Progress In Semiconductors Ii Electronic And Optoelectronic Applications Volume 744
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Progress In Semiconductors Ii Electronic And Optoelectronic Applications Volume 744
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Author : B. D. Weaver
language : en
Publisher:
Release Date : 2003-04-16
Progress In Semiconductors Ii Electronic And Optoelectronic Applications Volume 744 written by B. D. Weaver and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-04-16 with Technology & Engineering categories.
Recent years have witnessed dramatic success in the development of semiconductor materials and related quantum structures for applications in electronics and optoelectronics. Progress has also been made in manufacturable (low cost, high volume) growth and processing of semiconductor materials for such device structures. Novel approaches have been proposed to integrate compound semiconductor devices with conventional silicon processing. This book provides a comprehensive overview of the progress on growth, properties and processing of semiconductor materials and quantum structures, as well to underscore the progress on devices such as transistors, light sources, detectors and modulators. Brought to maturity, these devices will likely see widespread application in infrared imaging, chemical and biological sensing, surveillance, short links, space-based applications, solar cells, high-bandwidth communications, and more. Topics include: electronic devices; Si/Ge devices and technology; zinc oxide and related compounds; emitters, lasers and photovoltaics; nanostructures; innovative materials and devices; detectors; and III-nitride materials and devices.
New Applications For Wide Bandgap Semiconductors Volume 764
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003-09-29
New Applications For Wide Bandgap Semiconductors Volume 764 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-09-29 with Technology & Engineering categories.
Wide-bandgap semiconductors such as SiC, GaN and related alloys, BN and related alloys, ZnGeSiN2, ZnO, and others continue to find new applications in solid-state lighting, sensors, filters, high-power electronics, biological detection, and spintronics. Improved bulk and epitaxial growth, processing, device design, and understanding of the physics of transport in heterostructures are all necessary for realization of these new technologies. The papers in this book span a range of subjects from material growth and characterization to the processing and application of devices in the electronic, as well as the optoelectronic, fields. Topics include: special invited papers; growth, processing and devices; novel applications for wide-bandgap semiconductors; oxides, heterostructures and devices; processing and devices and emerging areas.
Gan And Related Alloys 2002 Volume 743
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003-06-02
Gan And Related Alloys 2002 Volume 743 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-06-02 with Science categories.
This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Novel Materials And Processes For Advanced Cmos Volume 745
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Author : Mark I. Gardner
language : en
Publisher:
Release Date : 2003-03-25
Novel Materials And Processes For Advanced Cmos Volume 745 written by Mark I. Gardner and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-03-25 with Computers categories.
Progress in MOS integrated-circuit technology is largely driven by the ability to dimensionally scale the constituent components of individual devices and their associated interconnections. Given a set of materials with fixed properties, this scaling is finite and its predicted limits are rapidly approaching. The International Technology Roadmap for Semiconductors establishes the pace at which this scaling occurs and identifies many of the technological challenges ahead. This volume assembles representatives from the fields of materials science, physics, electrical and chemical engineering to provide an insightful review of current technology and understanding. Specifically, the intent is to discuss materials issues stemming from device scaling to sub-100nm technology nodes. Topics include: high-k characterization; atomic layer deposition; gate metal materials and integration; contacts and ultrashallow junction formation; theory and modeling and crystalline oxides for gate dielectrics.
Membranes Volume 752
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003-04-11
Membranes Volume 752 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-04-11 with Technology & Engineering categories.
The objective of this 2003 volume from the Materials Research Society is twofold - to provide an overview of advances in membrane science and technology and to enhance communication among membrane researchers from a variety of disciplines including chemistry, biology, biotechnology, chemical engineering and materials science. Membranes can be used for inert or reactive separations in a variety of fields including gas purification, water treatment, energy storage and conversion, bio-technology and biomedicine. The book brings together scientists involved in the entire spectrum of modern approaches to membrane science and technology to address synthesis, characterization and transport properties and their use in established and emerging applications. Topics include: membrane synthesis and preparation; surface modification and additives; hybrid and composite membranes; membrane characterization; transport phenomena in membranes; charged membranes and ion transfer; gas permeation and separation; pervaporation and vapor permeation; dense membranes for hydrogen separation; applications in biotechnology and biomedicine; and membrane R&D for industrial and emerging applications.
Rare Earth And Transition Metal Doping Of Semiconductor Materials
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Author : Volkmar Dierolf
language : en
Publisher: Woodhead Publishing
Release Date : 2016-01-23
Rare Earth And Transition Metal Doping Of Semiconductor Materials written by Volkmar Dierolf and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-01-23 with Science categories.
Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics
Chemical Mechanical Planarization Volume 767
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Author : Duane S. Boning
language : en
Publisher:
Release Date : 2003-08-27
Chemical Mechanical Planarization Volume 767 written by Duane S. Boning and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-08-27 with Technology & Engineering categories.
Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.
Crystalline Oxide Volume 747
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Author : D. G. Schlom
language : en
Publisher:
Release Date : 2003-06-23
Crystalline Oxide Volume 747 written by D. G. Schlom and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-06-23 with Technology & Engineering categories.
This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.
Solid State Ionics 2002 Volume 756
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Author : Philippe Knauth
language : en
Publisher: Cambridge University Press
Release Date : 2003-04-17
Solid State Ionics 2002 Volume 756 written by Philippe Knauth and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-04-17 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Cmos Front End Materials And Process Technology Volume 765
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Author : Materials Research Society. Meeting
language : en
Publisher:
Release Date : 2003-09-12
Cmos Front End Materials And Process Technology Volume 765 written by Materials Research Society. Meeting and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-09-12 with Computers categories.
In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.