Strain Effects In Long To Short Channel Mosfets
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Strain Effects In Long To Short Channel Mosfets
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Author : Srivatsan Parthasarathy
language : en
Publisher:
Release Date : 2012
Strain Effects In Long To Short Channel Mosfets written by Srivatsan Parthasarathy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
The impact of underlapped architecture on the parasitic source/drain resistance is explained with a simple model. The physics of stress transfer in FinFETs is qualitatively studied with a thorough review of existing literature along with experiments and simulation of mechanical wafer bending. To clarify the physics of quasi-ballistic carrier transport and the impact of strain, an updated one-flux theory based transport model is developed. It is verified that the high field optical phonon scattering plays an important role in determining the overall saturation current due to the inherent feedback between device electrostatics and carrier transport. A surface-potential based analytical formula for the nanoscale transmission coefficient including high field and quantum confinement effects is developed. The differences between the strain-induced linear and saturation current enhancements for electrons and holes is qualitatively explained.
Fundamentals Of Modern Vlsi Devices
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Author : Yuan Taur
language : en
Publisher: Cambridge University Press
Release Date : 2021-12-02
Fundamentals Of Modern Vlsi Devices written by Yuan Taur and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-12-02 with Computers categories.
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
Effectiveness Of Strain Solutions For Next Generation Mosfets
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Author : Nuo Xu
language : en
Publisher:
Release Date : 2012
Effectiveness Of Strain Solutions For Next Generation Mosfets written by Nuo Xu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the worsening performance variability and short channel effects. Thin body transistors, including Multiple-Gate (FinFET & Tri-Gate FET) and Fully Depleted SOI (FD-SOI) MOSFETs are anticipated to replace the current transistor architecture, and will be used in future CMOS technology nodes. Strained Silicon technology is widely used today to boost planar bulk transistor performance. Thus it's technically important to examine the strain-induced performance enhancement in these thin body transistors, for nanometer scale channel length. A comprehensive study on impact of channel stress on ultra-thin-body FD-SOI MOSFETs is presented. It's found that strain-induced mobility enhancement diminishes with Silicon body thickness scaling below 5nm for electrons, but not for holes. Strain-induced carrier transport enhancement is maintained with gate-length scaling. By applying forward back biasing (FBB) through the ultra-thin Buried Oxide layer, both carrier mobilities and their responses to strain get enhanced. For Multiple-gate FETs, the impact of performance enhancement through various types of stressors (including CESL, SiGe Source/Drain, Strained SOI and Metal Gate Last process) is studied, for different fin crystalline orientations and aspect ratios, to provide guidance for 3-D transistor design optimization.
Strain Engineered Mosfets
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Author : C.K. Maiti
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Strain Engineered Mosfets written by C.K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Fundamentals Of Nanoscaled Field Effect Transistors
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Author : Amit Chaudhry
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-23
Fundamentals Of Nanoscaled Field Effect Transistors written by Amit Chaudhry and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-23 with Technology & Engineering categories.
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Semiconductor On Insulator Materials For Nanoelectronics Applications
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Author : Alexei Nazarov
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-03-03
Semiconductor On Insulator Materials For Nanoelectronics Applications written by Alexei Nazarov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-03-03 with Technology & Engineering categories.
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Process Integration And Performance Evaluation Of Ge Based Quantum Well Channel Mosfets For Sub 22nm Node Digital Cmos Logic Technology
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Author : Se-Hoon Lee
language : en
Publisher:
Release Date : 2011
Process Integration And Performance Evaluation Of Ge Based Quantum Well Channel Mosfets For Sub 22nm Node Digital Cmos Logic Technology written by Se-Hoon Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Since metal-oxide-semiconductor (MOS) device was first reported around 1959 and utilized for integrated circuits in 1961, complementary MOS technology has become the mainstream of semiconductor industry. Its performance has been improved based on scaling of dimensions of MOS field-effect-transistors (MOSFET) in accordance with Moore's law, which states that the density of MOSFETs due to scaling approximately doubles every two years. Entering into sub-100nm regime caused a lot of challenges. Traditional way of scaling no longer provided performance enhancement of individual MOSFETs. Increased channel doping which is required to prevent degradation of device electrostatics from short channel effects caused carrier mobility degradation. New inventions needed to be incorporated to sustain performance enhancement trend with scaling. Implementation of process induced strained Si technology allowed mobility enhancement, and high-K/metal gate instead of conventional poly-Si/SiO2 allowed continuing electrical gate oxide thickness scaling, hence extending the life span of Moore's law. As we are now moving toward 22nm logic technology and below, new concerns have been rapidly aroused. Controlling power consumption and performance variability are becoming as important as developing scaled devices with enhanced performance. Expandability of strained-Si channel technology via process induced strain also faces increasing complexity from ever tighter gate pitch and difficulties in controlling defect level with the channel stress enhancement techniques. At the same time, long-lasting planar MOSFET architecture also faces serious challenges due to the limits of controlling short channel effects. New paradigms and pathways for future technology seems to be required. As a result, new material sets, new device architectures and concepts are being vigorously explored in the literature. These new trends can be categorized into three groups: MOSFET structure with (non-Si) high mobility channel materials, advanced (non-planar) MOSFET structures, and MOSFET-type structures with new device operation concepts such as tunneling FETs. This dissertation presents research on high mobility channel MOSFET structures (planar and non-planar) using group IV material (mainly SiGe) for enhanced performance and reduced operating power. This work especially focuses on improving the performance of short channel device performance of SiGe channel pMOSFETs which has long been researched yet clearly demonstrated in literature only recently. To reach the goal, novel processing technologies such as millisecond flash source/drain anneal and high pressure hydrogen post-metal anneal are explored. Finally, performance dependence on channel and substrate direction has been analyzed to find the optimal use of these SiGe channels. This work describes an exciting opportunity of weighting the possibility of using high mobility channel MOSFETs for future logic technology.
Simulation Of Semiconductor Processes And Devices 2007
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Author : Tibor Grasser
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-09-18
Simulation Of Semiconductor Processes And Devices 2007 written by Tibor Grasser and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-09-18 with Computers categories.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Recent Topics On Modeling Of Semiconductor Processes Devices And Circuits
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Author : Rasit Onur Topaloglu
language : en
Publisher: Bentham Science Publishers
Release Date : 2011-09-09
Recent Topics On Modeling Of Semiconductor Processes Devices And Circuits written by Rasit Onur Topaloglu and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-09-09 with Technology & Engineering categories.
"The last couple of years have been very busy for the semiconductor industry and researchers. The rapid speed of production channel length reduction has brought lithographic challenges to semiconductor modeling. These include stress optimization, transisto"
Field Effect Transistors A Comprehensive Overview
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Author : Pouya Valizadeh
language : en
Publisher: John Wiley & Sons
Release Date : 2016-02-01
Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-01 with Technology & Engineering categories.
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.