Matching Properties Of Deep Sub Micron Mos Transistors
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Matching Properties Of Deep Sub Micron Mos Transistors
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Author : Jeroen A. Croon
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-03-24
Matching Properties Of Deep Sub Micron Mos Transistors written by Jeroen A. Croon and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-03-24 with Business & Economics categories.
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Matching Properties Of Deep Sub Micron Mos Transistors
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Author : Jeroen A. Croon
language : en
Publisher: Springer
Release Date : 2008-11-01
Matching Properties Of Deep Sub Micron Mos Transistors written by Jeroen A. Croon and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-01 with Technology & Engineering categories.
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Matching Properties Of Deep Sub Micron Mos Transistors
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Author : Jeroen A. Croon
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-20
Matching Properties Of Deep Sub Micron Mos Transistors written by Jeroen A. Croon and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-20 with Technology & Engineering categories.
Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Ulsi Front End Technology Covering From The First Semiconductor Paper To Cmos Finfet Technology
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Author : Wai Shing Lau
language : en
Publisher: World Scientific
Release Date : 2017-08-23
Ulsi Front End Technology Covering From The First Semiconductor Paper To Cmos Finfet Technology written by Wai Shing Lau and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-08-23 with Technology & Engineering categories.
The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book.
Nanometer Variation Tolerant Sram
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Author : Mohamed Abu Rahma
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-09-26
Nanometer Variation Tolerant Sram written by Mohamed Abu Rahma and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-26 with Technology & Engineering categories.
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
Stochastic Process Variation In Deep Submicron Cmos
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Author : Amir Zjajo
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-19
Stochastic Process Variation In Deep Submicron Cmos written by Amir Zjajo and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-19 with Technology & Engineering categories.
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits. In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
Iq Calibration Techniques For Cmos Radio Transceivers
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Author : Sao-Jie Chen
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-09-22
Iq Calibration Techniques For Cmos Radio Transceivers written by Sao-Jie Chen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-09-22 with Technology & Engineering categories.
The 802.11n wireless standard uses 64-state quadrature amplitude modulation (64-QAM) to achieve higher spectral efficiency. Consequently, the transmitter and receiver require a higher signal to noise ratio with the same level of error rate performance. This book offers a fully-analog compensation technique without baseband circuitry to control the calibration process. Using an 802.11g transceiver design as an example, it describes in detail an auto-calibration mechanism for I/Q gains and phases imbalance.
High Speed Photodiodes In Standard Cmos Technology
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Author : Sasa Radovanovic
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-10-11
High Speed Photodiodes In Standard Cmos Technology written by Sasa Radovanovic and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-10-11 with Technology & Engineering categories.
High-speed Photodiodes in Standard CMOS Technology describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important , and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high. The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks.
Low Power Low Voltage Sigma Delta Modulators In Nanometer Cmos
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Author : Libin Yao
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-02-06
Low Power Low Voltage Sigma Delta Modulators In Nanometer Cmos written by Libin Yao and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-02-06 with Technology & Engineering categories.
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Design Of Very High Frequency Multirate Switched Capacitor Circuits
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Author : Seng-Pan U
language : en
Publisher: Springer Science & Business Media
Release Date : 2006
Design Of Very High Frequency Multirate Switched Capacitor Circuits written by Seng-Pan U and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Computers categories.
Design of Very High-Frequency Multirate Switched-Capacitor Circuits presents the theory and the corresponding CMOS implementation of the novel multirate sampled-data analog interpolation technique which has its great potential on very high-frequency analog frond-end filtering due to its inherent dual advantage of reducing the speed of data-converters and DSP core together with the specification relaxation of the post continuous-time filtering. This technique completely eliminates the traditional phenomenon of sampled-and-hold frequency-shaping at the lower input sampling rate. Also, in order to tackle physical IC imperfections at very high frequency, the state-of-the-art circuit design and layout techniques for high-speed Switched-Capacitor (SC) circuits are comprehensively discussed: -Optimum circuit architecture tradeoff analysis -Simple speed and power trade-off analysis of active elements -High-order filtering response accuracy with respect to capacitor-ratio mismatches -Time-interleaved effect with respect to gain and offset mismatch -Time-interleaved effect with respect to timing-skew and random jitter with non-uniformly holding -Stage noise analysis and allocation scheme -Substrate and supply noise reduction -Gain-and offset-compensation techniques -High-bandwidth low-power amplifier design and layout -Very low timing-skew multiphase generation Two tailor-made optimum design examples in CMOS are presented. The first one achieves a 3-stage 8-fold SC interpolating filter with 5.5MHz bandwidth and 108MHz output sampling rate for a NTSC/PAL CCIR 601 digital video at 3 V. Another is a 15-tap 57MHz SC FIR bandpass interpolating filter with 4-fold sampling rate increase to 320MHz and the first-time embedded frequency band up-translation for DDFS system at 2.5V. The corresponding chip prototype achieves so far the highest operating frequency, highest filter order and highest center frequency with highest dynamic range under the lowest supply voltage when compared to the previously reported high-frequency SC filters in CMOS.