Characterization Methods For Submicron Mosfets

DOWNLOAD

Download Characterization Methods For Submicron Mosfets PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Characterization Methods For Submicron Mosfets book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page

Characterization Methods For Submicron Mosfets

DOWNLOAD
Author : Hisham Haddara
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Characterization Methods For Submicron Mosfets written by Hisham Haddara and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

It is true that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key component in modern microelectronics. It is also true that there is a lack of comprehensive books on MOSFET characterization in gen eral. However there is more than that as to the motivation and reasons behind writing this book. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements which made the task of MOSFET characterization more and more crucial as well as difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples of these phenomena. Therefore, it was inevitable to develop new models and new characterization methods or at least adapt the existing ones to cope with the special nature of these new phenomena. The need for more deep and extensive characterization of MOSFET param eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi tive to the properties of its Si - Si0 interface. MOS transistors have crossed 2 the borders of high speed electronics where they operate at GHz frequencies. Moreover, MOSFETs are now widely employed in the subthreshold regime in neural circuits and biomedical applications.

Cmos Rf Modeling Characterization And Applications

DOWNLOAD
Author : M. Jamal Deen
language : en
Publisher: World Scientific
Release Date : 2002

Cmos Rf Modeling Characterization And Applications written by M. Jamal Deen and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Science categories.

CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.

Characterization Methods For Submicron Mosfets

DOWNLOAD
Author : Hisham Haddara
language : en
Publisher:
Release Date : 1996-01-31

Characterization Methods For Submicron Mosfets written by Hisham Haddara and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-01-31 with categories.

The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.

Leakage Current And Defect Characterization Of Short Channel Mosfets

DOWNLOAD
Author : Guntrade Roll
language : en
Publisher: Logos Verlag Berlin GmbH
Release Date : 2012

Leakage Current And Defect Characterization Of Short Channel Mosfets written by Guntrade Roll and has been published by Logos Verlag Berlin GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Science categories.

The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.

Progress In Soi Structures And Devices Operating At Extreme Conditions

DOWNLOAD
Author : Francis Balestra
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Progress In Soi Structures And Devices Operating At Extreme Conditions written by Francis Balestra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

Symbolic Analysis In Analog Integrated Circuit Design

DOWNLOAD
Author : Henrik Floberg
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Symbolic Analysis In Analog Integrated Circuit Design written by Henrik Floberg and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Symbolic Analysis in Analog Integrated Circuit Design provides an introduction to computer-aided circuit analysis and presents systematic methods for solving linear (i.e. small-signal) and nonlinear circuit problems, which are illustrated by concrete examples. Computer-aided symbolic circuit analysis is useful in analog integrated circuit design. Analytic expressions for the network transfer functions contain information that is not provided by a numerical simulation result. However, these expressions are generally extremely long and difficult to interpret; therefore, it is necessary to be able to approximate them guided by the magnitude of the individual circuit parameters. Engineering has been described as `the art of making approximations'. The inclusion of symbolic analysis in analog circuit design reduces the implied risk of ambiguity during the approximation process. A systematic method based on the nullor concept is used to obtain the basic feedback transistor amplifier configurations. Approximate expressions for the locations of poles and zeros for linear networks are obtained using the extended pole-splitting technique. An unusual feature in Symbolic Analysis in Analog Integrated Circuit Design is the consistent use of the transadmittance element with finite (linear or nonlinear) or infinite (i.e. nullor) gain as the only requisite circuit element. The describing function method is used to obtain approximate symbolic expressions for the harmonic distortion generated by a soft or hard transconductance nonlinearity embedded in an arbitrary linear network. The design and implementation of a program (i.e. CASCA) for symbolic analysis of time-continuous networks is described. The algorithms can also be used to solve other linear problems, e.g. the analysis of time-discrete switched-capacitor networks. Symbolic Analysis in Analog Integrated Circuit Design serves as an excellent resource for students and researchers as well as for industry designers who want to familiarize themselves with circuit analysis. This book may also be used for advanced courses on the subject.

Distortion Analysis Of Analog Integrated Circuits

DOWNLOAD
Author : Piet Wambacq
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Distortion Analysis Of Analog Integrated Circuits written by Piet Wambacq and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.

The analysis and prediction of nonlinear behavior in electronic circuits has long been a topic of concern for analog circuit designers. The recent explosion of interest in portable electronics such as cellular telephones, cordless telephones and other applications has served to reinforce the importance of these issues. The need now often arises to predict and optimize the distortion performance of diverse electronic circuit configurations operating in the gigahertz frequency range, where nonlinear reactive effects often dominate. However, there have historically been few sources available from which design engineers could obtain information on analysis tech niques suitable for tackling these important problems. I am sure that the analog circuit design community will thus welcome this work by Dr. Wambacq and Professor Sansen as a major contribution to the analog circuit design literature in the area of distortion analysis of electronic circuits. I am personally looking forward to having a copy readily available for reference when designing integrated circuits for communication systems.

Switched Current Design And Implementation Of Oversampling A D Converters

DOWNLOAD
Author : Nianxiong Tan
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Switched Current Design And Implementation Of Oversampling A D Converters written by Nianxiong Tan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Switched-Current Design and Implementation of Oversampling A/D Converters discusses the switched-current (SI) technique and its application in oversampling A/D converters design. The SI technique is an analog sampled-data technique that fully exploits the digital CMOS process. Compared with the traditional switched-capacitor (SC) technique, the SI technique has both pros and cons that are highlighted in the book. With the consideration of similarity and difference of SI and SC techniques, oversampling A/D converter architectures are tailored and optimized for SI design and implementation in the book. Switched-Current Design and Implementation of Oversampling A/D Converters emphasizes the practical aspects of SI circuits without tedious mathematical derivations, and is full of circuit design and implementation examples. There are more than 10 different chips included in the book, demonstrating the high-speed (over 100 MHz) and ultra-low-voltage (1.2 V) operation of SI circuits and systems in standard digital CMOS processes. Therefore, the book is of special value as a practical guide for designing SI circuits and SI oversampling A/D converters. Switched-Current Design and Implementation of Oversampling A/D Converters serves as an excellent reference for analog designers, especially A/D converter designers, and is of interest to digital designers for real-time signal processing who need A/D interfaces. The book may also be used as a text for advanced courses on the subject.

Matching Properties Of Deep Sub Micron Mos Transistors

DOWNLOAD
Author : Jeroen A. Croon
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-20

Matching Properties Of Deep Sub Micron Mos Transistors written by Jeroen A. Croon and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-20 with Technology & Engineering categories.

Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Analysis And Design Of Mosfets

DOWNLOAD
Author : Juin Jei Liou
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Analysis And Design Of Mosfets written by Juin Jei Liou and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.