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Structure And Electronic Properties Of Ultrathin In Films On Si 111


Structure And Electronic Properties Of Ultrathin In Films On Si 111
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Structure And Electronic Properties Of Ultrathin In Films On Si 111


Structure And Electronic Properties Of Ultrathin In Films On Si 111
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Author : Shigemi Terakawa
language : en
Publisher: Springer Nature
Release Date : 2022-11-07

Structure And Electronic Properties Of Ultrathin In Films On Si 111 written by Shigemi Terakawa and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-07 with Technology & Engineering categories.


This book reports the establishment of a single-atomic layer metal of In and a novel (In, Mg) ultrathin film on Si(111) surfaces. A double-layer phase of In called “rect” has been extensively investigated as a two-dimensional metal. Another crystalline phase called “hex” was also suggested, but it had not been established due to difficulty in preparing the sample. The author succeeded in growing the large and high-quality sample of the hex phase and revealed that it is a single-layer metal. The author also established a new triple-atomic layer (In, Mg) film with a nearly freestanding character by Mg deposition onto the In double layer. This work proposes a novel method to decouple ultrathin metal films from Si dangling bonds. The present study demonstrates interesting properties of indium itself, which is a p-block metal both with metallicity and covalency. In this book, readers also see principles of various surface analysis techniques and learn how to use them and analyze the results in the real systems. This book is useful to researchers and students interested in surface science, particularly ultrathin metal films on semiconductor surfaces.



Structure And Electronic Properties Of Ultrathin In Films On Si 111


Structure And Electronic Properties Of Ultrathin In Films On Si 111
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Author : Shigemi Terakawa
language : en
Publisher:
Release Date : 2022

Structure And Electronic Properties Of Ultrathin In Films On Si 111 written by Shigemi Terakawa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with categories.


This book reports the establishment of a single-atomic layer metal of In and a novel (In, Mg) ultrathin film on Si(111) surfaces. A double-layer phase of In called "rect" has been extensively investigated as a two-dimensional metal. Another crystalline phase called "hex" was also suggested, but it had not been established due to difficulty in preparing the sample. The author succeeded in growing the large and high-quality sample of the hex phase and revealed that it is a single-layer metal. The author also established a new triple-atomic layer (In, Mg) film with a nearly freestanding character by Mg deposition onto the In double layer. This work proposes a novel method to decouple ultrathin metal films from Si dangling bonds. The present study demonstrates interesting properties of indium itself, which is a p-block metal both with metallicity and covalency. In this book, readers also see principles of various surface analysis techniques and learn how to use them and analyze the results in the real systems. This book is useful to researchers and students interested in surface science, particularly ultrathin metal films on semiconductor surfaces.



Structure And Electronic Properties Of Ultrathin Dielectric Films On Silicon And Related Structures Volume 592


Structure And Electronic Properties Of Ultrathin Dielectric Films On Silicon And Related Structures Volume 592
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Author : D. A. Buchanan
language : en
Publisher:
Release Date : 2000-10-17

Structure And Electronic Properties Of Ultrathin Dielectric Films On Silicon And Related Structures Volume 592 written by D. A. Buchanan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-10-17 with Technology & Engineering categories.


The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others.



Silicon Molecular Beam Epitaxy


Silicon Molecular Beam Epitaxy
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Author : E. Kasper
language : en
Publisher: CRC Press
Release Date : 2018-05-04

Silicon Molecular Beam Epitaxy written by E. Kasper and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-04 with Technology & Engineering categories.


This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.



Topological Insulators


Topological Insulators
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Author : Frank Ortmann
language : en
Publisher: John Wiley & Sons
Release Date : 2015-06-29

Topological Insulators written by Frank Ortmann and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-29 with Technology & Engineering categories.


There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic states, the Dirac point, quantum Hall effects and Majorana fermions are illuminated in individual chapters and are described in a clear and logical form. Written by an international team of experts, many of them directly involved in the very first discovery of topological insulators, the book provides the readers with the knowledge they need to understand the electronic behavior of these unique materials. Being more than a reference work, this book is essential for newcomers and advanced researchers working in the field of topological insulators.



Silicene


Silicene
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Author : Patrick Vogt
language : en
Publisher: Springer
Release Date : 2018-11-02

Silicene written by Patrick Vogt and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-11-02 with Science categories.


This book discusses the processing and properties of silicene, including the historical and theoretical background of silicene, theoretical predictions, the synthesis and experimental properties of silicene and the potential applications and further developments. It also presents other similar monolayer materials, like germanene and phosphorene. Silicene, a new silicon allotrope with a graphene-like, honeycomb structure, has recently attracted considerable interest, because its topology affords it the same remarkable electronic properties as those of graphene. Additionally, silicene may have the potential advantage of being easily integrated in current Si-based nano/micro-electronics, offering novel technological applications. Silicene was theoretically conjectured a few years ago as a stand-alone material. However, it does not exist in nature and had to be synthesized on a substrate. It has since been successfully synthesized and multi-layer silicene structures are already being discussed. Within just a few years, silicene is now on the brink of technological applications in electronic devices.



Introduction To The Physics Of Silicene And Other 2d Materials


Introduction To The Physics Of Silicene And Other 2d Materials
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Author : Seymur Cahangirov
language : en
Publisher: Springer
Release Date : 2016-11-01

Introduction To The Physics Of Silicene And Other 2d Materials written by Seymur Cahangirov and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-01 with Science categories.


This concise book offers an essential introduction and reference guide for the many newcomers to the field of physics of elemental 2D materials. Silicene and related materials are currently among the most actively studied materials, especially following the first experimental synthesis on substrates in 2012. Accordingly, this primer introduces and reviews the most crucial developments regarding silicene from both theoretical and experimental perspectives. At the same time the reader is guided through the extensive body of relevant foundational literature. The text starts with a brief history of silicene, followed by a comparison of the bonding nature in silicon versus carbon atoms. Here, a simple but robust framework is established to help the reader follow the concepts presented throughout the book. The book then presents the atomic and electronic structure of free-standing silicene, followed by an account of the experimental realization of silicene on substrates. This topic is subsequently developed further to discuss various reconstructions that silicene acquires due to interactions with the substrate and how such effects are mirrored in the electronic properties. Next the book examines the dumbbell structure that is the key to understanding the growth mechanism and atomic structure of multilayer silicene. Last but not least, it addresses similar effects in other elemental 2D materials from group IV (germanene, stanane), group V (phosphorene) and group III (borophene), as well as transition metal dichalcogenides and other compositions, so as to provide a general comparative overview of their electronic properties.



Exploring The Electronic Properties Of Novel Spintronic Materials By Photoelectron Spectroscopy


Exploring The Electronic Properties Of Novel Spintronic Materials By Photoelectron Spectroscopy
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Author : Alexej Herdt
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2012

Exploring The Electronic Properties Of Novel Spintronic Materials By Photoelectron Spectroscopy written by Alexej Herdt and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.




Ulsi Process Integration 5


Ulsi Process Integration 5
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Author : Cor L. Claeys
language : en
Publisher: The Electrochemical Society
Release Date : 2007

Ulsi Process Integration 5 written by Cor L. Claeys and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.


The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.



Auger Electron Spectroscopy


Auger Electron Spectroscopy
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Author : Donald T. Hawkins
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Auger Electron Spectroscopy written by Donald T. Hawkins and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.


Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.