Physics Of High Speed Transistors

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Physics Of High Speed Transistors

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Author : Juras Pozela
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29

Physics Of High Speed Transistors written by Juras Pozela and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

Advanced High Speed Devices

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Author : Michael S Shur
language : en
Publisher: World Scientific
Release Date : 2009-12-10

Advanced High Speed Devices written by Michael S Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-12-10 with Technology & Engineering categories.

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.

Handbook For Iii V High Electron Mobility Transistor Technologies

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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14

Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

High Performance Devices Proceedings Of The 2004 Ieee Lester Eastman Conference

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Author : Robert Leoni
language : en
Publisher: World Scientific
Release Date : 2005-04-26

High Performance Devices Proceedings Of The 2004 Ieee Lester Eastman Conference written by Robert Leoni and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-04-26 with Technology & Engineering categories.

This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.

High Speed Integrated Circuit Technology Towards 100 Ghz Logic

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Author : Mark Rodwell
language : en
Publisher: World Scientific
Release Date : 2001-04-24

High Speed Integrated Circuit Technology Towards 100 Ghz Logic written by Mark Rodwell and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-04-24 with Technology & Engineering categories.

This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology.

Rapid Thermal Processing Of Semiconductors

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Author : Victor E. Borisenko
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-22

Rapid Thermal Processing Of Semiconductors written by Victor E. Borisenko and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-22 with Technology & Engineering categories.

Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.

Pulse And Synchro Photon Electronics

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Author : Ferdinandas Vaitiekūnas
language : en
Publisher: Cambridge Scholars Publishing
Release Date : 2023-03-28

Pulse And Synchro Photon Electronics written by Ferdinandas Vaitiekūnas and has been published by Cambridge Scholars Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-03-28 with Technology & Engineering categories.

This book presents the theory of large-signal nonlinear impulse processes occurring in bipolar and field-effect transistors with a Schottky gate, collapse TRAPATT and tunnel diodes, superlattices, and double heterojunction lasers. It evaluates the maximum speed of impulse operation of these elements and experimentally constructs the generation of pulse oscillations with a repetition frequency of up to 1, 2 and 4 GHz. Original or adapted methods of mathematical modeling of processes provide an opportunity to obtain quantitative dependencies of generated pulse parameters, while the book also details the synchro-photon effect. In addition, as shown here, when a semiconductor element is switched on by an electric pulse, and at the same time a pulse of photons synchronously illuminates it, an effect occurs which increases the switching speed of the element by an order of magnitude. At the same time, the switching transient characteristic is shortened by 10 times or more. After applying this effect in pulse generators in the gigahertz frequency range, an increase in the repetition frequency of the generated oscillations is possible.

Field Emission In Vacuum Microelectronics

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Author : George N. Fursey
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-12-24

Field Emission In Vacuum Microelectronics written by George N. Fursey and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-12-24 with Science categories.

Field emission is a phenomenon described by quantum mechanics. Its emission capability is millions times higher than that of any other known types of electron emission. Nowadays this phenomenon is experiencing a new life due to wonderful applications in the atomic resolution microscopy, in electronic holography, and in the vacuum micro- and nanoelectronics in general. The main field emission properties, and some most remarkable experimental facts and applications, are described in this book.

High Speed Heterostructure Devices

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Author : Patrick Roblin
language : en
Publisher: Cambridge University Press
Release Date : 2002-03-07

High Speed Heterostructure Devices written by Patrick Roblin and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-03-07 with Technology & Engineering categories.

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

Field Effect Transistors A Comprehensive Overview

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Author : Pouya Valizadeh
language : en
Publisher: John Wiley & Sons
Release Date : 2016-02-01

Field Effect Transistors A Comprehensive Overview written by Pouya Valizadeh and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-02-01 with Technology & Engineering categories.

This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.