Silicon Carbide For Semiconductors
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Silicon Carbide For Semiconductors
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Author : Gus J. Caras
language : en
Publisher:
Release Date : 1965
Silicon Carbide For Semiconductors written by Gus J. Caras and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1965 with Semiconductors categories.
Advances In Silicon Carbide Processing And Applications
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Author : Stephen E. Saddow
language : en
Publisher: Artech House
Release Date : 2004
Advances In Silicon Carbide Processing And Applications written by Stephen E. Saddow and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Silicon Carbide Power Devices
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Author : B. Jayant Baliga
language : en
Publisher: World Scientific
Release Date : 2005
Silicon Carbide Power Devices written by B. Jayant Baliga and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Sic Materials And Devices Volume 1
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Author : Sergey Rumyantsev
language : en
Publisher: World Scientific
Release Date : 2006-07-25
Sic Materials And Devices Volume 1 written by Sergey Rumyantsev and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-07-25 with Technology & Engineering categories.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-11-24
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-24 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Silicon Carbide A High Temperature Semiconductor
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Author : Joseph R. O'Connor
language : en
Publisher:
Release Date : 1960
Silicon Carbide A High Temperature Semiconductor written by Joseph R. O'Connor and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1960 with Semiconductors categories.
Semiconductors Silicon Carbide And Related Materials
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Author : Min Lu
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2019-05-17
Semiconductors Silicon Carbide And Related Materials written by Min Lu and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-17 with Technology & Engineering categories.
Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China
Radiation Effects In Silicon Carbide
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Author : A.A. Lebedev
language : en
Publisher: Materials Research Forum LLC
Release Date :
Radiation Effects In Silicon Carbide written by A.A. Lebedev and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on with Technology & Engineering categories.
The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Physics And Technology Of Silicon Carbide Devices
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Author : George Gibbs
language : en
Publisher:
Release Date : 2016-10-01
Physics And Technology Of Silicon Carbide Devices written by George Gibbs and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-01 with categories.
Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Properties Of Silicon Carbide
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Author : Gary Lynn Harris
language : en
Publisher: IET
Release Date : 1995
Properties Of Silicon Carbide written by Gary Lynn Harris and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Electronic books categories.
This well structured and fully indexed book helps to understand and fully characterize the SiC system.