Hemts And Hbts

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Hemts And Hbts

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Author : Fazal Ali
language : en
Publisher: Artech House Microwave Library
Release Date : 1991

Hemts And Hbts written by Fazal Ali and has been published by Artech House Microwave Library this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.

Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.

Electrical And Thermal Characterization Of Mesfets Hemts And Hbts

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Author : Robert Anholt
language : en
Publisher: Artech House Microwave Library
Release Date : 1995

Electrical And Thermal Characterization Of Mesfets Hemts And Hbts written by Robert Anholt and has been published by Artech House Microwave Library this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Science categories.

Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.

Handbook Of Terahertz Technologies

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Author : Ho-Jin Song
language : en
Publisher: CRC Press
Release Date : 2015-04-15

Handbook Of Terahertz Technologies written by Ho-Jin Song and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-04-15 with Science categories.

Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has trigg

Analysis And Simulation Of Heterostructure Devices

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Author : Vassil Palankovski
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Analysis And Simulation Of Heterostructure Devices written by Vassil Palankovski and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.

Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.

Fundamentals Of Rf And Microwave Transistor Amplifiers

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Author : Inder Bahl
language : en
Publisher: John Wiley & Sons
Release Date : 2009-06-17

Fundamentals Of Rf And Microwave Transistor Amplifiers written by Inder Bahl and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-06-17 with Technology & Engineering categories.

A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.

Defect Recognition And Image Processing In Semiconductors 1997

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Author : J. Doneker
language : en
Publisher: Routledge
Release Date : 2017-11-22

Defect Recognition And Image Processing In Semiconductors 1997 written by J. Doneker and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-11-22 with Science categories.

Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.

Ulsi Process Integration 5

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Author : Cor L. Claeys
language : en
Publisher: The Electrochemical Society
Release Date : 2007

Ulsi Process Integration 5 written by Cor L. Claeys and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.

The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.

Pseudomorphic Hemt Technology And Applications

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Author : R.L. Ross
language : en
Publisher: Springer Science & Business Media
Release Date : 1996-02-29

Pseudomorphic Hemt Technology And Applications written by R.L. Ross and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-02-29 with Science categories.

PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications. Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive technologies. The successful team in a globally competitive market is one in which the solid-state scientist, circuit designer, system engineer and technical manager are cognizant of those considerations and requirements that influence each other's function. This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications. Readers with a broad range of specialities in one or more of the areas of materials, processing, device physics, circuit design, system design and marketing will be introduced quickly to important basic concepts and techniques. The specialist who has specific PHEMT experience will benefit from the broad range of topics covered and the open discussion of practical issues. Finally, the publication offers an additional benefit, in that it presents a broad scope to both the researcher and manager, both of whom must be aware and educated to remain relevant in an ever-expanding technology base.

Compound Semiconductor Integrated Circuits

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Author : Tho T. Vu
language : en
Publisher: World Scientific
Release Date : 2003

Compound Semiconductor Integrated Circuits written by Tho T. Vu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.

This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.

Gan Based Materials And Devices

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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004

Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.