Semiconductor Process And Device Performance Modelling Volume 490


Semiconductor Process And Device Performance Modelling Volume 490
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Semiconductor Process And Device Performance Modelling


Semiconductor Process And Device Performance Modelling
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Author : Scott T. Dunham
language : en
Publisher: Cambridge University Press
Release Date : 2014-06-05

Semiconductor Process And Device Performance Modelling written by Scott T. Dunham and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-06-05 with Technology & Engineering categories.


The concept of a 'virtual semiconductor fab' requires a focused effort among engineering, physics, chemistry, materials, mathematical and computational sciences. Although widely used by the semiconductor industry, current technology computer-aided design (TCAD) struggles to keep pace with new generations of IC technology. The semiconductor industry needs improved, predictive physically-based modelling and simulation capabilities to decrease cost, improve efficiency, and provide TCAD tools to process developers before production begins. Without the use of more advanced next generation TCAD models, future IC technology development will slow as a result of expensive, time-consuming experimental validation of processes and device performance. This book brings together researchers from industry, universities and national laboratories to highlight advances in TCAD, and to identify critical areas for future emphasis. Both silicon and compound semiconductor process and device performance modelling are featured. Topics include: bulk process modelling; equipment modelling; topography modelling; and characterization and device modelling.



Semiconductor Process And Device Performance Modelling Volume 490


Semiconductor Process And Device Performance Modelling Volume 490
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Author : Scott T. Dunham
language : en
Publisher:
Release Date : 1998-10-02

Semiconductor Process And Device Performance Modelling Volume 490 written by Scott T. Dunham and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-02 with Technology & Engineering categories.


Highlights recent advances in technology computer-aided design (TCAD) and identifies critical areas for future emphasis. The 39 contributions from the December 1997 symposium cover four main topics--bulk process modeling, equipment modeling, topography modeling, and characterization and device modeling. Paper topics include arsenic deactivation in silicon; defect reactions induced by reactive ion etching; optimization of AMT barrel reactors for silicon epitaxy; grain structure evolution and the reliability of Al(Cu) thin film interconnects; and improved quantitative mobility spectrum analysis. Annotation copyrighted by Book News, Inc., Portland, OR



Cvd Xv


Cvd Xv
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Author : Mark Donald Allendorf
language : en
Publisher: The Electrochemical Society
Release Date : 2000

Cvd Xv written by Mark Donald Allendorf and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.




Intrinsic Point Defects Impurities And Their Diffusion In Silicon


Intrinsic Point Defects Impurities And Their Diffusion In Silicon
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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.



Essderc 98


Essderc 98
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Author :
language : en
Publisher: Atlantica Séguier Frontières
Release Date : 1998

Essderc 98 written by and has been published by Atlantica Séguier Frontières this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.




Silicon Front End Technology Materials Processing And Modelling


Silicon Front End Technology Materials Processing And Modelling
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Author : Nicholas E. B. Cowern
language : en
Publisher:
Release Date : 1998

Silicon Front End Technology Materials Processing And Modelling written by Nicholas E. B. Cowern and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductor doping categories.




Advanced Metallization Conference In


Advanced Metallization Conference In
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Author :
language : en
Publisher:
Release Date : 2004

Advanced Metallization Conference In written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Integrated circuits categories.




Sic Materials And Devices Volume 1


Sic Materials And Devices Volume 1
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Author : Sergey Rumyantsev
language : en
Publisher: World Scientific
Release Date : 2006-07-25

Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-07-25 with Technology & Engineering categories.


After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.



Atomistic Mechanisms In Beam Synthesis And Irradiation Of Materials Volume 504


Atomistic Mechanisms In Beam Synthesis And Irradiation Of Materials Volume 504
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Author :
language : en
Publisher: Mrs Proceedings
Release Date : 1999-03

Atomistic Mechanisms In Beam Synthesis And Irradiation Of Materials Volume 504 written by and has been published by Mrs Proceedings this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-03 with Science categories.


Some 70 papers focus on atomistic processes that occur in metals, ceramics and glasses, and polymers exposed to energetic beams in order to synthesize or modify a material. Sections also explore defects and modelling, energetic particle synthesis and mechanical properties, and optical materials and nanoclusters. The invited papers cover defect evolution in ion-implanted Silicon from point to extended defects, achievements of the Japanese government and university projects in ion and laser beam technology, forming metastable materials by ion-beam-assisted deposition and its application to metal clusters in ceramic matrices, and the mesoscale engineering of nanocomposite nonlinear optical materials. Annotation copyrighted by Book News, Inc., Portland, OR



Index Of Conference Proceedings


Index Of Conference Proceedings
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Author : British Library. Document Supply Centre
language : en
Publisher:
Release Date : 1999

Index Of Conference Proceedings written by British Library. Document Supply Centre and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Conference proceedings categories.