Silicon Surfaces And Formation Of Interfaces

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Silicon Surfaces And Formation Of Interfaces Basic Science In The Industrial World

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Author : Jarek Dabrowski
language : en
Publisher: World Scientific
Release Date : 2000-05-25

Silicon Surfaces And Formation Of Interfaces Basic Science In The Industrial World written by Jarek Dabrowski and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-05-25 with Science categories.

Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references are numerous and organized in tables, allowing a search without the need to browse through the text.Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

Silicon Surfaces And Formation Of Interfaces

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Author : Jarek Dabrowski
language : en
Publisher: World Scientific
Release Date : 2000

Silicon Surfaces And Formation Of Interfaces written by Jarek Dabrowski and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.

Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.

The Formation Of Lead Silicon Interfaces Determined By Surface X Ray Diffraction

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Author : Kevin Andrew Edwards
language : en
Publisher:
Release Date : 1996

The Formation Of Lead Silicon Interfaces Determined By Surface X Ray Diffraction written by Kevin Andrew Edwards and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.

Semiconductor Surfaces And Interfaces

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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09

Semiconductor Surfaces And Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces to the general aspects of space-charge layers, of clean-surface and adatom-induced surface states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, resutls of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.

Ion Scattering Studies Of Silicon Surfaces And Interfaces Structure And Neutralization

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Author : Richard A. Haight
language : en
Publisher:
Release Date : 1984

Ion Scattering Studies Of Silicon Surfaces And Interfaces Structure And Neutralization written by Richard A. Haight and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.

Physics And Chemistry Of Interfaces

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Author : Hans-Jürgen Butt
language : en
Publisher: John Wiley & Sons
Release Date : 2023-05-08

Physics And Chemistry Of Interfaces written by Hans-Jürgen Butt and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-05-08 with Science categories.

Comprehensive textbook on the interdisciplinary field of interface science, fully updated with new content on spectroscopy, nonlinear effects, and coatings Physics and Chemistry of Interfaces provides a comprehensive introduction to the field of surface and interface science, focusing on essential concepts rather than specific details, and on intuitive understanding rather than convoluted math. Numerous high-end applications from surface technology, biotechnology, and microelectronics are included to illustrate and help readers easily comprehend basic concepts. The new edition contains an increased number of problems with detailed, worked solutions, making it ideal as a self-study resource. In topic coverage, the highly qualified authors take a balanced approach, discussing advanced interface phenomena in detail while remaining comprehensible. Chapter summaries with the most important equations, facts, and phenomena are included to aid the reader in information retention. A few of the sample topics included in Physics and Chemistry of Interfaces are as follows: Liquid surfaces, covering microscopic picture of a liquid surface, surface tension, the equation of Young and Laplace, and curved liquid surfaces Thermodynamics of interfaces, covering surface excess, internal energy and Helmholtz energy, equilibrium conditions, and interfacial excess energies Charged interfaces and the electric double layer, covering planar surfaces, the Grahame equation, and limitations of the Poisson-Boltzmann theory Surface forces, covering Van der Waals forces between molecules, macroscopic calculations, the Derjaguin approximation, and disjoining pressure Physics and Chemistry of Interfaces is a complete reference on the subject, aimed at advanced students (and their instructors) in physics, material science, chemistry, and engineering. Researchers requiring background knowledge on surface and interface science will also benefit from the accessible yet in-depth coverage of the text.

Frontiers In Surface Science And Interface Science

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Author : C.B. Duke
language : en
Publisher: Gulf Professional Publishing
Release Date : 2002-05-21

Frontiers In Surface Science And Interface Science written by C.B. Duke and has been published by Gulf Professional Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-05-21 with Science categories.

Any notion that surface science is all about semiconductors and coatings is laid to rest by this encyclopedic publication: Bioengineered interfaces in medicine, interstellar dust, DNA computation, conducting polymers, the surfaces of atomic nuclei - all are brought up to date. Frontiers in Surface and Interface Science - a milestone publication deserving a wide readership. It combines a sweeping expert survey of research today with an educated look into the future. It is a future that embraces surface phenomena on scales from the subatomic to the galactic, as well as traditional topics like semiconductor design, catalysis, and surface processing, modeling and characterization. And, great efforts have been made to express sophisticated ideas in an attractive and accessible way. Nanotechnology, surfaces for DNA computation, polymer-based electronics, soft surfaces, interstellar surface chemistry - all feature in this comprehensive collection.

