Semiconductor Device Modeling For Vlsi
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Semiconductor Device Modeling For Vlsi
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Author : Rachel Lee
language : en
Publisher:
Release Date : 1993-08
Semiconductor Device Modeling For Vlsi written by Rachel Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-08 with categories.
Semiconductor Device Modeling For Vlsi
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Author : Kwyro Lee
language : en
Publisher:
Release Date : 1993-01-01
Semiconductor Device Modeling For Vlsi written by Kwyro Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Technology & Engineering categories.
Explains basic semiconductor physics, and looks at bipolar junction, metal oxide semiconductor field effect, and compound semiconductor field effect transistors, thin film transistors, and circuit simulation
Mosfet Modeling For Vlsi Simulation
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Author : Narain Arora
language : en
Publisher: World Scientific
Release Date : 2007
Mosfet Modeling For Vlsi Simulation written by Narain Arora and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Analysis And Simulation Of Semiconductor Devices
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Author : S. Selberherr
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Analysis And Simulation Of Semiconductor Devices written by S. Selberherr and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Mosfet Models For Vlsi Circuit Simulation
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Author : Narain D. Arora
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Mosfet Models For Vlsi Circuit Simulation written by Narain D. Arora and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Semiconductor Device Modeling With Spice
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Author : Giuseppe Massabrio
language : en
Publisher: McGraw Hill Professional
Release Date : 1998-12-22
Semiconductor Device Modeling With Spice written by Giuseppe Massabrio and has been published by McGraw Hill Professional this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-12-22 with Technology & Engineering categories.
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Process And Device Modeling
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Author : Walter L. Engl
language : en
Publisher: North Holland
Release Date : 1986
Process And Device Modeling written by Walter L. Engl and has been published by North Holland this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Circuitos electrónicos categories.
This book is the first of a new, seven volume series which aims to provide a comprehensive description of basic methods and technologies related to CAD for VLSI. The series includes up-to-date results and latest developments, with a good balance between theoretical and practical aspects of VLSI design. In this volume emphasis is placed on the basics of modeling, the opening chapters being devoted to fundamental process and device modeling. The following chapters cover different aspects of device modeling and also bridge to process simulation on the one side, and circuit simulation on the other. A systems approach to physical modeling, spanning the whole range of topics covered, is also dealt with. Recent conferences on the subject have signalled that physical modeling combined with technology, device and circuit optimization, will undoubtedly become a major trend in the future.
Introduction To Device Modeling And Circuit Simulation
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Author : Tor A. Fjeldly
language : en
Publisher: Wiley-Interscience
Release Date : 1998
Introduction To Device Modeling And Circuit Simulation written by Tor A. Fjeldly and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Computers categories.
This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
Computational Aspects Of Vlsi Design With An Emphasis On Semiconductor Device Simulation
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Author : Randolph E. Bank
language : en
Publisher: American Mathematical Soc.
Release Date : 1990
Computational Aspects Of Vlsi Design With An Emphasis On Semiconductor Device Simulation written by Randolph E. Bank and has been published by American Mathematical Soc. this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with Computers categories.
Numerical simulation is rapidly becoming an important part of the VLSI design process, allowing the engineer to test, evaluate, and optimize various aspects of chip design without resorting to the costly and time-consuming process of fabricating prototypes. This procedure not only accelerates the design process, but also improves the end product, since it is economically feasible to numerically simulate many more options than might otherwise be considered. With the enhanced computing power of today's computers, more sophisticated models are now being developed.
Bipolar Transistor And Mosfet Device Models
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Author : Kunihiro Suzuki
language : en
Publisher: Bentham Science Publishers
Release Date : 2016-03-02
Bipolar Transistor And Mosfet Device Models written by Kunihiro Suzuki and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-02 with Science categories.
Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.