Strain Induced Effects On Lateral Power Mosfets

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Strain Induced Effects On Lateral Power Mosfets

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Author : Jingjing Michelle Liu
language : en
Publisher:
Release Date : 2009

Strain Induced Effects On Lateral Power Mosfets written by Jingjing Michelle Liu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.

Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There are differences between logic MOSFETs and power MOSFETs. Experimental results for n-type power MOSFETs show reduced enhancement with stress. This is explained by effect of vertical spreading of carriers into the substrate. On-resistance distribution has therefore been studied and piezoresistance coefficients are modeled to validate experimental results. In summary, this work proves strain to be beneficial in improving lateral power MOSFETs performance and provides the most favorable channel direction and stress type for the first time.

Strain Induced Effects In Advanced Mosfets

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Author : Viktor Sverdlov
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-06

Strain Induced Effects In Advanced Mosfets written by Viktor Sverdlov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-06 with Technology & Engineering categories.

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Impact Of Strain On Memory And Lateral Power Mosfets

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Author : Umamaheswari Aghoram
language : en
Publisher:
Release Date : 2010

Impact Of Strain On Memory And Lateral Power Mosfets written by Umamaheswari Aghoram and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.

Maximum breakdown voltage. This work focuses on the application of mechanical stress to improve the performance of Lateral Diffusion MOSFET. The device behavior was analyzed by measuring and extracting piezoresistance coefficients of these devices and by monitoring avalanche breakdown with mechanical stress. It was found that the on-resistance reduced with stress, while breakdown voltage remained a constant thus making strain a viable performance booster in these devices. With the understanding of device behavior with strain, the application of stress via process was simulated with FLOOPS and Sentaurus process. The amount/ type of stress present in device gives insight into strained device structure and performance.

Strain Effects In Long To Short Channel Mosfets

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Author : Srivatsan Parthasarathy
language : en
Publisher:
Release Date : 2012

Strain Effects In Long To Short Channel Mosfets written by Srivatsan Parthasarathy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.

The impact of underlapped architecture on the parasitic source/drain resistance is explained with a simple model. The physics of stress transfer in FinFETs is qualitatively studied with a thorough review of existing literature along with experiments and simulation of mechanical wafer bending. To clarify the physics of quasi-ballistic carrier transport and the impact of strain, an updated one-flux theory based transport model is developed. It is verified that the high field optical phonon scattering plays an important role in determining the overall saturation current due to the inherent feedback between device electrostatics and carrier transport. A surface-potential based analytical formula for the nanoscale transmission coefficient including high field and quantum confinement effects is developed. The differences between the strain-induced linear and saturation current enhancements for electrons and holes is qualitatively explained.

Proceedings Of The International Conference On Microelectronics Computing Communication Systems

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Author : Vijay Nath
language : en
Publisher: Springer
Release Date : 2017-12-29

Proceedings Of The International Conference On Microelectronics Computing Communication Systems written by Vijay Nath and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-29 with Technology & Engineering categories.

This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics, Computer, Communication and Information Technology and their applications in business, academic, industry and other allied areas. The main aim of this volume is to bring together content from international scientists, researchers, engineers from both academia and the industry. The contents of this volume will prove useful to researchers, professionals, and students alike.

Functional Nanomaterials And Devices For Electronics Sensors And Energy Harvesting

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Author : Alexei Nazarov
language : en
Publisher: Springer
Release Date : 2014-08-28

Functional Nanomaterials And Devices For Electronics Sensors And Energy Harvesting written by Alexei Nazarov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-08-28 with Technology & Engineering categories.

This book contains reviews of recent experimental and theoretical results related to nanomaterials. It focuses on novel functional materials and nanostructures in combination with silicon on insulator (SOI) devices, as well as on the physics of new devices and sensors, nanostructured materials and nano scaled device characterization. Special attention is paid to fabrication and properties of modern low-power, high-performance, miniaturized, portable sensors in a wide range of applications such as telecommunications, radiation control, biomedical instrumentation and chemical analysis. In this book, new approaches exploiting nanotechnologies (such as UTBB FD SOI, Fin FETs, nanowires, graphene or carbon nanotubes on dielectric) to pave a way between “More Moore” and “More than Moore” are considered, in order to create different kinds of sensors and devices which will consume less electrical power, be more portable and totally compatible with modern microelectronics products.

Strain Effect In Semiconductors

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Author : Yongke Sun
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-11-14

Strain Effect In Semiconductors written by Yongke Sun and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-11-14 with Technology & Engineering categories.

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Issues In Electronic Circuits Devices And Materials 2011 Edition

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Author :
language : en
Publisher: ScholarlyEditions
Release Date : 2012-01-09

Issues In Electronic Circuits Devices And Materials 2011 Edition written by and has been published by ScholarlyEditions this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-01-09 with Technology & Engineering categories.

Issues in Electronic Circuits, Devices, and Materials: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Electronic Circuits, Devices, and Materials. The editors have built Issues in Electronic Circuits, Devices, and Materials: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Electronic Circuits, Devices, and Materials in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Electronic Circuits, Devices, and Materials: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

The Piezojunction Effect In Silicon Integrated Circuits And Sensors

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Author : Fabiano Fruett
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-04-18

The Piezojunction Effect In Silicon Integrated Circuits And Sensors written by Fabiano Fruett and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-04-18 with Technology & Engineering categories.

This book describes techniques that can reduce mechanical-stress-induced inaccuracy and long-term instability in chips. The authors also show that the piezojunction effect can be applied for new types of mechanical-sensor structures. Thermo-mechanical stress is induced when packaged chips cool down to the temperature of application.

Strain Engineered Mosfets

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Author : C.K. Maiti
language : en
Publisher: CRC Press
Release Date : 2018-10-03

Strain Engineered Mosfets written by C.K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.