Porous Low Dielectric Constant Material For Semiconductor Microelectronics
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Porous Low Dielectric Constant Material For Semiconductor Microelectronics
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Author : Yi-Lung Cheng
language : en
Publisher:
Release Date : 2022
Porous Low Dielectric Constant Material For Semiconductor Microelectronics written by Yi-Lung Cheng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022 with Electronic books categories.
To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter- and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.
Interlayer Dielectrics For Semiconductor Technologies
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Author : Shyam P Muraka
language : en
Publisher: Elsevier
Release Date : 2003-10-13
Interlayer Dielectrics For Semiconductor Technologies written by Shyam P Muraka and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-13 with Science categories.
Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. Manipulating the materials and their properties at atomic dimensions has become a must. This book presents the case of interlayer dielectrics materials whilst considering these challenges. Interlayer Dielectrics for Semiconductor Technologies cover the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation, followed by the discussion of different materials including those with high dielctric constants and those useful for waveguide applications in optical communications on the chip and the package. * Brings together for the FIRST time the science and technology of interlayer deilectrics materials, in one volume * written by renowned experts in the field * Provides an up-to-date starting point in this young research field.
Dielectric Films For Advanced Microelectronics
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Author : Mikhail Baklanov
language : en
Publisher: John Wiley & Sons
Release Date : 2007-04-04
Dielectric Films For Advanced Microelectronics written by Mikhail Baklanov and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-04 with Technology & Engineering categories.
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.
Low Dielectric Constant Materials For Ic Applications
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Author : Paul S. Ho
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Low Dielectric Constant Materials For Ic Applications written by Paul S. Ho and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for
Low Dielectric Constant Materials V Volume 565
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Author : John Hummel
language : en
Publisher: Cambridge University Press
Release Date : 2000-01-12
Low Dielectric Constant Materials V Volume 565 written by John Hummel and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-01-12 with Technology & Engineering categories.
Interest in developing low-dielectric constant materials is driven by requirements from the microelectronics sector to improve performance in interconnections by reducing parasitic capacitance and cross talk. The continuing increase in density of semiconductor devices is becoming limited by the dielectric properties of the insulator which threatens to slow the rate of productivity. The requirement for dielectric constant is rapidly approaching an e value of 2.0, with continued improvement sought even below this level to maintain this progression, commonly known as Moore's Law. Synthetic methods of obtaining materials in this range are addressed in this book. The materials solution to the interconnect problem - changing the insulator to lower the dielectric constant from 4.0, the e of silicon dioxide - introduces a host of reliability concerns, as well as changes to the process of manufacturing semiconductor devices. Topics include: porous films - organic and inorganic; porous films - organic/low-k integration; low-k integration; low-k/advanced interconnect; low-dielectric constant materials and applications in microelectronics and low-k film property/integration.
Low Dielectric Constant Materials V
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Author : John Hummel
language : en
Publisher: Cambridge University Press
Release Date : 2014-06-05
Low Dielectric Constant Materials V written by John Hummel and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-06-05 with Technology & Engineering categories.
Interest in developing low-dielectric constant materials is driven by requirements from the microelectronics sector to improve performance in interconnections by reducing parasitic capacitance and cross talk. The continuing increase in density of semiconductor devices is becoming limited by the dielectric properties of the insulator which threatens to slow the rate of productivity. The requirement for dielectric constant is rapidly approaching an e value of 2.0, with continued improvement sought even below this level to maintain this progression, commonly known as Moore's Law. Synthetic methods of obtaining materials in this range are addressed in this book. The materials solution to the interconnect problem - changing the insulator to lower the dielectric constant from 4.0, the e of silicon dioxide - introduces a host of reliability concerns, as well as changes to the process of manufacturing semiconductor devices. Topics include: porous films - organic and inorganic; porous films - organic/low-k integration; low-k integration; low-k/advanced interconnect; low-dielectric constant materials and applications in microelectronics and low-k film property/integration.
Low Dielectric Constant Materials Ii Volume 443
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Author : André Lagendijk
language : en
Publisher:
Release Date : 1997-08-19
Low Dielectric Constant Materials Ii Volume 443 written by André Lagendijk and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-08-19 with Technology & Engineering categories.
Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.
Low Dielectric Constant Materials
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Author :
language : en
Publisher:
Release Date : 1998
Low Dielectric Constant Materials written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Electric insulators and insulation categories.
Low Dielectric Constant Materials V
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Author : John Hummel
language : en
Publisher: Cambridge University Press
Release Date : 2000-01-12
Low Dielectric Constant Materials V written by John Hummel and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-01-12 with Technology & Engineering categories.
Interest in developing low-dielectric constant materials is driven by requirements from the microelectronics sector to improve performance in interconnections by reducing parasitic capacitance and cross talk. The continuing increase in density of semiconductor devices is becoming limited by the dielectric properties of the insulator which threatens to slow the rate of productivity. The requirement for dielectric constant is rapidly approaching an e value of 2.0, with continued improvement sought even below this level to maintain this progression, commonly known as Moore's Law. Synthetic methods of obtaining materials in this range are addressed in this book. The materials solution to the interconnect problem - changing the insulator to lower the dielectric constant from 4.0, the e of silicon dioxide - introduces a host of reliability concerns, as well as changes to the process of manufacturing semiconductor devices. Topics include: porous films - organic and inorganic; porous films - organic/low-k integration; low-k integration; low-k/advanced interconnect; low-dielectric constant materials and applications in microelectronics and low-k film property/integration.
Low And High Dielectric Constant Materials
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Author : Mark J. Lododa
language : en
Publisher: The Electrochemical Society
Release Date : 2000
Low And High Dielectric Constant Materials written by Mark J. Lododa and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Technology & Engineering categories.
Contains papers from a May 2000 symposium, representing the state of the art in areas of dielectric materials science and process integration. Papers are arranged in sections on low and high dielectric constant materials, covering topics such as ammonia plasma passivation effects on properties of post-CMP low-k HSQ, characterization of ashing effects on low-k dielectric films, and electron beam curing of thin film polymer dielectrics. Other subjects include characterization of high-k dielectrics using the non-contact surface charge profiler method, and processing effects and electrical evaluation of ZrO2 formed by RTP oxidation of Zr. Loboda is affiliated with Dow Corning Corporation. c. Book News Inc.