Robust Sram Designs And Analysis
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Robust Sram Designs And Analysis
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Author : Jawar Singh
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-08-01
Robust Sram Designs And Analysis written by Jawar Singh and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-01 with Technology & Engineering categories.
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Robust Sram Designs And Analysis
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Author : Jawar Singh
language : en
Publisher: Springer
Release Date : 2014-08-08
Robust Sram Designs And Analysis written by Jawar Singh and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-08-08 with Technology & Engineering categories.
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.
Energy Efficient And Reliable Embedded Nanoscale Sram Design
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Author : Bhupendra Singh Reniwal
language : en
Publisher: CRC Press
Release Date : 2023-11-29
Energy Efficient And Reliable Embedded Nanoscale Sram Design written by Bhupendra Singh Reniwal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-29 with Technology & Engineering categories.
This reference text covers a wide spectrum for designing robust embedded memory and peripheral circuitry. It will serve as a useful text for senior undergraduate and graduate students and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discusses low-power design methodologies for static random-access memory (SRAM) Covers radiation-hardened SRAM design for aerospace applications Focuses on various reliability issues that are faced by submicron technologies Exhibits more stable memory topologies Nanoscale technologies unveiled significant challenges to the design of energy- efficient and reliable SRAMs. This reference text investigates the impact of process variation, leakage, aging, soft errors and related reliability issues in embedded memory and periphery circuitry. The text adopts a unique way to explain the SRAM bitcell, array design, and analysis of its design parameters to meet the sub-nano-regime challenges for complementary metal-oxide semiconductor devices. It comprehensively covers low- power-design methodologies for SRAM, exhibits more stable memory topologies, and radiation-hardened SRAM design for aerospace applications. Every chapter includes a glossary, highlights, a question bank, and problems. The text will serve as a useful text for senior undergraduate students, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. Discussing comprehensive studies of variability-induced failure mechanism in sense amplifiers and power, delay, and read yield trade-offs, this reference text will serve as a useful text for senior undergraduate, graduate students, and professionals in areas including electronics and communications engineering, electrical engineering, mechanical engineering, and aerospace engineering. It covers the development of robust SRAMs, well suited for low-power multi-core processors for wireless sensors node, battery-operated portable devices, personal health care assistants, and smart Internet of Things applications.
Circuit Technology Co Optimization Of Sram Design In Advanced Cmos Nodes
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Author : Hsiao-Hsuan Liu
language : en
Publisher: Springer Nature
Release Date : 2024-12-20
Circuit Technology Co Optimization Of Sram Design In Advanced Cmos Nodes written by Hsiao-Hsuan Liu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-12-20 with Computers categories.
Modern computing engines—CPUs, GPUs, and NPUs—require extensive SRAM for cache designs, driven by the increasing demand for higher density, performance, and energy efficiency. This book delves into two primary areas within ultra-scaled technology nodes: (1) advancing SRAM bitcell scaling and (2) exploring innovative subarray designs to enhance power-performance-area (PPA) metrics across technology nodes. The first part of the book utilizes a bottom-up design-technology co-optimization (DTCO) approach, employing a dedicated PPA simulation framework to evaluate and identify the most promising strategies for SRAM bitcell scaling. It offers a comprehensive examination of SRAM bitcell scaling beyond 1 nm node, outlining a structured research cycle that includes identifying scaling bottlenecks, developing cutting-edge architectures with complementary field-effect transistor (CFET) technology, and addressing challenges such as process integration and routing complexities. Additionally, this book introduces a novel write margin methodology to better address the risks of write failures in resistance-dominated nodes. This methodology accounts for time-dependent parasitic bitline effects and incorporates timing setup of write-assist techniques to prevent underestimating the yield loss. In the second part, the focus shifts to a top-down DTCO approach due to the diminishing returns of bitcell scaling beyond 5 Å node at the macro level. As technology scales, increasing resistance and capacitance (RC) lead designers to adopt smaller subarray sizes to reduce effective RC and enhance subarray-level PPA. However, this approach can result in increased inter-subarray interconnect overhead, potentially offsetting macro-level improvements. This book examines the effects of various subarray sizes on macro-level PPA and finds that larger subarrays can significantly reduce interconnect overhead and improve the energy-delay-area product (EDAP) of SRAM macro. The introduction of the active interconnect (AIC) concept enables the use of larger subarray sizes, while integrating carbon nanotube FET as back-end-of-line compatible devices results in macro-level EDAP improvements of up to 65% when transitioning from standard subarrays to AIC divided subarrays. These findings highlight the future trajectory of SRAM subarray design in deeply scaled nodes.
Advances In Vlsi And Embedded Systems
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Author : Anand D. Darji
language : en
Publisher: Springer Nature
Release Date : 2022-11-30
Advances In Vlsi And Embedded Systems written by Anand D. Darji and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-30 with Technology & Engineering categories.
This book presents select peer-reviewed proceedings of the 2nd International Conference on Advances in VLSI and Embedded Systems (AVES 2021). This book covers cutting-edge original research in VLSI design, devices and emerging technologies, embedded systems, and CAD for VLSI. To address the demand for complex and high-functionality systems as well as portable consumer electronics, the contents focus on advanced topics of circuit and systems design, fabrication, testing, and standardization. This book is useful for students, researchers as well as industry professionals interested in emerging trends in VLSI and embedded systems.
Nanometer Variation Tolerant Sram
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Author : Mohamed Abu Rahma
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-09-27
Nanometer Variation Tolerant Sram written by Mohamed Abu Rahma and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-27 with Technology & Engineering categories.
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.
Cmos Sram Circuit Design And Parametric Test In Nano Scaled Technologies
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Author : Andrei Pavlov
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-06-01
Cmos Sram Circuit Design And Parametric Test In Nano Scaled Technologies written by Andrei Pavlov and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-06-01 with Technology & Engineering categories.
The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.
Advanced Ultra Low Power Semiconductor Devices
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Author : Shubham Tayal
language : en
Publisher: John Wiley & Sons
Release Date : 2023-11-22
Advanced Ultra Low Power Semiconductor Devices written by Shubham Tayal and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-22 with Technology & Engineering categories.
ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors. This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field. Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications. Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book’s scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry’s future.
Nanoelectronics For Next Generation Integrated Circuits
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Author : Rohit Dhiman
language : en
Publisher: CRC Press
Release Date : 2022-11-23
Nanoelectronics For Next Generation Integrated Circuits written by Rohit Dhiman and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-23 with Technology & Engineering categories.
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Vlsi Design And Test
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Author : Anirban Sengupta
language : en
Publisher: Springer
Release Date : 2019-08-17
Vlsi Design And Test written by Anirban Sengupta and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-08-17 with Computers categories.
This book constitutes the refereed proceedings of the 23st International Symposium on VLSI Design and Test, VDAT 2019, held in Indore, India, in July 2019. The 63 full papers were carefully reviewed and selected from 199 submissions. The papers are organized in topical sections named: analog and mixed signal design; computing architecture and security; hardware design and optimization; low power VLSI and memory design; device modelling; and hardware implementation.