The Properties Of Oxygen And Nitrogen In Silicon
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The Properties Of Oxygen And Nitrogen In Silicon
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Author : Michael Bent
language : en
Publisher:
Release Date : 2007
The Properties Of Oxygen And Nitrogen In Silicon written by Michael Bent and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Silicon crystals categories.
The Properties Of Nitrogen And Oxygen In Silicon
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Author : J. D. Murphy
language : en
Publisher:
Release Date : 2006
The Properties Of Nitrogen And Oxygen In Silicon written by J. D. Murphy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Silicon crystals categories.
Electrical Properties Of Nitrogen And Oxygen Ion Implanted Silicon
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Author : Vince Peter Tovizi
language : en
Publisher:
Release Date : 1976
Electrical Properties Of Nitrogen And Oxygen Ion Implanted Silicon written by Vince Peter Tovizi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1976 with categories.
Early Stages Of Oxygen Precipitation In Silicon
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Author : R. Jones
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Early Stages Of Oxygen Precipitation In Silicon written by R. Jones and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
The Properties Of Nitrogen In Silicon
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Author : C. R. Alpass
language : en
Publisher:
Release Date : 2008
The Properties Of Nitrogen In Silicon written by C. R. Alpass and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Silicon crystals categories.
Photoelectric And Transport Properties Of Hydrogenated Amorphous Silicon Incorporated With Oxygen And Nitrogen
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Author : Koarakot Jiranapakul
language : en
Publisher:
Release Date : 1987
Photoelectric And Transport Properties Of Hydrogenated Amorphous Silicon Incorporated With Oxygen And Nitrogen written by Koarakot Jiranapakul and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Silicon categories.
Investigation Of The Properties Of Oxygen In Silicon For Semiconductor Devices And Solar Cells
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Author : Benjamin C. Pygall
language : en
Publisher:
Release Date : 2005
Investigation Of The Properties Of Oxygen In Silicon For Semiconductor Devices And Solar Cells written by Benjamin C. Pygall and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Semiconductors categories.
Oxygen In Silicon
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Author :
language : en
Publisher: Academic Press
Release Date : 1994-08-15
Oxygen In Silicon written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-08-15 with Technology & Engineering categories.
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings
Nasa Technical Paper
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Author :
language : en
Publisher:
Release Date : 1978
Nasa Technical Paper written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with Science categories.
Oxygen Carbon Hydrogen And Nitrogen In Crystalline Silicon
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Author : J. C. Mikkelsen
language : en
Publisher:
Release Date : 1986
Oxygen Carbon Hydrogen And Nitrogen In Crystalline Silicon written by J. C. Mikkelsen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Science categories.