Timing Performance Of Nanometer Digital Circuits Under Process Variations
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Timing Performance Of Nanometer Digital Circuits Under Process Variations
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Author : Victor Champac
language : en
Publisher:
Release Date : 2018
Timing Performance Of Nanometer Digital Circuits Under Process Variations written by Victor Champac and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018 with Integrated circuits categories.
This book discusses the digital design of integrated circuits under process variations, with a focus on design-time solutions. The authors describe a step-by-step methodology, going from logic gates to logic paths to the circuit level. Topics are presented in comprehensively, without overwhelming use of analytical formulations. Emphasis is placed on providing digital designers with understanding of the sources of process variations, their impact on circuit performance and tools for improving their designs to comply with product specifications. Various circuit-level "design hints" are highlighted, so that readers can use then to improve their designs. A special treatment is devoted to unique design issues and the impact of process variations on the performance of FinFET based circuits. This book enables readers to make optimal decisions at design time, toward more efficient circuits, with better yield and higher reliability.
Timing Performance Of Nanometer Digital Circuits Under Process Variations
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Author : Victor Champac
language : en
Publisher: Springer
Release Date : 2018-04-18
Timing Performance Of Nanometer Digital Circuits Under Process Variations written by Victor Champac and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-04-18 with Technology & Engineering categories.
This book discusses the digital design of integrated circuits under process variations, with a focus on design-time solutions. The authors describe a step-by-step methodology, going from logic gates to logic paths to the circuit level. Topics are presented in comprehensively, without overwhelming use of analytical formulations. Emphasis is placed on providing digital designers with understanding of the sources of process variations, their impact on circuit performance and tools for improving their designs to comply with product specifications. Various circuit-level “design hints” are highlighted, so that readers can use then to improve their designs. A special treatment is devoted to unique design issues and the impact of process variations on the performance of FinFET based circuits. This book enables readers to make optimal decisions at design time, toward more efficient circuits, with better yield and higher reliability.
Design Of Variation Tolerant Circuits For Nanometer Cmos Technology
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Author : Mohamed Hassan Abu-Rahma
language : en
Publisher:
Release Date : 2008
Design Of Variation Tolerant Circuits For Nanometer Cmos Technology written by Mohamed Hassan Abu-Rahma and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Aggressive scaling of CMOS technology in sub-90nm nodes has created huge challenges. Variations due to fundamental physical limits, such as random dopants fluctuation (RDF) and line edge roughness (LER) are increasing significantly with technology scaling. In addition, manufacturing tolerances in process technology are not scaling at the same pace as transistor's channel length due to process control limitations (e.g., sub-wavelength lithography). Therefore, within-die process variations worsen with successive technology generations. These variations have a strong impact on the maximum clock frequency and leakage power for any digital circuit, and can also result in functional yield losses in variation-sensitive digital circuits (such as SRAM). Moreover, in nanometer technologies, digital circuits show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost while achieving higher performance and density. It is therefore not surprising that the International Technology Roadmap for Semiconductors (ITRS) lists variability as one of the most challenging obstacles for IC design in nanometer regime. To facilitate variation-tolerant design, we study the impact of random variations on the delay variability of a logic gate and derive simple and scalable statistical models to evaluate delay variations in the presence of within-die variations. This work provides new design insight and highlights the importance of accounting for the effect of input slew on delay variations, especially at lower supply voltages.
Flip Flop Design In Nanometer Cmos
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Author : Massimo Alioto
language : en
Publisher: Springer
Release Date : 2014-10-14
Flip Flop Design In Nanometer Cmos written by Massimo Alioto and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-10-14 with Technology & Engineering categories.
This book provides a unified treatment of Flip-Flop design and selection in nanometer CMOS VLSI systems. The design aspects related to the energy-delay tradeoff in Flip-Flops are discussed, including their energy-optimal selection according to the targeted application, and the detailed circuit design in nanometer CMOS VLSI systems. Design strategies are derived in a coherent framework that includes explicitly nanometer effects, including leakage, layout parasitics and process/voltage/temperature variations, as main advances over the existing body of work in the field. The related design tradeoffs are explored in a wide range of applications and the related energy-performance targets. A wide range of existing and recently proposed Flip-Flop topologies are discussed. Theoretical foundations are provided to set the stage for the derivation of design guidelines, and emphasis is given on practical aspects and consequences of the presented results. Analytical models and derivations are introduced when needed to gain an insight into the inter-dependence of design parameters under practical constraints. This book serves as a valuable reference for practicing engineers working in the VLSI design area, and as text book for senior undergraduate, graduate and postgraduate students (already familiar with digital circuits and timing).
