A Compact Transport And Charge Model For Gan Based High Electron Mobility Transistors For Rf Applications
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A Compact Transport And Charge Model For Gan Based High Electron Mobility Transistors For Rf Applications
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Author : Ujwal Radhakrishna
language : en
Publisher:
Release Date : 2013
A Compact Transport And Charge Model For Gan Based High Electron Mobility Transistors For Rf Applications written by Ujwal Radhakrishna and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with categories.
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future performance projections from device engineering in such a rapidly evolving technology, compact device models are essential. In this thesis, a physics-based compact model is developed for short channel GaN HEMTs. The model is based on the concept of virtual source (VS) transport originally developed for scaled silicon field effect transistors. Self-consistent current and charge expressions in the model require very few parameters. The parameters have straightforward physical meanings and can be extracted through independent measurements. The model is implemented in Verilog-A and is compatible with state of the art circuit simulators. The new model is calibrated and validated with experimental DC I-V and S-parameter measurements of fabricated devices. Using the model, a projection of cut-off frequency (f-[tau]) of GaN-based HEMTs with scaling is performed to highlight performance bottlenecks.
Physics Based Virtual Source Compact Model Of Gallium Nitride High Electron Mobility Transistors
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Author : Hao Zhang
language : en
Publisher:
Release Date : 2017
Physics Based Virtual Source Compact Model Of Gallium Nitride High Electron Mobility Transistors written by Hao Zhang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Gallium nitride categories.
Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) outperform Gallium Arsenide (GaAs) and silicon based transistors for radio frequency (RF) applications in terms of output power and efficiency due to its large bandgap (~3.4 eV@300 K) and high carrier mobility property (1500 - 2300 cm^2/(V-s)). These advantages have made GaN technology a promising candidate for future high-power microwave and potential millimeter-wave applications. Current GaN HEMT models used by the industry, such as Angelov Model, EEHEMT Model and DynaFET (Dynamic FET) model, are empirical or semi-empirical. Lacking the physical description of the device operations, these empirical models are not directly scalable. Circuit design that uses the models requires multiple iterations between the device and circuit levels, becoming a lengthy and expensive process. Conversely existing physics based models, such as surface potential model, are computationally intensive and thus impractical for full scale circuit simulation and optimization. To enable efficient GaN-based RF circuit design, computationally efficient physics based compact models are required. In this thesis, a physics based Virtual Source (VS) compact model is developed for GaN HEMTs targeting RF applications. While the intrinsic current and charge model are developed based on the Virtual Source model originally proposed by MIT researchers, the gate current model and parasitic element network are proposed based on our applications with a new efficient parameter extraction flow. Both direct current (DC) of drain and gate currents and RF measurements are conducted for model parameter extractions. The new flow first extracts device parasitic resistive values based on the DC measurement of gate current. Then parameters related with the intrinsic region are determined based on the transport characteristics in the subthreshold and above threshold regimes. Finally, the parasitic resistance, capacitance and inductance values are optimized based on the S-parameter measurement. This new extraction flow provides reliable and accurate extraction for parasitic element values while achieving reasonable resolutions holistically with both DC and RF characteristics. The model is validated against measurement data in terms of drain current, gate current and scattering parameter (S-parameter). This model provides simple yet clear physical description for GaN HEMTs with only a short list of model parameters compared with other empirical or physics based models. It can be easily integrated in circuit simulators for RF circuit design.
High Frequency Gan Electronic Devices
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Author : Patrick Fay
language : en
Publisher: Springer
Release Date : 2019-08-01
High Frequency Gan Electronic Devices written by Patrick Fay and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-01 with Technology & Engineering categories.
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Parameter Extraction And Complex Nonlinear Transistor Models
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Author : Gunter Kompa
language : en
Publisher: Artech House
Release Date : 2019-12-31
Parameter Extraction And Complex Nonlinear Transistor Models written by Gunter Kompa and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-31 with Technology & Engineering categories.
