Semiconductor Interfaces
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Electronic Properties Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Electronic Properties Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Metal Semiconductor Interfaces
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Author : Akio Hiraki
language : en
Publisher: IOS Press
Release Date : 1995
Metal Semiconductor Interfaces written by Akio Hiraki and has been published by IOS Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Technology & Engineering categories.
Semiconductor Interfaces Microstructures And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 1993-01-01
Semiconductor Interfaces Microstructures And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Science categories.
A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Semiconductor Surfaces And Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09
Semiconductor Surfaces And Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Science categories.
This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces
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Author : Carl Wilmsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces written by Carl Wilmsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Semiconductor Interfaces Formation And Properties
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Author : Guy LeLay
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Interfaces Formation And Properties written by Guy LeLay and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Metallization And Metal Semiconductor Interfaces
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Author : Inder P. Batra
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Metallization And Metal Semiconductor Interfaces written by Inder P. Batra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Semiconductor Interfaces And Microstructures
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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 1992-08-31
Semiconductor Interfaces And Microstructures written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-08-31 with Science categories.
Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields. Contents:Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems (W Walukiewicz)Miniband Conduction in Semiconductor Superlattices (A Sibille et al.)Barrier Width Dependence of Optical Properties in Semiconductor Superlattices (J J Song et al.)Radiative Processes in GaAs/AIGaAs Heterostructures (P O Holtz et al.)Type-I-Type-II Transition in GaAs/AIAs Superlattices (G H Li)Photoluminescene Studies of Interface Roughness in GaAs/AIAs Quantum Well Structures (D Gammon et al.)Optical and Magneto-Optical Properties of Narrow InxGa1-xAs-GaAs Quantum Wells (D C Reynolds & K R Evans)Growth and Studies of Antimony Based III-V Compounds by Magnetron Sputter Epitaxy Using Metalorganic and Solid Elemental Sources (J B Webb & R Rousina)Properties of Cd1-xMnxTe Films and Cd1-xMnxTe-CdTe Superlattices Grown by Pulsed Laser Evaporation and Epitaxy (J M Wrobel & J J Dubowski)Zn1-yCdySe1-xTex Quatenary II-VI Wide Bandgap Alloys and Heterostructures (R E Nahory et al.)Intersubband Transitions in SiGe/Si Quantum Structures (R P G Karunasiri et al.)High-Temperature Discrete Devices in 6H-SiC: Sublimation Epitaxial Growth, Device Technology and Electrical Performance (M M Anikin et al.) Readership: Scientists, engineers and graduate students. keywords:
Control Of Semiconductor Interfaces
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Author : I. Ohdomari
language : en
Publisher: Elsevier
Release Date : 2017-05-03
Control Of Semiconductor Interfaces written by I. Ohdomari and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-03 with Science categories.
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Field Effect In Semiconductor Electrolyte Interfaces
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Author : Pavel P. Konorov
language : en
Publisher: Princeton University Press
Release Date : 2021-01-12
Field Effect In Semiconductor Electrolyte Interfaces written by Pavel P. Konorov and has been published by Princeton University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-12 with Technology & Engineering categories.
This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention. The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method. This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.