Strain Induced Effects In Advanced Mosfets
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Strain Induced Effects In Advanced Mosfets
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Author : Viktor Sverdlov
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-06
Strain Induced Effects In Advanced Mosfets written by Viktor Sverdlov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-06 with Technology & Engineering categories.
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Strain Induced Effects On Lateral Power Mosfets
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Author : Jingjing Michelle Liu
language : en
Publisher:
Release Date : 2009
Strain Induced Effects On Lateral Power Mosfets written by Jingjing Michelle Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There are differences between logic MOSFETs and power MOSFETs. Experimental results for n-type power MOSFETs show reduced enhancement with stress. This is explained by effect of vertical spreading of carriers into the substrate. On-resistance distribution has therefore been studied and piezoresistance coefficients are modeled to validate experimental results. In summary, this work proves strain to be beneficial in improving lateral power MOSFETs performance and provides the most favorable channel direction and stress type for the first time.
Strain Engineered Mosfets
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Author : C.K. Maiti
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Strain Engineered Mosfets written by C.K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Strain Effects In Long To Short Channel Mosfets
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Author : Srivatsan Parthasarathy
language : en
Publisher:
Release Date : 2012
Strain Effects In Long To Short Channel Mosfets written by Srivatsan Parthasarathy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
The impact of underlapped architecture on the parasitic source/drain resistance is explained with a simple model. The physics of stress transfer in FinFETs is qualitatively studied with a thorough review of existing literature along with experiments and simulation of mechanical wafer bending. To clarify the physics of quasi-ballistic carrier transport and the impact of strain, an updated one-flux theory based transport model is developed. It is verified that the high field optical phonon scattering plays an important role in determining the overall saturation current due to the inherent feedback between device electrostatics and carrier transport. A surface-potential based analytical formula for the nanoscale transmission coefficient including high field and quantum confinement effects is developed. The differences between the strain-induced linear and saturation current enhancements for electrons and holes is qualitatively explained.
Strain Effects On The Performance Of Silicon Mosfets
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Author : Xiaodong Yang
language : en
Publisher:
Release Date : 2009
Strain Effects On The Performance Of Silicon Mosfets written by Xiaodong Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
A self-consistent solution to the Poisson and Schro umlautdinger's equation considering the strain Hamiltonian combined with the transfer matrix method are used for modeling the tunneling process. Hole and electron mobility is studied for strained p and n-channel MOSFETs at low temperature. Longitudinal compressive stress increased hole mobility enhancement is observed as temperature is lowed from 300K to 87K. With a six band k.p model and finite difference formalism, comparison with calculation suggests hole mobility is phonon-limited at room temperatures, while it is limited by both surface roughness and phonon scattering around 87K. Strain induced mobility enhancement at low temperature arises from the reduction of the average hole conductive effective mass due to band warping. However, surface roughness reduction is the dominant physical mechanism for n-channel MOSFETs. Several physical models are discussed and a reasonable modification of present model is presented. Metal gate induced effective work function change provide a good candidate for work function tuning which is one of the most challenge parts for the present high-k/metal gate devices. Both external mechanical stress and process induced large stress indicated that the effective work function always decrease with the applied stresses regardless the type of stresses. Although the stress induced by the TiN gate strongly depends on the thermal treatment, thermal annealing process generates tension inside the gate. Bowing technique and charge pumping method are used for stress and interface state measurement, respectively. It is indicated that the EWF decrease with the reduction of metal gate thickness and the interface state induced donor-like charge generation is the dominant physical mechanism.
Functional Nanomaterials And Devices For Electronics Sensors And Energy Harvesting
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Author : Alexei Nazarov
language : en
Publisher: Springer
Release Date : 2014-08-28
Functional Nanomaterials And Devices For Electronics Sensors And Energy Harvesting written by Alexei Nazarov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-08-28 with Technology & Engineering categories.
This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.
Introducing Technology Computer Aided Design Tcad
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2017-03-16
Introducing Technology Computer Aided Design Tcad written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-03-16 with Science categories.
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.
Mosfet Technologies For Double Pole Four Throw Radio Frequency Switch
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Author : Viranjay M. Srivastava
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-07
Mosfet Technologies For Double Pole Four Throw Radio Frequency Switch written by Viranjay M. Srivastava and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-07 with Technology & Engineering categories.
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Computer Aided Design Of Micro And Nanoelectronic Devices
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Author : Chinmay Kumar Maiti
language : en
Publisher: World Scientific
Release Date : 2016-10-27
Computer Aided Design Of Micro And Nanoelectronic Devices written by Chinmay Kumar Maiti and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-27 with Technology & Engineering categories.
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Advanced Cmos Compatible Semiconductor Devices 17
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Author : Y. Omura
language : en
Publisher: The Electrochemical Society
Release Date : 2015
Advanced Cmos Compatible Semiconductor Devices 17 written by Y. Omura and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.