Process Technology For Silicon Carbide Devices
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Process Technology For Silicon Carbide Devices
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Author : Carl-Mikael Zetterling
language : en
Publisher: IET
Release Date : 2002
Process Technology For Silicon Carbide Devices written by Carl-Mikael Zetterling and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.
This book explains why SiC is so useful in electronics, gives clear guidance on the various processing steps (growth, doping, etching, contact formation, dielectrics etc) and describes how these are integrated in device manufacture.
Advancing Silicon Carbide Electronics Technology Ii
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Author : Konstantinos Zekentes
language : en
Publisher: Materials Research Forum LLC
Release Date : 2020-03-15
Advancing Silicon Carbide Electronics Technology Ii written by Konstantinos Zekentes and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-15 with Technology & Engineering categories.
The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).
Advances In Silicon Carbide Processing And Applications
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Author : Stephen E. Saddow
language : en
Publisher: Artech House
Release Date : 2004
Advances In Silicon Carbide Processing And Applications written by Stephen E. Saddow and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Physics And Technology Of Silicon Carbide Devices
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Author : George Gibbs
language : en
Publisher:
Release Date : 2016-10-01
Physics And Technology Of Silicon Carbide Devices written by George Gibbs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-01 with categories.
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Advanced Silicon Carbide Devices And Processing
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Author : Stephen Saddow
language : en
Publisher: BoD – Books on Demand
Release Date : 2015-09-17
Advanced Silicon Carbide Devices And Processing written by Stephen Saddow and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-09-17 with Technology & Engineering categories.
Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Silicon Carbide Devices And Technology
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Author : Bill Fraley
language : en
Publisher:
Release Date : 2015-03-31
Silicon Carbide Devices And Technology written by Bill Fraley and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-03-31 with Silicon carbide categories.
This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC¡) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.
Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-11-24
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-24 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Advancing Silicon Carbide Electronics Technology I
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Author : Konstantinos Zekentes
language : en
Publisher: Materials Research Forum LLC
Release Date : 2018-09-25
Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-25 with Technology & Engineering categories.
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
Sic Materials And Devices Volume 1
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Author : Sergey Rumyantsev
language : en
Publisher: World Scientific
Release Date : 2006-07-25
Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-07-25 with Technology & Engineering categories.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Silicon Carbide Microsystems For Harsh Environments
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Author : Muthu Wijesundara
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-05-17
Silicon Carbide Microsystems For Harsh Environments written by Muthu Wijesundara and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-05-17 with Technology & Engineering categories.
Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.