Transistor Optique
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Planar Double Gate Transistor
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Author : Amara Amara
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-01-16
Planar Double Gate Transistor written by Amara Amara and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-01-16 with Technology & Engineering categories.
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Compact Transistor Modelling For Circuit Design
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Author : Henk C. de Graaff
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Compact Transistor Modelling For Circuit Design written by Henk C. de Graaff and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.
During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.
Photo Excited Charge Collection Spectroscopy
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Author : Seongil Im
language : en
Publisher: Springer Science & Business Media
Release Date : 2014-07-08
Photo Excited Charge Collection Spectroscopy written by Seongil Im and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-07-08 with Technology & Engineering categories.
Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational.
Transistor Optique
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Author : Fouad Sabry
language : fr
Publisher: One Billion Knowledgeable
Release Date : 2022-03-02
Transistor Optique written by Fouad Sabry and has been published by One Billion Knowledgeable this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-03-02 with Technology & Engineering categories.
Qu'est-ce qu'un transistor optique Un transistor optique, également appelé commutateur optique ou modulateur de lumière, est un dispositif qui commute ou amplifie les signaux optiques. La lumière se produisant sur l'entrée d'un transistor optique modifie l'intensité de la lumière émise par la sortie du transistor tandis que la puissance de sortie est fournie par une source optique supplémentaire. Comme l'intensité du signal d'entrée peut être plus faible que celle de la source, un transistor optique amplifie le signal optique. L'appareil est l'analogue optique du transistor électronique qui constitue la base des appareils électroniques modernes. Les transistors optiques fournissent un moyen de contrôler la lumière en utilisant uniquement la lumière et ont des applications dans l'informatique optique et les réseaux de communication à fibre optique. Une telle technologie a le potentiel de dépasser la vitesse de l'électronique, tout en conservant plus d'énergie. Comment vous en bénéficierez (I) Insights et validations sur les sujets suivants : Chapitre 1 : Transistor optique Chapitre 2 : Écart de bande Chapitre 3 : Photonique Chapitre 4 : Chronologie de l'informatique et de la communication quantiques Chapitre 5 : Polariton Chapitre 6 : Effet Pockels Chapitre 7 : Réseau quantique Chapitre 8 : Calcul optique Chapitre 9 : Peigne de fréquence Chapitre 10 : Circuit intégré photonique Chapitre 11 : Photonique sur silicium Chapitre 12 : Yoshihisa Yamamoto (scientifique) Chapitre 13 : Source à photon unique Chapitre 14 : Exciton-polariton Chapitre 15 : Modèle Jaynes-Cummings-Hubbard Chapitre 16 : Calcul quantique optique linéaire Chapitre 17 : Plasmonique Chapitre 18 : Photonique quantique intégrée Chapitre 19 : Condensation de Bose-Einstein des polaritons Chapitre 20 : Source de points quantiques à photon unique Chapitre 21 : Mémoire quantique (II) Répondre aux principales questions du public sur les transistors optiques. (III) Exemples concrets d'utilisation de transistors optiques dans de nombreux domaines. (IV) 17 annexes pour expliquer, brièvement, 266 technologies émergentes dans chaque industrie pour avoir une compréhension complète à 360 degrés des technologies des transistors optiques. À qui s'adresse ce livre Professionnels, étudiants de premier cycle et diplômés, passionnés, amateurs et ceux qui veulent aller au-delà des connaissances ou des informations de base pour tout type de transistor optique.
Optical Transistor
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Author : Fouad Sabry
language : en
Publisher: One Billion Knowledgeable
Release Date : 2022-02-21
Optical Transistor written by Fouad Sabry and has been published by One Billion Knowledgeable this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-02-21 with Technology & Engineering categories.
What Is Optical Transistor An optical transistor, also known as an optical switch or a light valve, is a device that switches or amplifies optical signals. Light occurring on an optical transistor's input changes the intensity of light emitted from the transistor's output while output power is supplied by an additional optical source. Since the input signal intensity may be weaker than that of the source, an optical transistor amplifies the optical signal. The device is the optical analog of the electronic transistor that forms the basis of modern electronic devices. Optical transistors provide a means to control light using only light and has applications in optical computing and fiber-optic communication networks. Such technology has the potential to exceed the speed of electronics, while conserving more power. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Optical transistor Chapter 2: Band gap Chapter 3: Photonics Chapter 4: Timeline of quantum computing and communication Chapter 5: Polariton Chapter 6: Pockels effect Chapter 7: Quantum network Chapter 8: Optical computing Chapter 9: Frequency comb Chapter 10: Photonic integrated circuit Chapter 11: Silicon photonics Chapter 12: Yoshihisa Yamamoto (scientist) Chapter 13: Single-photon source Chapter 14: Exciton-polariton Chapter 15: Jaynes-Cummings-Hubbard model Chapter 16: Linear optical quantum computing Chapter 17: Plasmonics Chapter 18: Integrated quantum photonics Chapter 19: Bose-Einstein condensation of polaritons Chapter 20: Quantum dot single-photon source Chapter 21: Quantum memory (II) Answering the public top questions about optical transistor. (III) Real world examples for the usage of optical transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of optical transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of optical transistor.
Ultra Fast Silicon Bipolar Technology
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Author : Ludwig Treitinger
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-13
Ultra Fast Silicon Bipolar Technology written by Ludwig Treitinger and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-13 with Technology & Engineering categories.
Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Organic Field Effect Transistors
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Author : Ioannis Kymissis
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-12-25
Organic Field Effect Transistors written by Ioannis Kymissis and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-12-25 with Technology & Engineering categories.
Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.
Fundamentals Of Modern Vlsi Devices
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Author : Yuan Taur
language : en
Publisher: Cambridge University Press
Release Date : 2013-05-02
Fundamentals Of Modern Vlsi Devices written by Yuan Taur and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-05-02 with Technology & Engineering categories.
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Nanoscale Transistors
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Author : Mark Lundstrom
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-18
Nanoscale Transistors written by Mark Lundstrom and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-18 with Technology & Engineering categories.
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Fundamentals Of Modern Vlsi Devices
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Author : Yuan Taur
language : en
Publisher: Cambridge University Press
Release Date : 2021-12-02
Fundamentals Of Modern Vlsi Devices written by Yuan Taur and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-12-02 with Computers categories.
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.