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Electromigration In Ulsi Interconnections


Electromigration In Ulsi Interconnections
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Electromigration In Ulsi Interconnections


Electromigration In Ulsi Interconnections
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Author : Cher Ming Tan
language : en
Publisher: World Scientific
Release Date : 2010

Electromigration In Ulsi Interconnections written by Cher Ming Tan and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Technology & Engineering categories.


Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.



Electromigration In Ulsi Interconnections


Electromigration In Ulsi Interconnections
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Author : Cher Ming Tan
language : en
Publisher: World Scientific
Release Date : 2010-06-25

Electromigration In Ulsi Interconnections written by Cher Ming Tan and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06-25 with Technology & Engineering categories.


Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.



Applications Of Finite Element Methods For Reliability Studies On Ulsi Interconnections


Applications Of Finite Element Methods For Reliability Studies On Ulsi Interconnections
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Author : Cher Ming Tan
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-03-28

Applications Of Finite Element Methods For Reliability Studies On Ulsi Interconnections written by Cher Ming Tan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-03-28 with Science categories.


Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.



Advanced Interconnects For Ulsi Technology


Advanced Interconnects For Ulsi Technology
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Author : Mikhail Baklanov
language : en
Publisher: John Wiley & Sons
Release Date : 2012-04-02

Advanced Interconnects For Ulsi Technology written by Mikhail Baklanov and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-04-02 with Technology & Engineering categories.


Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.



Graphene And Vlsi Interconnects


Graphene And Vlsi Interconnects
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Author : Cher-Ming Tan
language : en
Publisher: CRC Press
Release Date : 2021-11-24

Graphene And Vlsi Interconnects written by Cher-Ming Tan and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-11-24 with Science categories.


Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.



Electromigration In Ulsi Interconnects


Electromigration In Ulsi Interconnects
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Author : Cher Ming Tan
language : en
Publisher:
Release Date : 2007

Electromigration In Ulsi Interconnects written by Cher Ming Tan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.




Interconnect And Contact Metallization For Ulsi


Interconnect And Contact Metallization For Ulsi
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Author : G. S. Mathad
language : en
Publisher: The Electrochemical Society
Release Date : 2000

Interconnect And Contact Metallization For Ulsi written by G. S. Mathad and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.




Electromigration Modeling At Circuit Layout Level


Electromigration Modeling At Circuit Layout Level
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Author : Cher Ming Tan
language : en
Publisher: Springer
Release Date : 2013-05-04

Electromigration Modeling At Circuit Layout Level written by Cher Ming Tan and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-05-04 with Technology & Engineering categories.


Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.



Electromigration Modeling At Circuit Layout Level


Electromigration Modeling At Circuit Layout Level
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Author : Cher Ming Tan
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-16

Electromigration Modeling At Circuit Layout Level written by Cher Ming Tan and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-16 with Technology & Engineering categories.


Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.



Fundamentals Of Electromigration Aware Integrated Circuit Design


Fundamentals Of Electromigration Aware Integrated Circuit Design
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Author : JENS. ROTHE LIENIG (SUSANN. THIELE, MATTHIAS.)
language : en
Publisher:
Release Date : 2025-04-19

Fundamentals Of Electromigration Aware Integrated Circuit Design written by JENS. ROTHE LIENIG (SUSANN. THIELE, MATTHIAS.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-19 with Computers categories.