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Modeling Gallium Nitride Based High Electron Mobility Transistors
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Author : Ujwal Radhakrishna
language : en
Publisher:
Release Date : 2016
Modeling Gallium Nitride Based High Electron Mobility Transistors written by Ujwal Radhakrishna and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
Gallium-Nitride-based high electron mobility transistor (HEMTs) technology is increasingly finding space in high voltage (HV) and high frequency (HF) circuit application domains. The superior breakdown electric field, high electron mobility, and high temperature performance of GaN HEMTs are the key factors for its use as HV switches in converters and active components of RF-power amplifiers. Designing circuits in both application regimes requires accurate compact device models that are grounded in physics and can describe the non-linear terminal characteristics. Currently available compact models for HEMTs are empirical and hence are lacking in physical description of the device, which becomes a handicap in understanding key device-circuit interactions and in accurate estimation of device behavior in circuits. This thesis seeks to develop a physics-based compact model for GaN HEMTs from first principles which can be used as a design tool for technology optimization to identify device-performance bottlenecks on one hand and as a tool for circuit design to investigate the impact of behavioral nuances of the device on circuit performance, on the other. Part of this thesis consists of demonstrations of the capabilities of the model to accurately predict device characteristics such as terminal DC- and pulsed-currents, charges, small-signal S-parameters, large-signal switching characteristics, load-pull, source-pull and power-sweep, inter-modulation-distortion and noise-figure of both HV- and RF-devices. The thesis also aims to tie device-physics concepts of carrier transport and charge distribution in GaN HEMTs to circuit-design through circuit-level evaluation. In the HV-application regime benchmarking is conducted against switching characteristics of a GaN DC-DC converter to understand the impact of device capacitances, field plates, temperature and charge-trapping on switching slew rates. In the RF-application regime validation is done against the large-signal characteristics of GaN-power amplifiers to study the output-power, efficiency and compression characteristics as function of class-of-operation. Noise-figure of low-noise amplifiers is tested to estimate the contributions of device-level noise sources, and validation against switching frequency and phase-noise characteristics of voltage-controlled oscillators is done to evaluate the noise performance of GaN HEMT technology. Evaluation of model-accuracy in determining the conversion-efficiency of RF-converters and linearity metrics of saturated non-linear amplifiers is carried out. The key contribution of this work is to provide a tool in the form of a physics-based compact model to device-technology-engineers and circuit-designers, who can use it to evaluate the potential strengths and weaknesses of the emerging GaN technology.
Modeling And Simulation Of Gan Based High Electron Mobility Transistors
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Author : Elias W. Faraclas
language : en
Publisher:
Release Date : 2006
Modeling And Simulation Of Gan Based High Electron Mobility Transistors written by Elias W. Faraclas and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with categories.
Hemt Technology And Applications
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Author : Trupti Ranjan Lenka
language : en
Publisher: Springer Nature
Release Date : 2022-06-23
Hemt Technology And Applications written by Trupti Ranjan Lenka and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-23 with Technology & Engineering categories.
This book covers two broad domains: state-of-the-art research in GaN HEMT and Ga2O3 HEMT. Each technology covers materials system, band engineering, modeling and simulations, fabrication techniques, and emerging applications. The book presents basic operation principles of HEMT, types of HEMT structures, and semiconductor device physics to understand the device behavior. The book presents numerical modeling of the device and TCAD simulations for high-frequency and high-power applications. The chapters include device characteristics of HEMT including 2DEG density, Id-Vgs, Id-Vds, transconductance, linearity, and C-V. The book emphasizes the state-of-the-art fabrication techniques of HEMT and circuit design for various applications in low noise amplifier, oscillator, power electronics, and biosensor applications. The book focuses on HEMT applications to meet the ever-increasing demands of the industry, innovation in terms of materials, design, modeling, simulation, processes, and circuits. The book will be primarily helpful to undergraduate/postgraduate, researchers, and practitioners in their research.
Wide Bandgap Semiconductor Electronics And Devices
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Author : Uttam Singisetti
language : en
Publisher: World Scientific
Release Date : 2019-12-10
Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-12-10 with Technology & Engineering categories.
'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.
Deeply Scaled Gan High Electron Mobility Transistors For Radio Frequency Applications
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Author : Dong Seup Lee
language : en
Publisher:
Release Date : 2014
Deeply Scaled Gan High Electron Mobility Transistors For Radio Frequency Applications written by Dong Seup Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The performance of GaN devices has increased continuously in the last two decades. However, in spite of the improvements, there are still several critical issues limiting the high frequency operation of these devices. One of the key challenges is the lower-than-expected maximum current gain cutoff frequency (fT) of deeply-scaled GaN HEMTs. The fT of the short channel devices is well below both projections from maximum frequency in the long channel devices and theoretical expectations based on material properties. Another important issue is a roll-off of the device frequency performance under wide bias range, which limits the large-signal high speed operation in the deeply-scaled devices. This thesis focuses on these two important problems and investigates them both analytically and experimentally. First, through systematic study of the transistor delay, the critical factors limiting intrinsic and extrinsic device speed are clarified and several technologies are demonstrated to overcome these limits. This has allowed the demonstration of state-of-the-art high frequency performance GaN HEMTs. Second, in order to understand the origin of the decrease in device speed at high drain and gate bias, a new extraction method and novel transistor structure have been developed, which provide an excellent guide for future device optimization.
Advanced Spice Model For Gan Hemts Asm Hemt
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Author : Sourabh Khandelwal
language : en
Publisher: Springer Nature
Release Date : 2022-01-01
Advanced Spice Model For Gan Hemts Asm Hemt written by Sourabh Khandelwal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-01-01 with Technology & Engineering categories.
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.