Robust Design Of Variation Sensitive Digital Circuits
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Author : Hassan Mostafa
language : en
Publisher:
Release Date : 2011
Robust Design Of Variation Sensitive Digital Circuits written by Hassan Mostafa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
The nano-age has already begun, where typical feature dimensions are smaller than 100nm. The operating frequency is expected to increase up to 12 GHz, and a single chip will contain over 12 billion transistors in 2020, as given by the International Technology Roadmap for Semiconductors (ITRS) initiative. ITRS also predicts that the scaling of CMOS devices and process technology, as it is known today, will become much more difficult as the industry advances towards the 16nm technology node and further. This aggressive scaling of CMOS technology has pushed the devices to their physical limits. Design goals are governed by several factors other than power, performance and area such as process variations, radiation induced soft errors, and aging degradation mechanisms. These new design challenges have a strong impact on the parametric yield of nanometer digital circuits and also result in functional yield losses in variation-sensitive digital circuits such as Static Random Access Memory (SRAM) and flip-flops. Moreover, sub-threshold SRAM and flip-flops circuits, which are aggravated by the strong demand for lower power consumption, show larger sensitivity to these challenges which reduces their robustness and yield. Accordingly, it is not surprising that the ITRS considers variability and reliability as the most challenging obstacles for nanometer digital circuits robust design. Soft errors are considered one of the main reliability and robustness concerns in SRAM arrays in sub-100nm technologies due to low operating voltage, small node capacitance, and high packing density. The SRAM arrays soft errors immunity is also affected by process variations. We develop statistical design-oriented soft errors immunity variations models for super-threshold and sub-threshold SRAM cells accounting for die-to-die variations and within-die variations. This work provides new design insights and highlights the important design knobs that can be used to reduce the SRAM cells soft errors immunity variations. The developed models are scalable, bias dependent, and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit optimization as well as technology prediction. The derived models are verified using Monte Carlo SPICE simulations, referring to an industrial hardware-calibrated 65nm CMOS technology. The demand for higher performance leads to very deep pipelining which means that hundreds of thousands of flip-flops are required to control the data flow under strict timing constraints. A violation of the timing constraints at a flip-flop can result in latching incorrect data causing the overall system to malfunction. In addition, the flip-flops power dissipation represents a considerable fraction of the total power dissipation. Sub-threshold flip-flops are considered the most energy efficient solution for low power applications in which, performance is of secondary importance. Accordingly, statistical gate sizing is conducted to different flip-flops topologies for timing yield improvement of super-threshold flip-flops and power yield improvement of sub-threshold flip-flops. Following that, a comparative analysis between these flip-flops topologies considering the required overhead for yield improvement is performed. This comparative analysis provides useful recommendations that help flip-flops designers on selecting the best flip-flops topology that satisfies their system specifications while taking the process variations impact and robustness requirements into account. Adaptive Body Bias (ABB) allows the tuning of the transistor threshold voltage, Vt, by controlling the transistor body voltage. A forward body bias reduces Vt, increasing the device speed at the expense of increased leakage power. Alternatively, a reverse body bias increases Vt, reducing the leakage power but slowing the device. Therefore, the impact of process variations is mitigated by speeding up slow and less leaky devices or slowing down devices that are fast and highly leaky. Practically, the implementation of the ABB is desirable to bias each device in a design independently, to mitigate within-die variations. However, supplying so many separate voltages inside a die results in a large area overhead. On the other hand, using the same body bias for all devices on the same die limits its capability to compensate for within-die variations. Thus, the granularity level of the ABB scheme is a trade-off between the within-die variations compensation capability and the associated area overhead. This work introduces new ABB circuits that exhibit lower area overhead by a factor of 143X than that of previous ABB circuits. In addition, these ABB circuits are resolution free since no digital-to-analog converters or analog-to-digital converters are required on their implementations. These ABB circuits are adopted to high performance critical paths, emulating a real microprocessor architecture, for process variations compensation and also adopted to SRAM arrays, for Negative Bias Temperature Instability (NBTI) aging and process variations compensation. The effectiveness of the new ABB circuits is verified by post layout simulation results and test chip measurements using triple-well 65nm CMOS technology. The highly capacitive nodes of wide fan-in dynamic circuits and SRAM bitlines limit the performance of these circuits. In addition, process variations mitigation by statistical gate sizing increases this capacitance further and fails in achieving the target yield improvement. We propose new negative capacitance circuits that reduce the overall parasitic capacitance of these highly capacitive nodes. These negative capacitance circuits are adopted to wide fan-in dynamic circuits for timing yield improvement up to 99.87% and to SRAM arrays for read access yield improvement up to 100%. The area and power overheads of these new negative capacitance circuits are amortized over the large die area of the microprocessor and the SRAM array. The effectiveness of the new negative capacitance circuits is verified by post layout simulation results and test chip measurements using 65nm CMOS technology.
High Performance Digital Circuit Techniques
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Author : Sayed Alireza Sadrossadat
language : en
Publisher: LAP Lambert Academic Publishing
Release Date : 2012-03-01
High Performance Digital Circuit Techniques written by Sayed Alireza Sadrossadat and has been published by LAP Lambert Academic Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-03-01 with Digital electronics categories.