Surfaces And Interfaces In Ceramic And Ceramic Metal Systems

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Author : Joseph Pask
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Surfaces And Interfaces In Ceramic And Ceramic Metal Systems written by Joseph Pask and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

The 17th University Conference on Ceramics, which also was the 7th LBL/MMRD International Materials Symposium, was held on the campus of the University of California at Berkeley from July 28 to August 1, 1980. It was devoted to the subject of surfaces and interfaces in ceramic and ceramic-metal systems. The program was timely and of great interest, as indicated by the large number of contributed papers, which included contributions from ten foreign countries. These proceedings are divided into the following categories dealing with the chemistry and physics of interfaces: calculations of interface/surface states, characterization of surfaces and inter faces, thermodynamics of interfaces, influence of surface and inter faces on selected ceramic processes, grain boundary structures, effects of grain boundaries on deformation and fracture, interfacial phenomena, formation of interfaces, development of adhesion, and reactions at interfaces. A number of papers deal specifically with the Si-Si02 interface, which probably has received more attention than any other because of its importance in the electronics industry. This coverage fulfills the principal objective of the symposium which was to explore and assess the current fundamental understand ing of interfaces and surfaces. A parallel objective of the symposium was fulfilled by a group of papers dealing with the correlation of interfacial characteris tics with mechanical behavior. This group includes papers dealing with the adherence of dissimilar materials at interfaces.

Surfaces And Interfaces Physics And Electronics

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Author : R.S. Bauer
language : en
Publisher: Elsevier
Release Date : 2012-12-02

Surfaces And Interfaces Physics And Electronics written by R.S. Bauer and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Science categories.

Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Studies Of The Growth Of Silicon And Germanium Overlayers

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Author : Deng-Sung Lin
language : en
Publisher:
Release Date : 1994

Studies Of The Growth Of Silicon And Germanium Overlayers written by Deng-Sung Lin and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with categories.

Surface reconstruction, atomic charge transfer, step formation, atomic structure and defects on the clean Si and Ge surfaces and the grown Si-on-Ge and Ge-on-Si overlayers were systematically studied. Adsorption mechanisms, surface species, chemical reactions, atomic composition and ordering, and film morphology during the growth using molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE) were thoroughly investigated. In these studies, detailed atomistic descriptions of crystal growth by MBE and VPE were obtained by utilizing high resolution core-level photoemission with synchrotron radiation, electron diffraction, and scanning tunneling microscopy. The dimer bond ionicities of Si and Ge(100)-(2 x 1) surfaces were examined by means of epitaxial growth of Ge on Si(100)-(2 x 1). The MBE growth technique allows replacing the top Si layers layerwise by Ge. After substituting Ge for the top Si dimer layer, we can obtain the core-level line shape for the Ge dimer layer without the interference from bulk Ge emission and the core-level line shape for Si emission without the top dimer layer contribution. The results clarify the charge asymmetry of the two dimer atoms. Subsurface core-level shifts were also identified. The growth of Si on Ge(100)-(2 x 1) and Ge(111)-c(2 x 8) via MBE was explored with high resolution core-level spectroscopy and STM. By monitoring the distinct surface core-level shifts and intensities, the atomic species and their relative populations were revealed. The film morphology, growth mode, and the surface structure of the clean surfaces and the grown film were all investigated by STM. The results showed significant intermixing at the interface at fairly low temperature. The atomistic behavior and the growth mode were explained in terms of the surface energy and the effect of segregated Ge as a surfactant. In the Si VPE on Si(100)-(2 x 1), Ge(100)-(2 x 1), and Ge(111)-c(2 x 8) using disilane, STM images resolved the adsorption geometry of individual dissociated fragments, ordering kinetics, and grown film morphology. By combining information from the core-level spectroscopy, the STM images, and the electron diffraction results, a detailed description of adsorption, thermal reactions, and hydrogen desorption proceeded during VPE was obtained. An "atomic layer epitaxy" (ALE) process was also developed to grow epitaxial Si layerwise at temperatures as low as 820 K.