Actinic Imaging And Evaluation Of Phase Structures On Euv Lithography Masks

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Actinic Imaging And Evaluation Of Phase Structures On Euv Lithography Masks

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Author :
language : en
Publisher:
Release Date : 2010

Actinic Imaging And Evaluation Of Phase Structures On Euv Lithography Masks written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.

The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and complex amplitude of structures on EUV lithography masks. Many native defects commonly found on EUV reticles are difficult to detect and review accurately because they have a strong phase component. Understanding the complex amplitude of mask features is essential for predictive modeling of defect printability and defect repair. Besides printing in a stepper, the most accurate way to characterize such defects is with actinic inspection, performed at the design, EUV wavelength. Phase defect and phase structures show a distinct through-focus behavior that enables qualitative evaluation of the object phase from two or more high-resolution intensity measurements. For the first time, phase of structures and defects on EUV masks were quantitatively reconstructed based on aerial image measurements, using a modified version of a phase-retrieval algorithm developed to test optical phase shifting reticles.

Microlithography

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Author : Bruce W. Smith
language : en
Publisher: CRC Press
Release Date : 2020-05-01

Microlithography written by Bruce W. Smith and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-05-01 with Technology & Engineering categories.

The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.

Japanese Journal Of Applied Physics

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Author :
language : en
Publisher:
Release Date : 2007

Japanese Journal Of Applied Physics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Physics categories.

Journal Of The Physical Society Of Japan

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Author :
language : en
Publisher:
Release Date : 2002

Journal Of The Physical Society Of Japan written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Physics categories.

Euv Lithography

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Author : Vivek Bakshi
language : en
Publisher: Wiley-Blackwell
Release Date : 2009

Euv Lithography written by Vivek Bakshi and has been published by Wiley-Blackwell this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with Art categories.

Dr. Bakshi has compiled a thorough, clear reference text covering the important fields of EUV lithography for high-volume manufacturing. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists. The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. Each section contains worked examples, a comprehensive review of challenges, and relevant citations for those who wish to further investigate the subject matter. Dr. Bakshi succeeds in presenting sometimes unfamiliar material in a very clear manner. This book is also valuable as a teaching tool. It has become an instant classic and far surpasses others in the EUVL field.

Jjap

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Author :
language : en
Publisher:
Release Date : 2002

Jjap written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Engineering categories.

Quantitative Evaluation Of Mask Phase Defects From Through Focus Euv Aerial Images

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Author :
language : en
Publisher:
Release Date : 2011

Quantitative Evaluation Of Mask Phase Defects From Through Focus Euv Aerial Images written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.

Mask defects inspection and imaging is one of the most important issues for any pattern transfer lithography technology. This is especially true for EUV lithography where the wavelength-specific properties of masks and defects necessitate actinic inspection for a faithful prediction of defect printability and repair performance. In this paper we will present a technique to obtain a quantitative characterization of mask phase defects from EUV aerial images. We apply this technique to measure the aerial image phase of native defects on a blank mask, measured with the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV zoneplate microscope that operates at Lawrence Berkeley National Laboratory. The measured phase is compared with predictions made from AFM top-surface measurements of those defects. While amplitude defects are usually easy to recognize and quantify with standard inspection techniques like scanning electron microscopy (SEM), defects or structures that have a phase component can be much more challenging to inspect. A phase defect can originate from the substrate or from any level of the multilayer. In both cases its effect on the reflected field is not directly related to the local topography of the mask surface, but depends on the deformation of the multilayer structure. Using the AIT, we have previously showed that EUV inspection provides a faithful and reliable way to predict the appearance of mask defect on the printed wafer; but to obtain a complete characterization of the defect we need to evaluate quantitatively its phase component. While aerial imaging doesn't provide a direct measurement of the phase of the object, this information is encoded in the through focus evolution of the image intensity distribution. Recently we developed a technique that allows us to extract the complex amplitude of EUV mask defects using two aerial images from different focal planes. The method for the phase reconstruction is derived from the Gerchberg-Saxton (GS) algorithm, an iterative method that can be used to reconstruct phase and amplitude of an object from the intensity distributions in the image and in the pupil plane. The GS algorithm is equivalent to a two-parameter optimization problem and it needs exactly two constraints to be solved, namely two intensity distributions in different focal planes. In some formulations, adding any other constraint would result in an ill posed problem. On the other hand, the solution's stability and convergence time can both be improved using more information. We modified our complex amplitude reconstruction algorithm to use an arbitrary number of through focus images and we compared its performance with the previous version in terms of convergence speed, robustness and accuracy. We have demonstrated the phase-reconstruction method on native, mask-blank phase defects and compared the results with phase-predictions made from AFM data collected before and after the multilayer deposition. The method and the current results could be extremely useful for improving the modeling and understanding of native phase defects, their detectability, and their printability.

Simulation And Compensation Methods For Euv Lithography Masks With Buried Defects

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Author : Chris Heinz Clifford
language : en
Publisher:
Release Date : 2010

Simulation And Compensation Methods For Euv Lithography Masks With Buried Defects written by Chris Heinz Clifford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.

Performance Of Actinic Euvl Mask Imaging Using A Zoneplatemicroscope

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Author :
language : en
Publisher:
Release Date : 2007

Performance Of Actinic Euvl Mask Imaging Using A Zoneplatemicroscope written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.

The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with [sigma] below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.

Performance Of Actinic Euvl Mask Imaging Using A Zoneplate Microscope

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Author :
language : en
Publisher:
Release Date : 2007

Performance Of Actinic Euvl Mask Imaging Using A Zoneplate Microscope written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.

The SEMATECH Berkeley Actinic Inspection Tool (AIT) is a dual-mode, scanning and imaging extreme-ultraviolet (EUV) microscope designed for pre-commercial EUV mask research. Dramatic improvements in image quality have been made by the replacement of several critical optical elements, and the introduction of scanning illumination to improve uniformity and contrast. We report high quality actinic EUV mask imaging with resolutions as low as 100-nm half-pitch, (20-nm, 5x wafer equivalent size), and an assessment of the imaging performance based on several metrics. Modulation transfer function (MTF) measurements show high contrast imaging for features sizes close to the diffraction-limit. An investigation of the illumination coherence shows that AIT imaging is much more coherent than previously anticipated, with [sigma] below 0.2. Flare measurements with several line-widths show a flare contribution on the order of 2-3% relative intensity in dark regions above the 1.3% absorber reflectivity on the test mask used for these experiments. Astigmatism coupled with focal plane tilt are the dominant aberrations we have observed. The AIT routinely records 250-350 high-quality images in numerous through-focus series per 8-hour shift. Typical exposure times range from 0.5 seconds during alignment, to approximately 20 seconds for high-resolution images.