Characterization Methods For Submicron Mosfets
![Characterization Methods For Submicron Mosfets](https://ardhindie.com/assets/pdf.png)
DOWNLOAD
Download Characterization Methods For Submicron Mosfets PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Characterization Methods For Submicron Mosfets book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Characterization Methods For Submicron Mosfets
DOWNLOAD
Author : Hisham Haddara
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Characterization Methods For Submicron Mosfets written by Hisham Haddara and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.
Characterization Methods For Submicron Mosfets
DOWNLOAD
Author : Hisham Haddara
language : en
Publisher:
Release Date : 1996-01-31
Characterization Methods For Submicron Mosfets written by Hisham Haddara and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-31 with categories.
The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.
Cmos Rf Modeling Characterization And Applications
DOWNLOAD
Author : M. Jamal Deen
language : en
Publisher: World Scientific
Release Date : 2002
Cmos Rf Modeling Characterization And Applications written by M. Jamal Deen and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Characterization And Modeling Of Deep Submicron Mosfet S Including Frequency Effects
DOWNLOAD
Author : Jen Shuang Wong
language : en
Publisher:
Release Date : 2002
Characterization And Modeling Of Deep Submicron Mosfet S Including Frequency Effects written by Jen Shuang Wong and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Design Modelling And Characterisation Of Submicron Mosfets
DOWNLOAD
Author : Khee Yong Lim
language : en
Publisher:
Release Date : 2001
Design Modelling And Characterisation Of Submicron Mosfets written by Khee Yong Lim and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Characterization Of Two Dimensional Electrostatic Potential Profiles In Deep Submicron Mosfet Devices
DOWNLOAD
Author : Kil-soo Ko
language : en
Publisher:
Release Date : 2003
Characterization Of Two Dimensional Electrostatic Potential Profiles In Deep Submicron Mosfet Devices written by Kil-soo Ko and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Electron holography categories.
Analysis And Reliability Of Deep Submicron Mosfets
DOWNLOAD
Author : Lindor E. Henrickson
language : en
Publisher:
Release Date : 1990
Analysis And Reliability Of Deep Submicron Mosfets written by Lindor E. Henrickson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990 with categories.
Physical Modeling And Characterization Of Submicron Soi And Bulk Mosfet Devices
DOWNLOAD
Author : Mohamed Abdelgalil Imam
language : en
Publisher:
Release Date : 2000
Physical Modeling And Characterization Of Submicron Soi And Bulk Mosfet Devices written by Mohamed Abdelgalil Imam and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Metal oxide semiconductor field-effect transistors categories.
Matching Properties Of Deep Sub Micron Mos Transistors
DOWNLOAD
Author : Jeroen A. Croon
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-20
Matching Properties Of Deep Sub Micron Mos Transistors written by Jeroen A. Croon and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-20 with Technology & Engineering categories.
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
A New Inverse Modeling Based Technique For Sub 100 Nm Mosfet Characterization
DOWNLOAD
Author : Zachary Ka Fai Lee
language : en
Publisher:
Release Date : 1999
A New Inverse Modeling Based Technique For Sub 100 Nm Mosfet Characterization written by Zachary Ka Fai Lee and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.