafer Bonding 9 Science Technology And Applications
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Author : Helmut Baumgart
language : en
Publisher: The Electrochemical Society
Release Date : 2006

Semiconductor Wafer Bonding 9 Science Technology And Applications written by Helmut Baumgart and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Microelectromechanical systems categories.


This issue of ECS Transactions covers state-of-the-art R&D results of the last 1.5 years in the field of semiconductor wafer bonding technology. Wafer Bonding Technology can be used to create novel composite materials systems and devices what would otherwise be unattainable. Wafer bonding today is rapidly expanding applications in such diverse fields as photonics, sensors, MEMS, X-ray optics, non-electronic microstructures, high performance CMOS platforms for high end servers, Si-Ge, strained SOI, Germanium-on-Insulator (GeOI), and Nanotechnologies.



Power Management In Mobile Devices


Power Management In Mobile Devices
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Author : Findlay Shearer
language : en
Publisher: Elsevier
Release Date : 2011-04-01

Power Management In Mobile Devices written by Findlay Shearer and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-04-01 with Technology & Engineering categories.


Sealed Lead Acid...Nickel Cadmium...Lithium Ion...How do you balance battery life with performance and cost?This book shows you how!Now that "mobile" has become the standard, the consumer not only expects mobility but demands power longevity in wireless devices. As more and more features, computing power, and memory are packed into mobile devices such as iPods, cell phones, and cameras, there is a large and growing gap between what devices can do and the amount of energy engineers can deliver. In fact, the main limiting factor in many portable designs is not hardware or software, but instead how much power can be delivered to the device. This book describes various design approaches to reduce the amount of power a circuit consumes and techniques to effectively manage the available power.Power Management Advice On:•Low Power Packaging Techniques•Power and Clock Gating•Energy Efficient Compilers•Various Display Technologies•Linear vs. Switched Regulators•Software Techniques and Intelligent Algorithms * Addresses power versus performance that each newly developed mobile device faces* Robust case studies drawn from the author's 30 plus years of extensive real world experience are included* Both hardware and software are discussed concerning their roles in power



Electronic Devices Architectures For The Nano Cmos Era


Electronic Devices Architectures For The Nano Cmos Era
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Author : Simon Deleonibus
language : en
Publisher: CRC Press
Release Date : 2019-05-08

Electronic Devices Architectures For The Nano Cmos Era written by Simon Deleonibus and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-08 with Technology & Engineering categories.


In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.



Silicon


Silicon
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Author : Paul Siffert
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09

Silicon written by Paul Siffert and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.


With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.



Semiconductor Wafer Bonding Viii Science Technology And Applications


Semiconductor Wafer Bonding Viii Science Technology And Applications
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Author :
language : en
Publisher: The Electrochemical Society
Release Date : 2005

Semiconductor Wafer Bonding Viii Science Technology And Applications written by and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Microelectromechanical systems categories.