Achieving high performance is one of the most difficult challenges in designing digital circuits. Flip-flops and adders are key blocks in most digital systems and must therefore be designed to yield highest performance. In this book, a new high performance serial adder is developed while power consumption is attained. Also, a statistical framework for the design of flip-flops is introduced that ensures that such sequential circuits meet timing yield under performance criteria. Firstly, a high performance serial adder is developed based on the idea of having a constant delay for the addition of two operands. While conventional adders exhibit logarithmic delay. Also the proposed adder exhibits less area and power consumption. Secondly, a statistical framework for the design of flip-flops under process variations is presented in order to maximize their timing yield. In nanometer CMOS technologies, process variations significantly impact the timing performance of sequential circuits which may eventually cause their malfunction. Therefore, developing a framework for designing such circuits is inevitable.
High Performance Digital Circuit Techniques
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Author : Sayed Alireza Sadrossadat
language : en
Publisher:
Release Date : 2009
High Performance Digital Circuit Techniques written by Sayed Alireza Sadrossadat and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Achieving high performance is one of the most difficult challenges in designing digital circuits. Flip-flops and adders are key blocks in most digital systems and must therefore be designed to yield highest performance. In this thesis, a new high performance serial adder is developed while power consumption is attained. Also, a statistical framework for the design of flip-flops is introduced that ensures that such sequential circuits meet timing yield under performance criteria. Firstly, a high performance serial adder is developed. The new adder is based on the idea of having a constant delay for the addition of two operands. While conventional adders exhibit logarithmic delay, the proposed adder works at a constant delay order. In addition, the new adder's hardware complexity is in a linear order with the word length, which consequently exhibits less area and power consumption as compared to conventional high performance adders. The thesis demonstrates the underlying algorithm used for the new adder and followed by simulation results. Secondly, this thesis presents a statistical framework for the design of flip-flops under process variations in order to maximize their timing yield. In nanometer CMOS technologies, process variations significantly impact the timing performance of sequential circuits which may eventually cause their malfunction. Therefore, developing a framework for designing such circuits is inevitable. Our framework generates the values of the nominal design parameters; i.e., the size of gates and transmission gates of flip-flop such that maximum timing yield is achieved for flip-flops. While previous works focused on improving the yield of flip-flops, less research was done to improve the timing yield in the presence of process variations.
Stochastic Process Variation In Deep Submicron Cmos
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Author : Amir Zjajo
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-19
Stochastic Process Variation In Deep Submicron Cmos written by Amir Zjajo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-19 with Technology & Engineering categories.
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
Integrated Circuit And System Design Power And Timing Modeling Optimization And Simulation
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Author : Lars Svensson
language : en
Publisher: Springer
Release Date : 2009-01-30
Integrated Circuit And System Design Power And Timing Modeling Optimization And Simulation written by Lars Svensson and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-01-30 with Computers categories.
Welcome to the proceedings of PATMOS 2008, the 18th in a series of int- national workshops. PATMOS 2008 was organized by INESC-ID / IST - TU Lisbon, Portugal, with sponsorship by Cadence, IBM, Chipidea, and Tecmic, and technical co-sponsorship by the IEEE. Over the years, PATMOS has evolved into an important European event, where researchers from both industry and academia discuss and investigate the emerging challenges in future and contemporary applications, design meth- ologies, and tools required for the development of the upcoming generations of integrated circuits and systems. The technical program of PATMOS 2008 c- tained state-of-the-art technical contributions, three invited talks, and a special session on recon?gurable architectures. The technical program focused on t- ing, performance and power consumption, as well as architectural aspects with particular emphasis on modeling, design, characterization, analysis and op- mization in the nanometer era. The Technical Program Committee, with the assistance of additional expert reviewers, selected the 41 papers presented at PATMOS. The papers were - ganized into 7 oral sessions (with a total of 31 papers) and 2 poster sessions (with a total of 10 papers). As is customary for the PATMOS workshops, full papers were required for review, and a minimum of three reviews were received per manuscript.
Analog Ic Reliability In Nanometer Cmos
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Author : Elie Maricau
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-01-11
Analog Ic Reliability In Nanometer Cmos written by Elie Maricau and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-01-11 with Technology & Engineering categories.
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important nanometer CMOS physical effects resulting in circuit unreliability are reviewed. Then, transistor aging compact models for circuit simulation are discussed and several methods for efficient circuit reliability simulation are explained and compared. Ultimately, the impact of transistor aging on analog circuits is studied. Aging-resilient and aging-immune circuits are identified and the impact of technology scaling is discussed. The models and simulation techniques described in the book are intended as an aid for device engineers, circuit designers and the EDA community to understand and to mitigate the impact of aging effects on nanometer CMOS ICs.