The Properties Of Oxygen And Nitrogen In Silicon

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The Properties Of Oxygen And Nitrogen In Silicon

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Author : Michael Bent
language : en
Publisher:
Release Date : 2007

The Properties Of Oxygen And Nitrogen In Silicon written by Michael Bent and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Silicon crystals categories.

Nasa Technical Paper

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Author :
language : en
Publisher:
Release Date : 1978

Nasa Technical Paper written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with Astronautics categories.

C H N And O In Si And Characterization And Simulation Of Materials And Processes

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Author : A. Borghesi
language : en
Publisher: Newnes
Release Date : 2012-12-02

C H N And O In Si And Characterization And Simulation Of Materials And Processes written by A. Borghesi and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.

Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry.The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2

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Author : B.E. Deal
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-09

The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 2 written by B.E. Deal and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-09 with Science categories.

The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Early Stages Of Oxygen Precipitation In Silicon

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Author : R. Jones
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11

Early Stages Of Oxygen Precipitation In Silicon written by R. Jones and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.

It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Wadc Technical Report

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Author : United States. Wright Air Development Division
language : en
Publisher:
Release Date : 1958

Wadc Technical Report written by United States. Wright Air Development Division and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1958 with Aeronautics categories.

Tailoring Of Mechanical Properties Of Si3n4 Ceramics

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Author : Michael J. Hoffmann
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-02-02

Tailoring Of Mechanical Properties Of Si3n4 Ceramics written by Michael J. Hoffmann and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-02-02 with Technology & Engineering categories.

Proceedings of the NATO Advanced Research Workshop on `Tailoring of High Temperature Properties of Si3N4 Ceramics', Schloß Ringberg/Munich, Germany, October 6--9, 1993

Silicon Based Unified Memory Devices And Technology

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Author : Arup Bhattacharyya
language : en
Publisher: CRC Press
Release Date : 2017-07-06

Silicon Based Unified Memory Devices And Technology written by Arup Bhattacharyya and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Technology & Engineering categories.

The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.

Intrinsic Point Defects Impurities And Their Diffusion In Silicon

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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

The Properties Of Nitrogen And Oxygen In Silicon

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Author : J. D. Murphy
language : en
Publisher:
Release Date : 2006

The Properties Of Nitrogen And Oxygen In Silicon written by J. D. Murphy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Silicon crystals categories.