Resistive Switching
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Resistive Switching
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Author : Daniele Ielmini
language : en
Publisher: John Wiley & Sons
Release Date : 2015-12-23
Resistive Switching written by Daniele Ielmini and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-12-23 with Technology & Engineering categories.
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Resistive Switching Oxide Materials Mechanisms Devices And Operations
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Author : Jennifer Rupp
language : en
Publisher: Springer Nature
Release Date : 2021-10-15
Resistive Switching Oxide Materials Mechanisms Devices And Operations written by Jennifer Rupp and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-15 with Technology & Engineering categories.
This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.
Resistive Switching In Zro2 Based Metal Oxide Metal Structures
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Author : Irina Kärkkänen
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Resistive Switching In Zro2 Based Metal Oxide Metal Structures written by Irina Kärkkänen and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Resistive Switching In Tio2 Thin Films
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Author : Lin Yang
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2011
Resistive Switching In Tio2 Thin Films written by Lin Yang and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Resistive Switching In Pt Tio2 Pt
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Author : Doo Seok Jeong
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2009
Resistive Switching In Pt Tio2 Pt written by Doo Seok Jeong and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Resistive Switching Phenomena Of Extended Defects In Nb Doped Srtio3 Under Influence Of External Gradients
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Author : Christian Rodenbücher
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Resistive Switching Phenomena Of Extended Defects In Nb Doped Srtio3 Under Influence Of External Gradients written by Christian Rodenbücher and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Emerging Resistive Switching Memories
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Author : Jianyong Ouyang
language : en
Publisher: Springer
Release Date : 2016-07-04
Emerging Resistive Switching Memories written by Jianyong Ouyang and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-07-04 with Technology & Engineering categories.
This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
3d Integration Of Resistive Switching Memory
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Author : Qing Luo
language : en
Publisher: CRC Press
Release Date : 2023-04-13
3d Integration Of Resistive Switching Memory written by Qing Luo and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-04-13 with Technology & Engineering categories.
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Investigation Of Resistive Switching In Barium Strontium Titanate Thin Films For Memory Applications
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Author : Wan Shen
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2010
Investigation Of Resistive Switching In Barium Strontium Titanate Thin Films For Memory Applications written by Wan Shen and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
Nanoscale Semiconductor Memories
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Author : Santosh K. Kurinec
language : en
Publisher: CRC Press
Release Date : 2017-07-28
Nanoscale Semiconductor Memories written by Santosh K. Kurinec and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-28 with Technology & Engineering categories.
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.